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79 条记录 (耗时 0.029 秒)

    METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION
    11.
    发明授权
    METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION 有权
    在有机场效应晶体管中减少接触电阻的方法，通过应用选择性接触区域中有机半导体层区域的反应性中间层

    公开(公告)号：US06806124B2

    公开(公告)日：2004-10-19

    申请号：US10285049

    申请日：2002-10-31

    申请人： Hagen Klauk ,  Günter Schmid ,  Tarik Kriem

    发明人： Hagen Klauk ,  Günter Schmid ,  Tarik Kriem

    IPC分类号： H01L2100

    CPC分类号： H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/308

    摘要： A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.

    摘要翻译： 制造半导体器件并且包含由有机半导体材料制成的第一主体和形成公共接触区域的由导电触点材料制成的第二主体。 首先，在基板上制造主体，该主体可以由接触材料或有机半导体材料构成，并且在其上施加中间层，中间层包含反应性掺杂剂。 之后，在中间层上制造由有机半导体材料或接触材料制成的本体。 包含在中间层中的掺杂剂影响有机半导体材料的区域选择性掺杂，结果是接触材料与有机半导体材料之间的电荷载流子的转变的接触电阻显着降低。

    Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting
    12.
    发明授权
    Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting 失效
    通过嵌入纳米颗粒来产生场增压来降低有机场效应晶体管中的接触电阻的方法和装置

    公开(公告)号：US07067840B2

    公开(公告)日：2006-06-27

    申请号：US10283883

    申请日：2002-10-30

    申请人： Hagen Klauk ,  Günter Schmid

    发明人： Hagen Klauk ,  Günter Schmid

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0545 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/105

    摘要： A method for selectively doping an organic semiconductor 1material in the region of a contact area .1formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.

    摘要翻译： 一种用于在接触区域的区域中有选择地掺杂有机半导体1材料的方法。 1形成在接触件和设置在其上的有机半导体材料之间包括通过纳米颗粒引入掺杂剂，纳米颗粒以与接触面积相邻的方式设置，结果，仅有机半导体材料的非常窄的区域为 掺杂。 由纳米颗粒引起的场增加导致接触电阻的进一步降低。

    Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer
    15.
    发明授权
    Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer 失效
    具有高电荷载流子迁移率的聚噻吩聚合物，制备聚合物的方法，以及包含聚合物的半导体组分和有机场效应晶体管

    公开(公告)号：US06994805B2

    公开(公告)日：2006-02-07

    申请号：US10281807

    申请日：2002-10-28

    申请人： Marcus Halik ,  Günter Schmid

    发明人： Marcus Halik ,  Günter Schmid

    IPC分类号： H01B1/12

    CPC分类号： C08G61/126 ,  H01L51/0036

    摘要： A polythiophene polymer with high charge-carrier mobilities, a method for fabricating the polymer, and a semiconductor component and an organic field effect transistor including the polymer are provided. The polymer has electrical semiconductor characteristics and includes a backbone formed from thiophene groups. The thiophene groups carry a side group in the 3rd and 4th positions that can itself have semiconductor characteristics. The polymers have a high mobility of the charge carriers and are therefore suitable for fabricating electronic components such as field effect transistors.

    摘要翻译： 提供了具有高电荷 - 载流子迁移率的聚噻吩聚合物，制备聚合物的方法，以及包含聚合物的半导体组件和有机场效应晶体管。 聚合物具有电半导体特性并且包括由噻吩基团形成的骨架。 噻吩基团在其本身具有半导体特性的第3和第4位中携带侧基。 聚合物具有电荷载流子的高迁移率，因此适用于制造诸如场效应晶体管的电子部件。

    Semiconductor material for an organic diode
    19.
    发明授权
    Semiconductor material for an organic diode 有权
    有机二极管的半导体材料

    公开(公告)号：US08278652B2

    公开(公告)日：2012-10-02

    申请号：US12665388

    申请日：2008-06-16

    申请人： Ralf Krause ,  Günter Schmid

    发明人： Ralf Krause ,  Günter Schmid

    IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

    CPC分类号： H01L51/002 ,  H01L51/0084 ,  H01L51/0575

    摘要： A semiconductor material and an organic rectifier diode can be used for organic-based RFID (Radio Frequency Identification) tags. The semiconducting material for an organic diode has a metal complex as a p-dopant for doping a hole-conducting organic matrix material, wherein the metal complex is a metal complex with Lewis acid properties, which acts as an electron pair acceptor.

    摘要翻译： 半导体材料和有机整流二极管可用于基于有机的RFID（射频识别）标签。 用于有机二极管的半导体材料具有金属络合物作为用于掺杂空穴传导有机基质材料的p掺杂剂，其中金属络合物是具有路易斯酸性质的金属络合物，其作为电子对受体。