公开(公告)号：US20120003485A1

公开(公告)日：2012-01-05

申请号：US13138563

申请日：2010-03-03

申请人： Dana Berlinde Habich ,  Marcus Halik ,  Oliver Hayden ,  Günter Schmid

发明人： Dana Berlinde Habich ,  Marcus Halik ,  Oliver Hayden ,  Günter Schmid

IPC分类号： H01L51/50 ,  B05D5/12 ,  C23C16/30

CPC分类号： H01L51/5088 ,  H01L51/0021 ,  H01L51/5206 ,  Y10T428/31663

摘要： Monolayers of organic compounds are formed on transparent conductive metal oxide surfaces these are used for example in producing organically based electronic components. By selecting the monolayer, the service life of the devices produced therewith may be improved by orders of magnitude.

摘要翻译： 有机化合物的单层形成在透明导电金属氧化物表面上，这些表面用于例如生产有机基电子元件。 通过选择单层，可以将其生产的装置的使用寿命提高数量级。

公开(公告)号：US07326957B2

公开(公告)日：2008-02-05

申请号：US11134512

申请日：2005-05-23

申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

IPC分类号： H01L29/08

CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

公开(公告)号：US07466230B2

公开(公告)日：2008-12-16

申请号：US10566144

申请日：2004-07-26

申请人： Martin Bergsmann ,  Adolf Bernds ,  Wolfgang Clemens ,  Axel Gerlt ,  Marcus Halik ,  Matthias Müller ,  Henning Rost ,  Günter Schmid ,  Roland Treutlein

发明人： Martin Bergsmann ,  Adolf Bernds ,  Wolfgang Clemens ,  Axel Gerlt ,  Marcus Halik ,  Matthias Müller ,  Henning Rost ,  Günter Schmid ,  Roland Treutlein

IPC分类号： G04C21/16 ,  G04C23/14 ,  G08B23/00 ,  G08B13/14

CPC分类号： A61J7/0481 ,  A61J1/035 ,  A61J7/0436

摘要： A device for the storage of at least one of solid, liquid or gaseous objects. The device including at least one compartment that is configured to contain at least one object. The filling or emptying of the compartment triggers an electrically-readable signal. In one embodiment, the compartment may be mechanically modified and an electrically-readable signal is generated based on a corresponding mechanical change to the compartment. An electrical data memory with at least one memory cell is integrated into the device. The memory cell is assigned to the compartment. The memory cell is configured to adopt a value corresponding to the mechanical change to the compartment. The device also includes an analytical circuit for reading the data memory.

摘要翻译： 用于存储固体，液体或气体物体中的至少一种的装置。 所述设备包括被配置为包含至少一个对象的至少一个隔间。 隔间的灌装​​或排空触发电可读信号。 在一个实施例中，隔室可以被机械地修改，并且基于对隔室的对应的机械改变产生电可读信号。 具有至少一个存储单元的电数据存储器集成到该设备中。 内存单元被分配到隔间。 存储单元被配置为采用对应于隔室的机械变化的值。 该装置还包括用于读取数据存储器的分析电路。

公开(公告)号：US06867442B2

公开(公告)日：2005-03-15

申请号：US10425460

申请日：2003-04-29

申请人： Marcus Halik ,  Günter Schmid ,  Katja Steffen ,  Hagen Klauk

发明人： Marcus Halik ,  Günter Schmid ,  Katja Steffen ,  Hagen Klauk

IPC分类号： H01L29/12 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L23/58

CPC分类号： H01L29/12 ,  H01L51/0004 ,  H01L51/0094

摘要： A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.

摘要翻译： 半导体器件具有将电荷载流子注入到半导体路径中的第一接触和通过其从半导体路径中提取电荷载流子的第二接触。 半导体路径由在其表面上具有烷基或芳基配体的表面改性的半导体颗粒形成。 用配体的改性使得半导体颗粒能够形成稳定的分散体，其可以通过印刷技术容易地施加到基材上。 因此，根据本发明的半导体器件可以非常容易且廉价地制造。

公开(公告)号：US07417247B2

公开(公告)日：2008-08-26

申请号：US11092968

申请日：2005-03-30

申请人： Günter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Reimund Engl ,  Andreas Walter

发明人： Günter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Reimund Engl ,  Andreas Walter

IPC分类号： H01L51/30 ,  C08F8/02

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C08G61/02 ,  G11C13/0016 ,  G11C2213/72 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/005 ,  H01L51/0591

摘要： Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.

摘要翻译： 描述了表现出电阻滞后效应的聚合物。 聚合物包括作为侧基键合五芳基环戊二烯基的聚合物主链。 形成包含作为存储介质的聚合物的电阻式存储元件。 通过施加电压，可以在非导通状态和导通状态之间切换存储​​元件。

公开(公告)号：US07303940B2

公开(公告)日：2007-12-04

申请号：US11066732

申请日：2005-02-25

申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

IPC分类号： H01L51/40 ,  H01L21/4763 ,  H01L51/00 ,  H01L23/58

CPC分类号： H01L51/107 ,  H01L51/0545

摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

公开(公告)号：US07049628B2

公开(公告)日：2006-05-23

申请号：US10395428

申请日：2003-03-24

申请人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

发明人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

IPC分类号： H01L35/24

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0016 ,  H01L27/101 ,  H01L29/78391

摘要： The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.

公开(公告)号：US07115897B2

公开(公告)日：2006-10-03

申请号：US10395455

申请日：2003-03-24

申请人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

发明人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/76

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  H01L21/823807 ,  H01L27/0629 ,  H01L27/28 ,  H01L28/55

摘要： A semiconductor circuit configuration has at least one pair of complementary operating field-effect transistors in which each transistor has a gate region, first and second source/drain regions and also a channel region with or made of an organic semiconductor material that is provided in between. It is furthermore provided that the gate regions are formed such that they are electrically coupled to one another via a capacitor configuration.

公开(公告)号：US07057206B2

公开(公告)日：2006-06-06

申请号：US10974774

申请日：2004-10-28

申请人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

发明人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

IPC分类号： H01L29/08

CPC分类号： H01L51/0036 ,  H01L51/005 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0566

摘要： The invention relates to a semiconductor device having a semiconductor path made from an organic semiconductor material. Semiconductor particles or semiconductor clusters are distributed randomly in the organic semiconductor material. The semiconductor particles and/or semiconductor clusters can also be linked by linker molecules. The addition of semiconductor particles to the organic semiconductor material makes it possible to improve the electrical properties, for example, of a field-effect transistor has a semiconductor path of this nature.

摘要翻译： 本发明涉及具有由有机半导体材料制成的半导体路径的半导体器件。 半导体颗粒或半导体簇随机分布在有机半导体材料中。 半导体颗粒和/或半导体簇也可以通过连接分子连接。 将半导体颗粒添加到有机半导体材料中可以提高电性能，例如场效应晶体管具有这种性质的半导体路径。

公开(公告)号：US06994805B2

公开(公告)日：2006-02-07

申请号：US10281807

申请日：2002-10-28

申请人： Marcus Halik ,  Günter Schmid

发明人： Marcus Halik ,  Günter Schmid

IPC分类号： H01B1/12

CPC分类号： C08G61/126 ,  H01L51/0036

摘要： A polythiophene polymer with high charge-carrier mobilities, a method for fabricating the polymer, and a semiconductor component and an organic field effect transistor including the polymer are provided. The polymer has electrical semiconductor characteristics and includes a backbone formed from thiophene groups. The thiophene groups carry a side group in the 3rd and 4th positions that can itself have semiconductor characteristics. The polymers have a high mobility of the charge carriers and are therefore suitable for fabricating electronic components such as field effect transistors.

摘要翻译： 提供了具有高电荷 - 载流子迁移率的聚噻吩聚合物，制备聚合物的方法，以及包含聚合物的半导体组件和有机场效应晶体管。 聚合物具有电半导体特性并且包括由噻吩基团形成的骨架。 噻吩基团在其本身具有半导体特性的第3和第4位中携带侧基。 聚合物具有电荷载流子的高迁移率，因此适用于制造诸如场效应晶体管的电子部件。