公开(公告)号：US20050023932A1

公开(公告)日：2005-02-03

申请号：US10901382

申请日：2004-07-29

申请人： Kenji Inoue ,  Hisatoshi Saitou

发明人： Kenji Inoue ,  Hisatoshi Saitou

IPC分类号： H01L41/09 ,  H01L41/04 ,  H01L41/187 ,  H03H9/02 ,  H03H9/17

CPC分类号： H03H9/175 ,  H03H9/02102 ,  H03H9/174

摘要： A piezoelectric resonator includes; a lower electrode 24 formed on a substrate 11; a piezoelectric film 23 formed on the lower electrode 24; an upper electrode 25 formed on the piezoelectric film 23 and obtaining, in collaboration with the lower electrode 24, a signal having a predetermined resonance frequency by a propagation of a bulk acoustic wave inside the piezoelectric film 23; and an acoustic multilayer reflective film 28 including an SiO2 film 28a having a predetermined acoustic impedance and an AIN film 28b having an acoustic impedance higher than the SiO2 film 28a, and reflecting the bulk acoustic wave, the SiO2 film 28a and the AIN film 28b being alternately stacked on the upper electrode 25, and the SiO2 film 28a being in contact with the upper electrode 25.

摘要翻译： 压电谐振器包括： 形成在基板11上的下电极24; 形成在下电极24上的压电膜23; 形成在压电膜23上的上电极25，通过压电膜23内的体声波的传播，与下电极24协作获得具有预定谐振频率的信号; 以及包括具有预定声阻抗的SiO 2膜28a和具有高于SiO 2膜28a的声阻抗的AIN膜28b并且反映体声波，SiO 2膜28a和AIN膜28b的声学多层反射膜28为 交替层叠在上电极25上，并且SiO 2膜28a与上电极25接触。

公开(公告)号：US06855996B2

公开(公告)日：2005-02-15

申请号：US10650764

申请日：2003-08-29

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

IPC分类号： C30B29/68 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/365 ,  H01L29/04 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L41/39 ,  H03H3/02 ,  H03H9/17 ,  H01S3/19

CPC分类号： H03H3/02 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/045 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L2224/48091 ,  H03H9/02015 ,  H03H9/02133 ,  H03H9/174 ,  H03H9/176 ,  H01L2924/00014

摘要： An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.

摘要翻译： 一种电子器件基板结构，其包括基板2，作为面心立方结构的（111）取向膜的金属薄膜4或形成在基板2上的作为（0001）取向的六方孔密堆积结构的膜 ，以及形成在金属薄膜4上的纤锌矿晶体结构的（0001）取向膜的纤锌矿型薄膜5，其中：两个薄膜中的每一个是含有至少两种不同晶粒的多晶薄膜 在平面中的晶体取向方向; 当金属薄膜4为（111）取向膜时，纤锌矿型薄膜5的平面中的<11-20>轴在金属薄膜4的平面上平行于<1-10>轴; 并且当金属薄膜4为（0001）取向膜时，纤锌矿型薄膜5的平面内的<11-20>轴在金属薄膜4的平面上平行于<11-20> 。

公开(公告)号：US06709776B2

公开(公告)日：2004-03-23

申请号：US09842805

申请日：2001-04-27

申请人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： B32B900

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

摘要翻译： 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

公开(公告)号：US06198208B1

公开(公告)日：2001-03-06

申请号：US09558586

申请日：2000-04-26

申请人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

发明人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

IPC分类号： H01L4104

CPC分类号： H03H9/176 ,  H01L41/1876 ,  H01L41/316 ,  H03H3/04 ,  H03H9/0211 ,  H03H9/174 ,  Y10T428/3171

摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

摘要翻译： 薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。 实现了具有极宽带的薄膜体声波谐振器。

公开(公告)号：US07220995B2

公开(公告)日：2007-05-22

申请号：US10817907

申请日：2004-04-06

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： H01L27/15

CPC分类号： H03H9/175 ,  B06B1/0644 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/176

摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.

摘要翻译： 电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。 粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。 电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

公开(公告)号：US20050029629A1

公开(公告)日：2005-02-10

申请号：US10817907

申请日：2004-04-06

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： H01L21/28 ,  B06B1/06 ,  H01L21/283 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H01L29/00 ,  H01L21/44 ,  B05D3/06 ,  H01L31/036 ,  H01L21/4763

CPC分类号： H03H9/175 ,  B06B1/0644 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/176

摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.

摘要翻译： 电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。 粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。 电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

公开(公告)号：US06259187B1

公开(公告)日：2001-07-10

申请号：US09472806

申请日：1999-12-28

申请人： Hidenori Abe ,  Hisatoshi Saitou

发明人： Hidenori Abe ,  Hisatoshi Saitou

IPC分类号： H03H925

CPC分类号： H03H9/174 ,  H03H9/177

摘要： An object of the invention is to provide a piezoelectric bulk acoustic wave device having a high effective electromechanical coupling constant and allowing a fractional bandwidth to be broadened when applied to a filter and a normalized frequency variable width to be broadened when applied to an oscillator. Another object of the invention is to provide a miniature piezoelectric bulk acoustic wave device capable of operating at a high frequency of several hundreds of megahertz while maintaining a high electromechanical coupling constant. The piezoelectric bulk acoustic wave device includes a piezoelectric substrate constructed of a single crystal or oriented crystal body of potassium niobate and having a pair of major surfaces, and at least one pair of opposed electrodes formed on the major surfaces of the piezoelectric substrate, respectively, wherein the device utilizes thickness vibration propagating along the major surfaces.

摘要翻译： 本发明的目的是提供一种具有高有效机电耦合常数的压电体声波器件，并且当施加到滤波器时允许分数带宽变宽，并且当应用于振荡器时，可以使归一化的频率可变宽度变宽。 本发明的另一个目的是提供一种能够在保持高机电耦合常数的同时以几百兆赫兹的高频率工作的微型压电体声波器件。 压电体振子装置包括由铌酸钾的单晶或取向晶体构成并具有一对主表面的压电基片和分别形成在压电基板的主表面上的至少一对相对电极， 其中该装置利用沿主表面传播的厚度振动。