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    High frequency plasma generator and high frequency plasma generating method
    11.
    发明授权
    High frequency plasma generator and high frequency plasma generating method 失效
    高频等离子体发生器和高频等离子体发生方法

    公开(公告)号：US07141516B2

    公开(公告)日：2006-11-28

    申请号：US10519553

    申请日：2003-10-01

    申请人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Yoshiaki Takeuchi

    发明人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Yoshiaki Takeuchi

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32155 ,  H01J37/32091

    摘要： An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.

    摘要翻译： 本发明的目的是提供一种高频等离子体发生装置和方法，与现有的装置相比，能够进一步提高基板上膜厚度的均匀性。 在反应室（1）中设置接地电极（3），放电电极（2）与接地电极（3）相对设置。 作为处理对象的基板（4）与接地电极（3）紧密接触。 向放电电极（2）施加高频电压，以在接地电极和放电电极之间产生等离子体。 RF电源（15）产生第一高频电压，并且在放电电极（2）的侧面部分上的馈电点（9）上输出产生的电压。 RF电源（16）产生第二高频电压，并且在放电电极（2）的另一侧面部分上的馈电点（9）上输出产生的电压。 这里，第二高频电压具有与第一高频电压相同的频率，并且具有随着由预定调制信号调制的低频信号而变化的相位。

    Asynchronous pseudo SRAM and access method therefor
    13.
    发明授权
    Asynchronous pseudo SRAM and access method therefor 失效
    异步伪SRAM及其访问方法

    公开(公告)号：US07002871B2

    公开(公告)日：2006-02-21

    申请号：US10762459

    申请日：2004-01-23

    申请人： Yoshiaki Takeuchi ,  Kohei Oikawa

    发明人： Yoshiaki Takeuchi ,  Kohei Oikawa

    IPC分类号： G11C8/00

    CPC分类号： G11C11/22

    摘要： A semiconductor integrated circuit device includes an address buffer which receives an address signal that indicates an address of a memory cell array, a latch circuit which latches the data, and an address transition detection circuit which detects transition of the address. During the access operation of the memory cell array, an address at the operation start time is latched by the latch circuit. After the end of the operation of the memory cell array, an address that is currently input to the address buffer is latched by the latch circuit. If the received address signal is data different from the latch data, a control signal that controls the cycle operation of the memory cell array for a predetermined period is generated on the basis of the detection result from the address transition detection circuit.

    摘要翻译： 半导体集成电路装置包括地址缓冲器，其接收指示存储单元阵列的地址的地址信号，锁存数据的锁存电路以及检测地址的转换的地址转换检测电路。 在存储单元阵列的访问操作期间，操作开始时刻的地址被锁存电路锁存。 在存储单元阵列的操作结束之后，当前输入到地址缓冲器的地址被锁存电路锁存。 如果接收到的地址信号是与锁存数据不同的数据，则根据来自地址转换检测电路的检测结果生成控制存储单元阵列的周期操作达预定周期的控制信号。

    Ferroelectric memory
    16.
    发明授权
    Ferroelectric memory 失效
    铁电存储器

    公开(公告)号：US06906944B2

    公开(公告)日：2005-06-14

    申请号：US10676004

    申请日：2003-10-02

    申请人： Yoshiaki Takeuchi ,  Yukihito Oowaki

    发明人： Yoshiaki Takeuchi ,  Yukihito Oowaki

    IPC分类号： G11C14/00 ,  G11C11/22

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory has a memory cell array of memory cells having ferroelectric capacitors, which is divided into a plurality of blocks, a boost power circuit provided in each block of the memory cell array to generate a boost voltage required for operation of the memory, a boost power switch provided between a power line connected to an external power terminal and a power supply terminal of each boost power circuit, and remaining ON during normal operation of the memory, a voltage detector circuit for detecting a drop of voltage level of the power line, and a switch control circuit for turning off the boost power switches in the blocks of the memory cell array excluding the boost power switch in a currently selected block in response to the voltage detector circuit.

    摘要翻译： 铁电存储器具有具有铁电电容器的存储单元阵列，其被分成多个块，设置在存储单元阵列的每个块中的升压功率电路，以产生存储器的操作所需的升压电压， 升压电源开关，其设置在连接到外部电源端子的电力线与每个升压电力电路的电源端子之间，并且在正常操作期间保持ON;电压检测器电路，用于检测电力线的电压水平的下降 以及开关控制电路，用于响应于电压检测器电路，关闭当前选择的块中除了升压功率开关之外的存储单元阵列的块中的升压功率开关。

    Titanium oxide, photocatalyst comprising same and photocatalytic coating agent
    18.
    发明授权
    Titanium oxide, photocatalyst comprising same and photocatalytic coating agent 失效
    氧化钛，包含它的光催化剂和光催化涂层剂

    公开(公告)号：US06627579B1

    公开(公告)日：2003-09-30

    申请号：US09593001

    申请日：2000-06-13

    申请人： Yoshiaki Sakatani ,  Hironobu Koike ,  Yoshiaki Takeuchi

    发明人： Yoshiaki Sakatani ,  Hironobu Koike ,  Yoshiaki Takeuchi

    IPC分类号： B01J3734

    CPC分类号： B82Y30/00 ,  B01J21/063 ,  B01J35/002 ,  B01J35/004 ,  C01G23/047 ,  C01G23/0532 ,  C01G23/0536 ,  C01P2002/70 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60

    摘要： Titanium oxide exhibiting a superior photocatalytic activity through irradiation of a visible light as well as an ultraviolet light, and a photocatalyst and a photocatalytic coating agent including said titanium oxide, wherein said titanium oxide has a value of an index X1 calculated by the following equation (I) of not more than about 0.90, and a value of an index Y1 calculated by the following equation (II) of not less than 0.075, X1=B1/A1  (I) Y1=D1/C1,  (II) wherein A1 and B1 stand for respective half-widths of peaks, which are obtained by the process consisting of the steps: (i) analyzing titanium oxide eight times according to an X-ray phtoelectron spectroscopy, (ii) obtaining an integrated spectrum of an electron state of titanium with respect to the above first analysis and the second analysis, (iii) obtaining a half-width, A1, of a peak within a binding energy range of from 458 eV to 460 eV with respect to the integrated spectrum obtained in the above step (ii), and (iv) carrying out steps (ii) and (iii) with respect to the above seventh and eighth analyses to obtain a half-width, B1, of a peak, and wherein C1 stands for an integrated value of absorbance within a wavelength range of from 250 nm to 550 nm in measurement of an ultraviolet-visible diffuse reflection spectrum of titanium oxide, and D1 stands for an integrated value of absorbance of titanium oxide within a wavelength range of from 400 nm to 550 nm.

    摘要翻译： 通过照射可见光和紫外光而显示优异的光催化活性的氧化钛，以及包含所述氧化钛的光催化剂和光催化剂，其中所述氧化钛具有通过下式计算的指数X1的值（ I）为不大于约0.90，并且通过以下等式（II）计算的指数Y1的值不小于0.075，其中A1和B1代表峰的相应半峰宽，其通过以下方法获得： 步骤：（i）根据X射线电子能谱分析氧化钛八次，（ii）相对于上述第一次分析和第二次分析获得钛的电子态的积分光谱，（iii）获得 相对于上述步骤（ii）中获得的积分光谱，在458eV至460eV的结合能范围内的峰的半峰宽A1，和（iv）进行步骤（ii）和（iii） ）wi 对于上述第七和第八次分析来获得峰的半峰B1，并且其中C1表示在紫外可见的测量中在250nm至550nm的波长范围内的吸光度的积分值 氧化钛的漫反射光谱，D1表示氧化钛在400nm〜550nm的波长范围内的吸光度的积分值。

    Semiconductor memory device using ferroelectric film
    19.
    发明授权
    Semiconductor memory device using ferroelectric film 有权
    使用铁电薄膜的半导体存储器件

    公开(公告)号：US06366490B1

    公开(公告)日：2002-04-02

    申请号：US09879054

    申请日：2001-06-13

    申请人： Yoshiaki Takeuchi ,  Yukihito Oowaki

    发明人： Yoshiaki Takeuchi ,  Yukihito Oowaki

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： This invention is such that, in a series-connected TC parallel-unit type ferroelectric RAM composed of a series connection of a plurality of unit cells, each unit cell being such that a ferroelectric capacitor is connected between the source and drain of a cell transistor, for instance, plate electrode wires are provided in the longitudinal direction of bit line pairs. The plate electrode wires are shared in memory block groups, each group being a set of a plurality of memory cell blocks connected to the same bit line pair. This causes only the memory cells read from or written into to be accessed by the selected word line and selected plate electrode wire in one select operation.

    摘要翻译： 本发明使得在由多个单元电池的串联连接构成的串联连接的TC并联单元型铁电RAM中，每个单电池使得在单电池晶体管的源极和漏极之间连接有铁电电容器 例如，在位线对的长度方向上设置平板电极线。 板电极线在存储块组中共享，每组是连接到同一位线对的多个存储单元块的集合。 这将导致在一个选择操作中，所选择的字线和选定的板电极线只能读取或写入存储单元。

    Plasma chemical vapor deposition apparatus
    20.
    发明授权
    Plasma chemical vapor deposition apparatus 有权
    等离子体化学气相沉积装置

    公开(公告)号：US06363881B2

    公开(公告)日：2002-04-02

    申请号：US09232600

    申请日：1999-01-19

    申请人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

    发明人： Masayoshi Murata ,  Yoshiaki Takeuchi ,  Hiroshi Mashima ,  Akemi Takano ,  Hirohisa Yoshida

    IPC分类号： C23C16509

    CPC分类号： H01J37/32082 ,  H01J37/32541

    摘要： Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

    摘要翻译： 公开了一种等离子体化学气相沉积设备，用于通过利用由电源供应的电力产生的辉光放电来在目标衬底的表面上形成非晶薄膜，微晶薄膜或多晶薄膜，其包括反应 容器，用于将反应气体供给到反应容器中的装置，用于将反应气体的废气排出反应容器的排出装置，设置在反应容器内的用于排放产生的梯形电极， 用于辉光放电产生的梯形电极的高频功率为30MHz至200MHz，用于加热和支撑目标衬底的加热器，加热器与反应容器内平行于梯形电极放电产生 以及用于均匀地将高频电力分配到梯形电极用于放电发生的功率分配器 h电源线。