公开(公告)号：US20130252559A1

公开(公告)日：2013-09-26

申请号：US13599413

申请日：2012-08-30

申请人： Jun DEGUCHI ,  Shouhei Kousai ,  Yousuke Hagiwara ,  Masamichi Suzuki ,  Atsuhiro Kinoshita ,  Takao Marukame

发明人： Jun DEGUCHI ,  Shouhei Kousai ,  Yousuke Hagiwara ,  Masamichi Suzuki ,  Atsuhiro Kinoshita ,  Takao Marukame

IPC分类号： H03M1/66

CPC分类号： H03M1/66 ,  H03M1/1061 ,  H03M1/745

摘要： In general, according to one embodiment, a DA converter configured to convert a digital signal comprising n (n>1) bits to an analog current to output the analog current from an output terminal, includes n voltage-current converters. Each of them corresponds to each bit of the digital signal and is configured to generate a current depending on the corresponding bit. A k-th (k is an integer of 0 to n−1) voltage-current converter includes a first transistor whose threshold voltage is adjustable. The first transistor includes a semiconductor substrate, a first diffusion region, a second diffusion region, an insulating film, a charge accumulating film, and a gate.

摘要翻译： 通常，根据一个实施例，配置成将包括n（n> 1）位的数字信号转换为模拟电流以从输出端输出模拟电流的DA转换器包括n个电压 - 电流转换器。 它们中的每一个对应于数字信号的每个位，并且被配置为根据相应的位产生电流。 第k（k是0到n-1的整数）电压 - 电流转换器包括阈值电压可调的第一晶体管。 第一晶体管包括半导体衬底，第一扩散区，第二扩散区，绝缘膜，电荷累积膜和栅极。

公开(公告)号：US08450208B2

公开(公告)日：2013-05-28

申请号：US13081629

申请日：2011-04-07

申请人： Yoshifumi Nishi ,  Atsuhiro Kinoshita ,  Hirotaka Nishino ,  Masamichi Suzuki

发明人： Yoshifumi Nishi ,  Atsuhiro Kinoshita ,  Hirotaka Nishino ,  Masamichi Suzuki

IPC分类号： H01L21/283

CPC分类号： H01L21/28518 ,  H01L29/1608 ,  H01L29/41708 ,  H01L29/456 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/6609 ,  H01L29/66272 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66712 ,  H01L29/732 ,  H01L29/7833 ,  H01L29/861

摘要： In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.

摘要翻译： 在根据示例性实施例的半导体器件制造方法中，在n型半导体上沉积含硫的含硫膜，在含硫膜上沉积含有第一金属的第一金属膜，进行热处理 通过使n型半导体和含硫膜反应形成金属半导体化合物膜，并将硫引入到正在形成的n型半导体与金属半导体化合物膜之间的界面上。

公开(公告)号：US07863695B2

公开(公告)日：2011-01-04

申请号：US12200599

申请日：2008-08-28

申请人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

发明人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/785

摘要： A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

摘要翻译： 互补半导体器件包括半导体衬底，形成在半导体衬底的表面上的第一半导体区域，形成在半导体衬底的离开第一半导体区域的表面上的第二半导体区域，具有第一栅极的n-MIS晶体管 形成在第一半导体区域上的包括La和Al的绝缘膜和形成在栅极绝缘膜上的第一栅电极和形成在第二半导体区上的具有包括La和Al的第二栅极绝缘膜的p-MIS晶体管， 以及形成在所述栅极绝缘膜上的第二栅电极，所述第二栅极绝缘膜中的原子密度比Al / La大于所述第一栅极绝缘膜中的原子密度比Al / La。

公开(公告)号：US07662685B2

公开(公告)日：2010-02-16

申请号：US11234217

申请日：2005-09-26

申请人： Masamichi Suzuki ,  Takeshi Yamaguchi

发明人： Masamichi Suzuki ,  Takeshi Yamaguchi

IPC分类号： H01L21/8242

CPC分类号： H01L21/02175 ,  C23C14/08 ,  C23C14/28 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.

摘要翻译： 半导体器件包括Si衬底，形成在Si衬底上的栅极绝缘膜，所述栅极绝缘膜由包含选自Zr，Hf，Ti和镧系元素金属中的至少一种的氧化物膜形成，并且具有 在O1s光电子光谱的第一微分中的拐点的高结合能量侧的单个局部最小值，以及形成在栅极绝缘膜上的栅电极。

公开(公告)号：US07584551B2

公开(公告)日：2009-09-08

申请号：US12219910

申请日：2008-07-30

申请人： Masamichi Suzuki ,  Shuji Hayashida ,  Shozaburo Tsuji

发明人： Masamichi Suzuki ,  Shuji Hayashida ,  Shozaburo Tsuji

IPC分类号： G01B3/10

CPC分类号： G01D5/04 ,  G01D5/2452

摘要： An absolute position measuring apparatus includes a first rotary encoder that detects a rotation of a spindle as a phase signal which varies in a first cycle and a second rotary encoder that detects the rotation of the spindle as another phase signal which varies in a second cycle. A rotation of a first rotor of the first rotary encoder is transmitted to a second rotor via a relay gear that is meshed with a first gear provided on an outer circumference of a first rotary cylinder and a second gear provided on an outer circumference of a second rotary cylinder. Thus, an absolute position of the spindle is calculated on the basis of two phase signals that are different in cycle. Further, it is not necessary to provide a conventionally-known spiral key groove so that the apparatus can be easily downsized. Manufacturing costs can be also reduced.

摘要翻译： 绝对位置测量装置包括：第一旋转编码器，其检测作为在第一周期中变化的相位信号的主轴的旋转;以及检测主轴的旋转的第二旋转编码器，作为在第二周期中变化的另一个相位信号。 第一旋转编码器的第一转子的旋转通过与设置在第一旋转圆筒的外周上的第一齿轮啮合的中继齿轮和设置在第二旋转编码器的外周上的第二齿轮传递到第二转子 旋转圆筒。 因此，基于周期不同的两个相位信号来计算主轴的绝对位置。 此外，不需要提供常规已知的螺旋键槽，使得该装置可以容易地小型化。 制造成本也可以降低。

公开(公告)号：US20080224226A1

公开(公告)日：2008-09-18

申请号：US11858408

申请日：2007-09-20

申请人： Masamichi Suzuki ,  Masato Koyama

发明人： Masamichi Suzuki ,  Masato Koyama

IPC分类号： H01L27/092

CPC分类号： H01L21/823807 ,  H01L21/28079 ,  H01L21/28097 ,  H01L21/28194 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/47 ,  H01L29/4958 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7845

摘要： A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor regions, the n-channel transistor including a first pair of source/drain regions formed on the first semiconductor region, a first gate insulator formed in direct contact with the first semiconductor region and formed as an amorphous insulator containing at least La, and a first gate electrode formed on the first gate insulator, the p-channel MOS transistor including a second pair of source/drain regions formed opposite to each other on the second semiconductor region, a second gate insulator including a silicon oxide film and the amorphous insulating film formed thereon on the second semiconductor region, and a second gate electrode formed on the second gate insulator.

摘要翻译： 半导体器件包括半导体衬底，形成在衬底上以彼此绝缘的p型第一和n型第二半导体区，形成在第一和第二半导体区上的n沟道和p沟道MOS晶体管， 所述n沟道晶体管包括形成在所述第一半导体区域上的第一对源极/漏极区域，与所述第一半导体区域直接接触形成并形成为至少包含La的非晶绝缘体的第一栅极绝缘体和第一栅极电极 形成在所述第一栅极绝缘体上的所述p沟道MOS晶体管，包括在所述第二半导体区域上彼此相对形成的第二对源极/漏极区域，包括氧化硅膜的第二栅极绝缘体和在其上形成的非晶绝缘膜 第二半导体区域和形成在第二栅极绝缘体上的第二栅电极。

公开(公告)号：US07075158B2

公开(公告)日：2006-07-11

申请号：US11244295

申请日：2005-10-06

申请人： Masato Koyama ,  Akira Nishiyama ,  Masamichi Suzuki ,  Yuuichi Kamimuta ,  Tsunehiro Ino

发明人： Masato Koyama ,  Akira Nishiyama ,  Masamichi Suzuki ,  Yuuichi Kamimuta ,  Tsunehiro Ino

IPC分类号： H01L29/76

CPC分类号： H01L21/823814 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

摘要翻译： 可以制造具有低电阻的半导体器件，其器件特性不变化。 半导体器件包括硅层，形成在硅层上的栅极电介质膜，形成在栅极电介质膜上的栅电极，并且包括部分结晶的氮化金属硅化物层，以及形成在 栅电极两侧的硅层。

公开(公告)号：US5689325A

公开(公告)日：1997-11-18

申请号：US634616

申请日：1996-04-19

申请人： Naoki Isogai ,  Masamichi Suzuki

发明人： Naoki Isogai ,  Masamichi Suzuki

IPC分类号： A61B3/107 ,  A61B3/15 ,  A61B3/14 ,  A61B3/00

CPC分类号： A61B3/107 ,  A61B3/152

摘要： A measuring unit is mounted on a movable stage, which is movable in the right-left and front-rear directions relative to a fixed base stage. When an examiner moves the movable stage to the right or to the left by manipulating a joy stick, a micro switch detects that movement. Upon reception of a detection signal from the micro switch, a microcomputer allows power to be supplied to measurement circuits, to initiate a measurement mode. When judging that proper alignment has been established, the microcomputer automatically calculates a cornea shape. Measurement and calculation of a cornea shape are repeated until a standard deviation of measurement data falls within a given value. Upon completion of the measurement operation, the microcomputer stops the supply of power to the measurement circuits, to cancel the measurement mode.

摘要翻译： 测量单元安装在相对于固定基座的左右前后方向上可移动的可动台上。 当检查者通过操纵摇杆将可动台移动到右侧或左侧时，微动开关检测该移动。 微型接收器从微型开关接收到检测信号后，微机允许向测量电路供电，开始测量模式。 当判断为正确的对准是否已建立时，微电脑会自动计算角膜形状。 重复角膜形状的测量和计算，直到测量数据的标准偏差落在给定值内。 在完成测量操作时，微型计算机停止对测量电路的供电，以取消测量模式。

公开(公告)号：US5495677A

公开(公告)日：1996-03-05

申请号：US313833

申请日：1994-09-28

申请人： Masahiko Tachikake ,  Masamichi Suzuki

发明人： Masahiko Tachikake ,  Masamichi Suzuki

IPC分类号： G01B3/18 ,  G01B21/02

CPC分类号： G01B3/18

摘要： A digital display micrometer gauge holds a workpiece to be measured between an anvil and a spindle. An engagement member is provided at an end of the spindle. An inner sleeve having an axial slit into which the engagement member is inserted, is secured to a U-shaped main frame, and an outer sleeve having a spiral groove, which is formed in the inner peripheral section thereof, is provided on the outer periphery of the inner sleeve to be circumferentially rotatable. By rotating this outer sleeve, the spindle can be driven at high speed. A main scale constituting a linear encoder is attached to a side surface of the spindle extending along the axis of the spindle, whereby the displacement amount of the spindle can be detected with high accuracy. A slide member slidable on the inner surface of the inner sleeve is provided at the end of the spindle where the engagement member is provided, and the spindle can be inserted into the inner sleeve together with the main scale attached thereto.

摘要翻译： 数字显示测微计在砧座和主轴之间保持待测量的工件。 在主轴的端部设置有接合构件。 具有插入有接合构件的轴向狭缝的内套筒固定到U形主框架，并且在其外周部分上形成有具有螺旋槽的外套筒 的内套筒可周向旋转。 通过旋转外套筒，可以高速驱动主轴。 构成线性编码器的主标尺附着在主轴的轴心的侧面上，由此可以高精度地检测主轴的位移量。 在内套筒的内表面上可滑动的滑动件设置在主轴的设有接合部件的端部，主轴可以与主附件一起插入到内套筒中。

公开(公告)号：US20130076550A1

公开(公告)日：2013-03-28

申请号：US13536085

申请日：2012-06-28

申请人： Takao MARUKAME ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

发明人： Takao MARUKAME ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

IPC分类号： H03M1/34

CPC分类号： H03M1/1061 ,  H01L27/22 ,  H01L43/08 ,  H03M1/365

摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal.

摘要翻译： 根据实施例，模数转换器包括电压产生单元和多个比较器。 电压产生单元被配置为通过多个可变电阻器分压参考电压以产生多个比较电压。 多个比较器中的每一个被配置为将多个比较电压中的任何一个与模拟输入电压进行比较，并且基于比较电压和模拟输入电压之间的比较结果输出数字信号。 多个可变电阻器中的每一个包括串联连接的多个可变电阻元件，并且多个可变电阻元件中的每一个具有根据外部信号可变地设置的电阻值。