公开(公告)号：US08129283B2

公开(公告)日：2012-03-06

申请号：US12068889

申请日：2008-02-13

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： H01L21/302

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

摘要翻译： 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US07601241B2

公开(公告)日：2009-10-13

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/30 ,  C23C16/38 ,  C23C16/32

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁面积10％的接地导电部件21a 并且具有允许来自等离子体的直流电流流过其中的结构，其中由导电构件21形成的DC接地位于等离子体的浮动电位（或等离子体密度）高于浮动的位置 位于晶片保持电极14附近的等离子体9的电位，其中存在相对较大的壁切屑。

公开(公告)号：US20080190893A1

公开(公告)日：2008-08-14

申请号：US12068889

申请日：2008-02-13

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

摘要翻译： 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US20070209759A1

公开(公告)日：2007-09-13

申请号：US11501814

申请日：2006-08-10

申请人： Go Miya ,  Naoshi Itabashi ,  Seiichiro Kanno ,  Akitaka Makino ,  Hiroshi Akiyama

发明人： Go Miya ,  Naoshi Itabashi ,  Seiichiro Kanno ,  Akitaka Makino ,  Hiroshi Akiyama

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/32137 ,  H01J37/32192 ,  H01J37/3244

摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.

摘要翻译： 为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。 本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

公开(公告)号：US20070175586A1

公开(公告)日：2007-08-02

申请号：US11696280

申请日：2007-04-04

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.

摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

公开(公告)号：US20060032584A1

公开(公告)日：2006-02-16

申请号：US10934510

申请日：2004-09-07

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

IPC分类号： C23F1/00

CPC分类号： H01J37/3299 ,  H01J37/32183 ,  H01J37/32211 ,  H01J37/32935

摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.

摘要翻译： 等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。 高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。 用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。 匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

公开(公告)号：US08546266B2

公开(公告)日：2013-10-01

申请号：US13212909

申请日：2011-08-18

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： H01L21/302

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

公开(公告)号：US20130202479A1

公开(公告)日：2013-08-08

申请号：US13823122

申请日：2010-10-21

申请人： Takumi Tandou ,  Nobuyuki Negishi ,  Naoshi Itabashi

发明人： Takumi Tandou ,  Nobuyuki Negishi ,  Naoshi Itabashi

IPC分类号： A61L2/20

CPC分类号： A61L2/20 ,  A61L2/14 ,  G01N21/67 ,  H05H1/2406 ,  H05H2001/2443 ,  H05H2001/2462 ,  H05H2245/1225

摘要： An apparatus which determines activeness/inactiveness of bacteria in real time by measuring a specific light emission spectrum upon performing sterilization using plasma to highly efficiently sterilize is provided. As solving means, plasma is irradiated on a processing target from a plasma source connected to an alternate-current power supply and light emission of the processing target caused by the irradiation of plasma is detected by a light emission intensity detector unit. Particularly, by detecting wavelength intensity of hydrogen or hydroxyl group, activeness/inactiveness of bacteria can be determined at an early stage. Thus, an appropriate output of a power supply for sterilization can be controlled.

摘要翻译： 提供了一种通过使用等离子体进行灭菌来测量特定发光光谱以实现高效灭菌来确定细菌活性/不活动性的装置。 作为解决方案，等离子体从连接到交流电源的等离子体源照射在处理目标上，并且由发光强度检测器单元检测由等离子体的照射引起的处理目标的发光。 特别地，通过检测氢或羟基的波长强度，可以在早期阶段确定细菌的活性/失活。 因此，可以控制用于灭菌的电源的适当输出。

公开(公告)号：US08282767B2

公开(公告)日：2012-10-09

申请号：US13031839

申请日：2011-02-22

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US20080110569A1

公开(公告)日：2008-05-15

申请号：US11682382

申请日：2007-03-06

申请人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

发明人： Go Miya ,  Junichi Tanaka ,  Seiichiro Kanno ,  Naoshi Itabashi ,  Hiroshi Akiyama ,  Kouhei Satou

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01J37/32972

摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

摘要翻译： 本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。 本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布 衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。