公开(公告)号：US20090165951A1

公开(公告)日：2009-07-02

申请号：US12400266

申请日：2009-03-09

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

IPC分类号： C23F1/08

CPC分类号： H01J37/3299 ,  H01J37/32183 ,  H01J37/32211 ,  H01J37/32935

摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.

摘要翻译： 等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。 高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。 用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。 匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

公开(公告)号：US20060032584A1

公开(公告)日：2006-02-16

申请号：US10934510

申请日：2004-09-07

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

IPC分类号： C23F1/00

CPC分类号： H01J37/3299 ,  H01J37/32183 ,  H01J37/32211 ,  H01J37/32935

摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.

摘要翻译： 等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。 高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。 用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。 匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

公开(公告)号：US07931776B2

公开(公告)日：2011-04-26

申请号：US11512339

申请日：2006-08-30

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01T23/00

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US07908104B2

公开(公告)日：2011-03-15

申请号：US12025095

申请日：2008-02-04

申请人： Tsutomu Tetsuka ,  Naoshi Itabashi ,  Atsushi Itou

发明人： Tsutomu Tetsuka ,  Naoshi Itabashi ,  Atsushi Itou

IPC分类号： G01R23/16

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935

摘要： The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.

摘要翻译： 本发明提供了一种用于检测和管理具有高灵敏度的等离子体处理装置的状态以便能够进行长期稳定处理的方法。 在包括真空处理室10，等离子体产生高频电源16和测量装置单元3的等离子体处理装置中，用于通过从包括a的处理装置反射的入射波53的反射波54估计装置的状态 波形发生器32，VCO33，定向耦合器34，检测器35和测量数据处理单元36，将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中，以便监视 反射波54的吸收光谱频率的变化，从而监视处理装置的状态变化。

公开(公告)号：US20050133162A1

公开(公告)日：2005-06-23

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/3065 ,  C23F4/00 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁的10％的接地导电部件21a 内壁101的区域，具有允许来自等离子体的直流电流流过的结构，其中由导电构件21形成的直流接地位于等离子体（或等离子体密度）的浮动电位高于 位于晶片保持电极14附近的等离子体9的浮动电位，其中存在相对较大的壁切屑。

公开(公告)号：US08926790B2

公开(公告)日：2015-01-06

申请号：US11508187

申请日：2006-08-23

申请人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

发明人： Tsutomu Tetsuka ,  Toshio Masuda ,  Naoshi Itabashi ,  Masanori Kadotani ,  Takashi Fujii

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/505

CPC分类号： H01J37/32082 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32504 ,  H01J37/32559

摘要： The invention provides a plasma processing apparatus aimed at suppressing the corrosion caused by reactive gas and heavy-metal contamination caused by plasma damage of components constituting the high-frequency electrode and gas supply unit. The plasma processing apparatus comprises a processing chamber 1 for subjecting a processing substrate 4 to plasma processing, gas supply means 17, 16 and 11 for feeding gas to the processing chamber 1, and an antenna electrode 10 for supplying high-frequency radiation for discharging the gas to generate plasma, wherein the gas supply means includes a gas shower plate 11 having gas discharge holes on the surface exposed to plasma, and a portion of or a whole surface of the conductor 10 exposed to gas constituting the antenna-electrode side of the gas supply means is subjected to ceramic spraying containing no heavy metal to form a protecting film 12.

摘要翻译： 本发明提供一种等离子体处理装置，旨在抑制由构成高频电极和气体供应单元的部件的等离子体损伤引起的反应性气体和重金属污染引起的腐蚀。 等离子体处理装置包括用于对处理基板4进行等离子体处理的处理室1，用于将气体供给到处理室1的气体供给装置17,16和11以及用于提供高频辐射的天线电极10 气体产生等离子体，其中气体供给装置包括在暴露于等离子体的表面上具有气体排放孔的气体喷淋板11和暴露于构成天线电极侧的气体的导体10的一部分或整个表面 气体供给装置经受不含重金属的陶瓷喷涂以形成保护膜12。

公开(公告)号：US07601241B2

公开(公告)日：2009-10-13

申请号：US10784275

申请日：2004-02-24

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/30 ,  C23C16/38 ,  C23C16/32

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.

摘要翻译： 一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁面积10％的接地导电部件21a 并且具有允许来自等离子体的直流电流流过其中的结构，其中由导电构件21形成的DC接地位于等离子体的浮动电位（或等离子体密度）高于浮动的位置 位于晶片保持电极14附近的等离子体9的电位，其中存在相对较大的壁切屑。

公开(公告)号：US20070175586A1

公开(公告)日：2007-08-02

申请号：US11696280

申请日：2007-04-04

申请人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

发明人： Tsutomu Tetsuka ,  Kazuyuki Ikenaga ,  Tetsuo Ono ,  Motohiko Yoshigai ,  Naoshi Itabashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32477 ,  C23F4/00

摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.

摘要翻译： 一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中， 直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理 位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

公开(公告)号：US08282767B2

公开(公告)日：2012-10-09

申请号：US13031839

申请日：2011-02-22

申请人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US20110139370A1

公开(公告)日：2011-06-16

申请号：US13031839

申请日：2011-02-22

申请人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23F1/08 ,  C23C16/52 ,  C23C16/50 ,  B08B13/00

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。