OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT
    11.
    发明申请
    OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT 有权
    烤箱宽度测量仪器和推出的RAM提供给仪器

    公开(公告)号:US20090103101A1

    公开(公告)日:2009-04-23

    申请号:US12224428

    申请日:2007-02-26

    IPC分类号: G01B11/02

    摘要: An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors 16 and 17 each containing a beam emitting element and a beam receiving element in an outer package, a plurality of plate-like Peltier elements 20a-20d surrounding the outer package and arranged so as to direct their heat absorbing faces toward the outer package, an aluminum inner frame 18 for embedding gaps between the outer package and the heat absorbing faces of the Peltier elements, and cooling fin groups 21a-21d arranged on the heat radiating faces of the Peltier elements; and a housing 13 having an introduction part for introducing cooling air, a discharging part for discharging the cooling air used for cooling, and measurement windows 26 and 28 through which laser beams are passed. The sensor unit SU is accommodated in the housing.

    摘要翻译: 能够在不受测量区域或测量时间的限制的情况下连续地测量烤箱宽度的烤箱宽度测量仪器具有:由激光位移传感器16和17的组合组成的传感器单元SU,每个激光位移传感器16和17均包含射束发射元件和 外包装中的光束接收元件,围绕外包装并且布置成将其吸热面引向外包装的多个板状珀耳帖元件20a-20d,铝内框架18,用于在外包装之间嵌入间隙 和珀耳帖元件的吸热面以及布置在珀耳帖元件的散热面上的散热片组21a〜21d; 以及具有用于引入冷却空气的导入部的壳体13,用于排出用于冷却的冷却空气的排出部,以及通过激光的测量窗26,28。 传感器单元SU容纳在壳体中。

    Low-pressure discharge lamp and back light device using same
    13.
    发明授权
    Low-pressure discharge lamp and back light device using same 失效
    低压放电灯和使用相同的背光灯装置

    公开(公告)号:US07358675B2

    公开(公告)日:2008-04-15

    申请号:US10502892

    申请日:2003-07-17

    CPC分类号: H01J61/72 H01J61/067

    摘要: A low-pressure discharge lamp (1) is provided that includes a glass tube (2) having an inner diameter in a range of 1 to 5 mm and a pair of electrodes (3) disposed at end portions in the glass tube (2). The pair of electrodes (3) contain at least one transition metal selected from transition metals of Groups IV to VI. Mercury and a rare gas containing argon and neon are sealed in an inner portion of the glass tube (2). A relationship between a cathode glow discharge density J and a composition index α of the sealed rare gas of the low-pressure discharge lamp (1) satisfies the following expression α≦J=I/(S·P2)≦1.5α (where S represents an effective discharge surface area (mm2) of an electrode, I represents a RMS lamp current (mA), P represents a pressure (kPa) of a sealed rare gas, and α represents a composition index of a sealed rare gas that is a constant expressed by α=(90.5A+3.4N)×10−3 when a total of a composition ratio A of argon and a composition ratio N of neon is expressed by A+N=1).

    摘要翻译: 提供一种低压放电灯(1),其包括内径为1〜5mm的玻璃管(2)和设置在玻璃管(2)的端部的一对电极(3) 。 该对电极(3)含有至少一种选自IV至VI族过渡金属的过渡金属。 汞和含有氩气和氖气的稀有气体密封在玻璃管(2)的内部。 阴极辉光放电密度J与低压放电灯(1)的密封稀有气体的成分指数α之间的关系满足以下表达式<?in-line-formula description =“In-line formula”end = “lead”?>α<= J = I /(SP 2 )<= 1.5alpha <?in-line-formula description =“In-line Formulas”end =“tail”?> 其中S表示电极的有效放电表面积(mm 2),I表示RMS灯电流(mA),P表示密封稀有气体的压力(kPa),α表示 当氩的组成比A和氖的组成比N的总和为Λ时,由α=(90.5A + 3.4N)×10 -3表示的常数的密封稀有气体的组成指数为 由A + N = 1表示)。

    Solid-state imaging device
    14.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US07355158B2

    公开(公告)日:2008-04-08

    申请号:US11826926

    申请日:2007-07-19

    IPC分类号: H01L21/00 H01L27/00

    摘要: The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

    摘要翻译: 本发明涉及固态成像装置。 根据本发明的固态成像装置包括:第一导电类型的半导体衬底上的多个单元,每个单元包括光电转换单元,该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域,用于将光电转换单元与信号扫描电路单元隔离,沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。

    Cold-cathode fluorescent lamp
    15.
    发明授权
    Cold-cathode fluorescent lamp 有权
    冷阴极荧光灯

    公开(公告)号:US06943499B2

    公开(公告)日:2005-09-13

    申请号:US10817812

    申请日:2004-04-06

    CPC分类号: H01J61/067 H01J61/72

    摘要: The present invention has an object to provide a cold-cathode fluorescent lamp which can suppress sputtering caused by electric discharge and reduce consumption of mercury so as to achieve a longer lifetime even if a lamp current is large and a lighting tube has a small diameter. The cold-cathode fluorescent lamp according to the present invention is characterized in that a distance between the inner surface of the lighting tube and the outer surface of a cylindrical electrode is set such that electric discharge develops mainly on the inner surface of the cylindrical electrode. When the lighting tube has an inside diameter D1 of 1 to 6 mm and the maximum lamp current is 5 mA or more, an outside diameter D2 of the cylinder electrode is preferably set at D1−0.4 [mm]≦D2

    摘要翻译: 本发明的目的是提供一种冷阴极荧光灯,其可以抑制由放电引起的溅射并降低汞的消耗,从而即使灯电流大并且照明管具有小直径也能实现更长的寿命。 根据本发明的冷阴极荧光灯的特征在于,照明管的内表面与圆柱形电极的外表面之间的距离被设定为使得放电主要在圆柱形电极的内表面上产生放电。 当照明管的内径D 1为1〜6mm,最大灯电流为5mA以上时,气缸电极的外径D 2优选设定为D 1 -0.4 [mm] <= D 2

    Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
    17.
    发明授权
    Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same 失效
    具有光电二极管和MOSFET的固态成像装置及其制造方法

    公开(公告)号:US06642087B2

    公开(公告)日:2003-11-04

    申请号:US10339395

    申请日:2003-01-10

    IPC分类号: H01L2100

    摘要: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

    摘要翻译: 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区,在其另一端形成N型信号存储区。 在信号存储区域选择性地外延生长P +型表面屏蔽区域,并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。

    Solid-state image sensor having a substrate with an impurity concentration gradient
    18.
    发明授权
    Solid-state image sensor having a substrate with an impurity concentration gradient 有权
    具有杂质浓度梯度的衬底的固态图像传感器

    公开(公告)号:US06441411B2

    公开(公告)日:2002-08-27

    申请号:US09728123

    申请日:2000-12-04

    IPC分类号: H01L27146

    CPC分类号: H01L27/14643

    摘要: A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

    摘要翻译: 固态图像传感器包括半导体衬底,形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器,其通过绝缘膜在半导体衬底上,用于去除读取的信号的噪声 从所述光电转换部分,其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型,并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域, 第一区域上的杂质低。

    Solid state imaging apparatus, and video system using such solid state imaging apparatus
    19.
    发明授权
    Solid state imaging apparatus, and video system using such solid state imaging apparatus 失效
    固态成像装置和使用这种固态成像装置的视频系统

    公开(公告)号:US06281533B1

    公开(公告)日:2001-08-28

    申请号:US08933306

    申请日:1997-09-18

    IPC分类号: H01L31062

    摘要: This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

    摘要翻译: 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽,从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分,在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后,形成平面化层以覆盖n型层区域,LOCOS区域,栅电极和布线层。

    MOS-type solid-state imaging apparatus
    20.
    发明授权
    MOS-type solid-state imaging apparatus 失效
    MOS型固态成像装置

    公开(公告)号:US6091449A

    公开(公告)日:2000-07-18

    申请号:US21940

    申请日:1998-02-11

    摘要: In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.

    摘要翻译: 在MOS型固体摄像装置中,将多个单位电池配置为二维矩阵,通过垂直地址电路选择一条水平线(行)的单位电池,并将来自该单元的输出的垂直信号线 提供一条垂直线(列)中的单元由水平地址电路选择,从而顺序地输出来自各个单位单元的信号。 每个单位单元包括用于输出从光电二极管到垂直信号线的输出,与输出电路并联连接的光电二极管的输出电路和用于选择一个光电二极管并将其连接到输出电路的选择开关。 输出电路包括用于放大来自光电二极管的输出的放大晶体管,用于选择单元的选择晶体管,以及用于复位光电二极管中的电荷的复位晶体管。