公开(公告)号：US06281533B1

公开(公告)日：2001-08-28

申请号：US08933306

申请日：1997-09-18

申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L31062

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

公开(公告)号：US06674470B1

公开(公告)日：2004-01-06

申请号：US08933975

申请日：1997-09-19

申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

公开(公告)号：US06528342B2

公开(公告)日：2003-03-04

申请号：US09885071

申请日：2001-06-21

申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L2100

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

公开(公告)号：US5506429A

公开(公告)日：1996-04-09

申请号：US208750

申请日：1994-03-11

申请人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

发明人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728 ,  H01L29/765

CPC分类号： H01L27/14831

摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.

摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。 垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。 传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。 多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。 在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。 电荷转移栅电极和缓冲电极通过第一接触孔相互连接。 缓冲电极和并联线通过第二接触孔耦合在一起。 分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

公开(公告)号：US6091449A

公开(公告)日：2000-07-18

申请号：US21940

申请日：1998-02-11

申请人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14 ,  H01L31/062

CPC分类号： H04N5/37457 ,  H01L27/14643 ,  H04N5/3651 ,  H04N5/3741

摘要： In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.

摘要翻译： 在MOS型固体摄像装置中，将多个单位电池配置为二维矩阵，通过垂直地址电路选择一条水平线（行）的单位电池，并将来自该单元的输出的垂直信号线 提供一条垂直线（列）中的单元由水平地址电路选择，从而顺序地输出来自各个单位单元的信号。 每个单位单元包括用于输出从光电二极管到垂直信号线的输出，与输出电路并联连接的光电二极管的输出电路和用于选择一个光电二极管并将其连接到输出电路的选择开关。 输出电路包括用于放大来自光电二极管的输出的放大晶体管，用于选择单元的选择晶体管，以及用于复位光电二极管中的电荷的复位晶体管。

公开(公告)号：US07113213B2

公开(公告)日：2006-09-26

申请号：US09927632

申请日：2001-08-13

申请人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

发明人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/2173 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/378

摘要： An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data. The sensor includes a photoelectric conversion element placed at the predetermined position, an output circuit having an amplification MOS transistor connected to the photoelectric conversion element and serving to amplify and output an output from the photoelectric conversion element at a first timing and output noise independent of the output from the photoelectric conversion element at a second timing, and a noise reduction circuit, connected to the output of the output circuit, having the same impedance at the first and second timings when viewed from the output circuit, and obtaining the difference between outputs from the output circuits at the first and second timings. By setting the same impedance, proper noise cancellation can be performed.

摘要翻译： 图像系统使用放大型MOS传感器，用于通过光电转换元件接收光学图像，将图像转换为电信号，并输出信号。 该系统包括用于将该光学图像引导到预定位置的光学系统，具有用于将由光学系统引导到预定位置的光学图像光电转换为以像素为单位的电信号的传感器的图像处理装置，以及信号 处理装置，用于处理来自图像处理装置的输出，并输出结果数据。 传感器包括放置在预定位置的光电转换元件，输出电路，其具有连接到光电转换元件的放大MOS晶体管，用于在第一定时放大并输出来自光电转换元件的输出，并且输出独立于 在第二定时从光电转换元件输出的噪声降低电路和连接到输出电路的输出的噪声降低电路，在从输出电路观察时在第一和第二定时具有相同的阻抗，并且获得来自 输出电路在第一和第二定时。 通过设置相同的阻抗，可以执行适当的噪声消除。

公开(公告)号：US5463232A

公开(公告)日：1995-10-31

申请号：US43632

申请日：1993-04-08

申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L29/10 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/359 ,  H04N5/361 ,  H04N5/367 ,  H04N5/369 ,  H04N5/3728 ,  H01L29/68 ,  H01L31/00

CPC分类号： H01L29/1062 ,  H01L27/14831

摘要： A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.

摘要翻译： 固态成像装置包括光敏电池阵列，每个光敏单元包括光电转换部分，该光电转换部分布置在基板的表面上并具有光接收开口。 光电转换部分响应于通过该开口的入射光量而产生电载体的分组。 在基板表面上与光电转换部相邻配置电荷转移部。 该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域，并且使由此获得的载体依次移动。 遮光部被配置为将除了开口部之外的光电转换部覆盖，以防止通过开口的入射光作为泄漏部件被引入到传送通道区域，通过切断泄漏部件的内部反射路径 到此。

公开(公告)号：US5504526A

公开(公告)日：1996-04-02

申请号：US155833

申请日：1993-11-23

申请人： Ryohei Miyagawa ,  Shinji Ohsawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Yoshiyuki Matsunaga

发明人： Ryohei Miyagawa ,  Shinji Ohsawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Yoshiyuki Matsunaga

IPC分类号： H01L27/148 ,  H04N1/028 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376

CPC分类号： H04N5/3728 ,  H01L27/14831 ,  H04N5/3597

摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.

摘要翻译： 固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组 。 电荷转移部分与图像元素阵列耦合。 转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。 复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。 提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位 同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

公开(公告)号：US5428231A

公开(公告)日：1995-06-27

申请号：US269349

申请日：1994-06-30

申请人： Nagataka Tanaka ,  Yoshiyuki Matsunaga ,  Michio Sasaki ,  Hirofumi Yamashita ,  Nobuo Nakamura

发明人： Nagataka Tanaka ,  Yoshiyuki Matsunaga ,  Michio Sasaki ,  Hirofumi Yamashita ,  Nobuo Nakamura

IPC分类号： H01L21/28 ,  H01L27/148 ,  H01L29/423 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/42396 ,  H01L27/14831

摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.

摘要翻译： 固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。 水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。 垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。 水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。 水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。

公开(公告)号：US08542304B2

公开(公告)日：2013-09-24

申请号：US13052145

申请日：2011-03-21

申请人： Motohiro Maeda ,  Hirofumi Yamashita ,  Nagataka Tanaka

发明人： Motohiro Maeda ,  Hirofumi Yamashita ,  Nagataka Tanaka

IPC分类号： H04N9/083 ,  H04N3/14 ,  H04N5/335 ,  H04N9/04

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H04N9/045

摘要： According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.

摘要翻译： 根据一个实施例，固态成像装置包括第一和第二像素部分，第一和第二转移晶体管，第一和第二累积部分，元件隔离区域，第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间，分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。