公开(公告)号：US20090004833A1

公开(公告)日：2009-01-01

申请号：US12146802

申请日：2008-06-26

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US20060046441A1

公开(公告)日：2006-03-02

申请号：US11211745

申请日：2005-08-26

申请人： Kiyotaka Miyano ,  Akihito Yamamoto ,  Yoshihiko Saito

发明人： Kiyotaka Miyano ,  Akihito Yamamoto ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L29/7834 ,  C30B25/16 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66628

摘要： According to the present invention, there is provided a selectivity monitoring method in a selective film growth method of selectively growing a film in a predetermined region on a semiconductor substrate, comprising: selectively growing the film on a surface of the semiconductor substrate while measuring temperature of the surface of the semiconductor substrate by at least one pyrometer placed in a non-contact state above the surface of the semiconductor substrate; and determining that selectivity of the growth of the film has decreased, when the temperature changes from a predetermined value or changes from a predetermined angle in a graph showing change of the temperature during film formation.

摘要翻译： 根据本发明，提供了选择性膜生长方法中选择性地生长半导体衬底上预定区域中的膜的选择性监测方法，包括：在半导体衬底的表面上选择性地生长膜，同时测量温度 所述半导体衬底的表面通过在所述半导体衬底的表面上方处于非接触状态的至少一个高温计; 并且当温度从预定值变化或者在显示成膜期间温度变化的曲线图中从预定角度改变时，确定膜生长的选择性已经降低。

公开(公告)号：US07510769B2

公开(公告)日：2009-03-31

申请号：US11074702

申请日：2005-03-09

申请人： Takakazu Hase ,  Yoshihiko Saito ,  Koichi Takahashi ,  Yasushi Kojima ,  Kenichi Shinya ,  Keishi Hamada

发明人： Takakazu Hase ,  Yoshihiko Saito ,  Koichi Takahashi ,  Yasushi Kojima ,  Kenichi Shinya ,  Keishi Hamada

IPC分类号： B32B27/30 ,  B32B27/40

CPC分类号： C09D133/14 ,  C08J7/042 ,  C08J2433/14 ,  Y10T428/31551 ,  Y10T428/31554 ,  Y10T428/31573 ,  Y10T428/31855 ,  Y10T428/31909

摘要： A laminate film has a clear layer (B) comprising an acrylic-based polymer (B1) having at least one longer unsaturated double bond group and at least one shorter unsaturated double bond group as side chains, and having a weight-average molecular weight not less than 50,000 but not more than 500,000, the longer unsaturated double bond group introduced in the acrylic-based polymer (B1) by a long-chain unsaturated carboxylic acid having a molecular weight of 150 or more, and the shorter unsaturated double bond group introduced in the acrylic-based polymer (B1) by a short-chain unsaturated carboxylic acid having a molecular weight of less than 150. Compared with laminate films prepared by spray coating, dip coating, or other coating methods, this laminate film is excellent in processability, coating film properties, and ornamental properties. Thus, an article can be excellently decorated with the laminate film provided by the present invention.

摘要翻译： 层压膜具有透明层（B），其包含具有至少一个较长不饱和双键基团和至少一个较短不饱和双键基团作为侧链的丙烯酸类聚合物（B1），并且具有重均分子量 小于50,000但不超过500,000，通过分子量为150以上的长链不饱和羧酸引入丙烯酸类聚合物（B1）中较长的不饱和双键基团，并引入较短的不饱和双键基团 在丙烯酸​​类聚合物（B1）中，通过分子量小于150的短链不饱和羧酸。与通过喷涂，浸涂或其它涂布方法制备的层压膜相比，该层压膜具有优异的加工性 ，涂膜性质和装饰性。 因此，用本发明提供的层压膜可以很好地装饰物品。

公开(公告)号：US07067870B2

公开(公告)日：2006-06-27

申请号：US10770014

申请日：2004-02-03

申请人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

发明人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

公开(公告)号：US07531871B2

公开(公告)日：2009-05-12

申请号：US11293301

申请日：2005-12-05

申请人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

发明人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

IPC分类号： H01L29/94

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

公开(公告)号：US4956392A

公开(公告)日：1990-09-11

申请号：US437314

申请日：1989-11-17

申请人： Yoshihiko Saito ,  Osamu Hashimoto ,  Masaaki Kuwa ,  Takashi Kojima ,  Kinya Tsuji

发明人： Yoshihiko Saito ,  Osamu Hashimoto ,  Masaaki Kuwa ,  Takashi Kojima ,  Kinya Tsuji

IPC分类号： C07C29/153 ,  B01J23/80 ,  C07B61/00 ,  C07C27/00 ,  C07C27/06 ,  C07C29/15 ,  C07C29/154 ,  C07C31/02 ,  C07C67/00

CPC分类号： C07C29/154 ,  C12C11/02 ,  Y02P20/52

摘要： A process for producing methanol or mixed alcohol which comprises reacting a synthesis gas containing hydrogen and carbon monoxide and/or carbon dioxide in a fluidized catalyst bed.Catalyst particles having an average particle diameter of not more than 150 microns and a particle density of at least 1.7 g/cm.sup.3 are used as the fluidized catalyst.The catalyst particles are contacted with the synthesis gas at a superficial linear velocity of at least 0.2 m/sec. under a pressure of 40 to 200 atmospheres.

摘要翻译： 一种生产甲醇或混合醇的方法，其包括在流化催化剂床中使含氢和一氧化碳和/或二氧化碳的合成气反应。 作为流化催化剂，使用平均粒径为150μm以下，粒子密度为1.7g / cm 3以上的催化剂粒子。 催化剂颗粒以至少0.2m / sec的表观线速度与合成气体接触。 在40至200个大气压的压力下。

公开(公告)号：US08282727B2

公开(公告)日：2012-10-09

申请号：US11830462

申请日：2007-07-30

申请人： Takeshi Ogawa ,  Takanori Hashimoto ,  Emi Nomi ,  Yutaro Kawasaki ,  Yoshihiko Saito

发明人： Takeshi Ogawa ,  Takanori Hashimoto ,  Emi Nomi ,  Yutaro Kawasaki ,  Yoshihiko Saito

IPC分类号： B05D7/14

CPC分类号： C09D5/002 ,  C08F255/02 ,  C08L23/025 ,  C08L51/06 ,  C08L63/00 ,  C08L75/04 ,  C09D133/06 ,  C08L2666/02 ,  C08L2666/04 ,  C08L2666/14

摘要： A water-borne primer coating composition including a water-borne non-chlorinated polyolefin resin (A), a water-borne polyurethane resin (B), a water-borne epoxy resin (C) and an internally crosslinked acrylic particle emulsion (D), wherein the content of resin (A) is 15 to 60%, the content of resin (B) is 10 to 50%, the content of resin (C) is 20 to 50%, and the content of emulsion (D) is 5 to 20%, all by weight on the solid equivalent basis in 100% by weight of the total amount of resin (A), resin (B), resin (C) and emulsion (D), and resin (A) is a polypropylene resin having crystallinity of 35 to 55% and a weight average molecular weight of 50000 to 200000. The composition can achieve an adhesion property to a substrate, gasohol resistance, inhibition of peeling of a multilayer coating film in washing by high pressure cleaning and moisture resistance.

摘要翻译： 包含水性非氯化聚烯烃树脂（A），水性聚氨酯树脂（B），水性环氧树脂（C）和内部交联的丙烯酸类颗粒乳液（D）的水性底漆涂料组合物， ，其中树脂（A）的含量为15〜60％，树脂（B）的含量为10〜50％，树脂（C）的含量为20〜50％，乳液（D）的含量为 5重量％至20重量％，以树脂（A），树脂（B），树脂（C）和乳液（D）的总量为100重量％的固体当量计，树脂（A）为 结晶度为35〜55％，重均分子量为50000〜200000的聚丙烯树脂。该组合物可以实现对基材的粘合性，耐醇油性，通过高压清洗和湿气抑制洗涤中多层涂膜的剥离 抵抗性。

公开(公告)号：US20070243701A1

公开(公告)日：2007-10-18

申请号：US11783035

申请日：2007-04-05

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Takaharu Itani ,  Yoshihiko Saito

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Takaharu Itani ,  Yoshihiko Saito

IPC分类号： H01L21/425

CPC分类号： H01L21/2686 ,  H01L21/324 ,  H01L29/7833 ,  H01L29/7842

摘要： An impurity is ion-implanted into the major surface of an Si substrate having a bulk microdefect density of 5×106 to 5×107 cm−3, a bulk microdefect size smaller than 100 nm, and a dissolved oxygen concentration of 1.1×1018 to 1.2×1018 cm−3. The Si substrate then undergoes ultra-rapid thermal annealing whose heating/cooling rate is higher than 1×105° C./sec, thereby electrically activating the impurity to form at least a partial impurity diffusion layer of a semiconductor element.

摘要翻译： 将杂质离子注入到具有体积微密度为5×10 -6至5×10 -7 cm -3以下的Si衬底的主表面中， 体积微观尺寸小于100nm，溶解氧浓度为1.1×10 18至1.2×10 -8 cm -3。 然后，Si衬底经历其加热/冷却速率高于1×10 5℃/秒的超快速热退火，从而电激活杂质以形成半导体的至少部分杂质扩散层 元件。

公开(公告)号：US07224022B2

公开(公告)日：2007-05-29

申请号：US10804018

申请日：2004-03-19

申请人： Keinichi Tokano ,  Yoshihiko Saito ,  Shigeo Kouzuki ,  Yasunori Usui ,  Masaru Izumisawa ,  Takahiro Kawano

发明人： Keinichi Tokano ,  Yoshihiko Saito ,  Shigeo Kouzuki ,  Yasunori Usui ,  Masaru Izumisawa ,  Takahiro Kawano

IPC分类号： H01L29/00

CPC分类号： H01L29/7811 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66712 ,  H01L29/7802

摘要： As and B are implanted to side surfaces of trenches 3 by a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n−-type epitaxial Si layer is interposed between trenches 3 is converted into a semiconductor structure consisting of n-type pillar layer 5/p-type pillar layer 4/n-type pillar layer 5 lining up. The structure can function substantially the same role as that of a super junction structure.

摘要翻译： 通过旋转离子注入法将As和B注入到沟槽3的侧表面，通过使用扩散系数中的这些杂质之间的差异，其中n + O - 型外延Si层的结构为 插入在沟槽3之间的半导体结构被转换为由n型支柱层5 / p型支柱层4 / n型支柱层5组成的半导体结构。 该结构可以起到与超级结结构基本上相同的作用。

公开(公告)号：US20060145230A1

公开(公告)日：2006-07-06

申请号：US11293301

申请日：2005-12-05

申请人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

发明人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

IPC分类号： H01L29/94

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.