摘要:
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要:
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
摘要:
A sputtering target comprises an oxide containing niobium, a silicide containing niobium and silicon oxide substantially for the rest. The sputtering target is formed e.g. by reactive sintering a powdery niobium or a powdery niobium alloy containing silicon oxide in the range of 15 to 70 mol % by mole ratio. A film resistor formed by using the sputtering target exhibits high specific resistance, good stabilities of resistance and a film composition and excellent reproducibility and is used as a heat generating resistor in e.g. a thermal printer head.
摘要:
A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.
摘要:
A manufacturing method for manufacturing a rotating electrical machine equipped with a stator that includes a continuously wound coil unit achieved by continuously winding concentrated winding-type coils via cross wires, with coil wire having a rectangular section. The manufacturing method includes: mounting core segments, at which the coil wire is yet to be wound, at a core segment forward/backward moving mechanism; winding the coil wire with a winding track secured by driving the core segments forward/backward via the core segment forward/backward moving mechanism; setting faces of the coil wire in alignment by holding orientations of winding start wire and winding end wire at the concentrated winding-type coils at approximately 90° via open/close type chucks each equipped with a chuck forward/backward moving mechanism, with the open/close type chucks mounted at the core segment forward/backward moving mechanism; and forming the continuously wound coil unit by driving the core segments forward/backward via the core segment forward/backward moving mechanism, driving the open/close type chucks forward/backward and opening/closing the open/close type chucks.
摘要:
A rotating electrical machine includes a rotor, in which a plurality of magnetic poles are provided in circumferential direction, and a stator, within which the rotor is disposed. In the stator, two stator magnetic poles are formed by winding coils of one phase and by a stator core of the stator within 360° of electrical angle defined by the magnetic poles of the rotor. The coils that form respective stator magnetic poles have angular widths in circumferential direction of less than 180° of electrical angle, the coils that form the respective two stator magnetic poles are provided so as not to mutually overlap and are wound so that adjacent ones of the stator magnetic poles have mutually opposite polarities, and, in the stator, each winding of each coil consists of an external bridge wire, a turn portion, an internal bridge wire, and a turn portion, in that order.
摘要:
A rotating electrical machine includes: a stator that has a stator core and a stator coil; and a rotor disposed rotatably on an inner circumferential side of the stator core. The stator core includes a plurality of slots opening on the inner circumferential side and the slots are each formed as an open slot with a width of an inner circumferential-side opening thereof ranging along a circumferential direction set substantially equal to or greater than a width of a bottom side measured along the circumferential direction. The stator further includes a slot insulator disposed between inner wall of each of the slots at the stator core and the stator coil and a holding member constituted with a nonmagnetic material and inserted in each of the slots at the stator core so as to hold the slot insulator between two side surfaces present along the circumferential direction at the slot. The stator is formed by winding the stator coil through the plurality of slots.
摘要:
A sputtering target consists of high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.
摘要:
Provided are: a method of manufacturing semiconductor device which has multilayer interconnection in a damascene structure and a conductive barrier film such as CoWP film, and which has more excellent electric characteristics than a conventional one. To this end, when a via hole reaching a lower wiring is formed, a reaction layer formed between a conductive barrier film and the lower wiring and remaining on the surface of the lower wiring is removed. Thus, at an interface where a lower surface of the via and the lower wiring are joined, the reaction layer, formed between the conductive barrier film and the lower wiring, does not exist, so that the via resistance can be sufficiently reduced.
摘要:
Each pair of coils mutually connected in a stator winding is arranged in a fashion that a first coil of each pair of coils has an inner-circumferential-side coil terminal (212) led out from an inner-circumferential-side slot position in the direction of a coil end (220) of the stator winding, and that a second coil of each pair of coils has an outer-circumferential-side coil terminal (211) led out from an outer-circumferential-side slot position in the direction of the coil end (220) of the stator winding for connection to the inner-circumferential-side coil terminal (212), wherein there is provided a coil terminal connection structure in which the inner-circumferential-side coil terminal (212) is connected to the outer-circumferential-side coil terminal (211) across the coil end (220), and joint parts (211a, 212a) thereof are bent close to the coil end (220).