公开(公告)号：US20200243493A1

公开(公告)日：2020-07-30

申请号：US16840794

申请日：2020-04-06

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20180226387A1

公开(公告)日：2018-08-09

申请号：US15941611

申请日：2018-03-30

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L25/10 ,  H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L21/82 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20170040303A1

公开(公告)日：2017-02-09

申请号：US15334069

申请日：2016-10-25

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L25/10 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract translation: 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。

公开(公告)号：US08906743B2

公开(公告)日：2014-12-09

申请号：US13739331

申请日：2013-01-11

Applicant: Micron Technology, Inc.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L21/48 ,  H01L21/82 ,  H01L23/495 ,  H01L21/56

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract translation: 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。

公开(公告)号：US20140197526A1

公开(公告)日：2014-07-17

申请号：US13739331

申请日：2013-01-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Chan Yoo ,  Todd O. Bolken

IPC: H01L21/82 ,  H01L23/495 ,  H01L21/56

CPC classification number: H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract translation: 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。