Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

    公开(公告)号:US11211537B2

    公开(公告)日:2021-12-28

    申请号:US16862897

    申请日:2020-04-30

    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

    VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING
    13.
    发明申请
    VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING 有权
    带镍硅胶的垂直发光装置及其制造方法

    公开(公告)号:US20140346553A1

    公开(公告)日:2014-11-27

    申请号:US14456730

    申请日:2014-08-11

    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

    Abstract translation: 这里描述了发光器件,组件和制造方法的各种实施例。 在一个实施例中,制造发光器件的方法包括形成发光结构,并且在发光结构上串联沉积阻挡材料,反射镜材料和接合材料。 接合材料含有镍(Ni)。 该方法还包括将发光结构放置在硅衬底上,其中接合材料与硅衬底接触并退火发光结构和硅衬底。 结果,在硅衬底和接合材料之间的界面处形成硅化镍(NiSi)材料,以将发光结构机械耦合到硅衬底。

    Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

    公开(公告)号:US12170348B2

    公开(公告)日:2024-12-17

    申请号:US17562348

    申请日:2021-12-27

    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

    VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING

    公开(公告)号:US20220123190A1

    公开(公告)日:2022-04-21

    申请号:US17562348

    申请日:2021-12-27

    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

    VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING
    19.
    发明申请
    VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING 有权
    带镍硅胶的垂直发光装置及其制造方法

    公开(公告)号:US20160372649A1

    公开(公告)日:2016-12-22

    申请号:US15254483

    申请日:2016-09-01

    Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

    Abstract translation: 这里描述了发光器件,组件和制造方法的各种实施例。 在一个实施例中,制造发光器件的方法包括形成发光结构,并且在发光结构上串联沉积阻挡材料,反射镜材料和接合材料。 接合材料含有镍(Ni)。 该方法还包括将发光结构放置在硅衬底上,其中接合材料与硅衬底接触并退火发光结构和硅衬底。 结果,在硅衬底和接合材料之间的界面处形成硅化镍(NiSi)材料,以将发光结构机械耦合到硅衬底。

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