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    Performing forming processes on resistive memory
    12.
    发明授权
    Performing forming processes on resistive memory 有权
    在电阻式存储器上执行形成过程

    公开(公告)号：US09001561B2

    公开(公告)日：2015-04-07

    申请号：US14250106

    申请日：2014-04-10

    Applicant: Micron Technology, Inc.

    Inventor： Xiaonan Chen

    IPC: G11C11/00 ,  G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/0092 ,  Y10T29/49002

    Abstract: The present disclosure includes apparatuses and methods for performing forming processes on resistive memory. A number of embodiments include applying a formation signal to the storage element of a resistive memory cell, wherein the formation signal includes a first portion having a first polarity and a first amplitude, a second portion having a second polarity and a second amplitude, wherein the second polarity is opposite the first polarity and the second amplitude is smaller than the first amplitude, and a third portion having the first polarity and a third amplitude that is smaller than the first amplitude.

    Abstract translation: 本公开包括用于在电阻性存储器上执行形成处理的装置和方法。 许多实施例包括将形成信号施加到电阻式存储单元的存储元件，其中形成信号包括具有第一极性和第一幅度的第一部分，具有第二极性和第二幅度的第二部分，其中， 第二极性与第一极性相反，第二振幅小于第一振幅，第三极部分具有第一极性，第三振幅小于第一振幅。

    Memory Programming Methods and Memory Systems
    13.
    发明申请
    Memory Programming Methods and Memory Systems 审中-公开

    公开(公告)号：US20190279713A1

    公开(公告)日：2019-09-12

    申请号：US16422690

    申请日：2019-05-24

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  Durai Vishak Nirmal Ramaswamy

    IPC: G11C13/00 ,  G11C29/50 ,  G11C29/08

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Memory Programming Methods And Memory Systems
    17.
    发明申请
    Memory Programming Methods And Memory Systems 有权
    内存编程方法和内存系统

    公开(公告)号：US20140112052A1

    公开(公告)日：2014-04-24

    申请号：US13658519

    申请日：2012-10-23

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  D.V. Nirmal Ramaswamy

    IPC: G11C11/00 ,  G11C7/00

    CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C29/08 ,  G11C29/50008 ,  G11C2013/0073 ,  G11C2029/0409 ,  G11C2029/5006

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。

    Memory programming methods and memory systems
    18.
    发明授权
    Memory programming methods and memory systems 有权

    公开(公告)号：US10304531B2

    公开(公告)日：2019-05-28

    申请号：US15690744

    申请日：2017-08-30

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  Durai Vishak Nirmal Ramaswamy

    IPC: G11C11/00 ,  G11C13/00 ,  G11C29/08 ,  G11C29/50 ,  G11C29/04

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Memory programming methods and memory systems
    19.
    发明授权
    Memory programming methods and memory systems 有权
    内存编程方法和内存系统

    公开(公告)号：US09230685B2

    公开(公告)日：2016-01-05

    申请号：US13658519

    申请日：2012-10-23

    Applicant: Micron Technology, Inc.

    Inventor： Jonathan Strand ,  Adam Johnson ,  Xiaonan Chen ,  D. V. Nirmal Ramaswamy

    IPC: G11C11/00 ,  G11C29/08 ,  G11C29/50 ,  G11C13/00 ,  G11C29/04

    CPC classification number: G11C13/0069 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C29/08 ,  G11C29/50008 ,  G11C2013/0073 ,  G11C2029/0409 ,  G11C2029/5006

    Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

    Abstract translation: 描述了存储器编程方法和存储器系统。 一个示例性存储器编程方法包括：首先将第一信号施加到存储器单元以尝试将存储器单元编程到期望状态，其中第一信号对应于期望状态，在第一次施加之后，确定存储器单元不能放置 在所需状态下，在确定之后，向存储单元施加第二信号，其中第二信号对应于与期望状态不同的另一状态，并且在第二次施加之后，第三信号施加到存储单元 将存储器单元编程到所需状态，其中第三信号对应于期望状态。 描述附加的方法和装置。

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