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    Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing
    13.
    发明授权
    Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing 有权
    在半极面上生长的固态照明装置和相关的制造方法

    公开(公告)号：US08865495B2

    公开(公告)日：2014-10-21

    申请号：US13897922

    申请日：2013-05-20

    Applicant: Micron Technology, Inc.

    Inventor： Lifang Xu ,  Zaiyuan Ren

    IPC: H01L21/205 ,  H01L33/18 ,  H01L33/32 ,  H01L33/16 ,  H01L33/24 ,  H01L33/20

    CPC classification number: H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24

    Abstract: Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.

    Abstract translation: 本文公开了在半极面上生长的固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（“GaN”）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（ “InGaN”）/ GaN多量子阱（“MQW”）有源区直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN / GaN MQW和P型GaN材料中的至少一种生长为半极性侧壁。

    Light emitting diodes with n-polarity and associated methods of manufacturing
    15.
    发明授权
    Light emitting diodes with n-polarity and associated methods of manufacturing 有权

    公开(公告)号：US11049994B2

    公开(公告)日：2021-06-29

    申请号：US15631836

    申请日：2017-06-23

    Applicant: Micron Technology, Inc.

    Inventor： Zaiyuan Ren ,  Thomas Gehrke

    IPC: H01L33/00 ,  H01L33/16 ,  H01L33/32

    Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

    LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
    19.
    发明申请
    LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING 有权
    发光二极管及相关制造方法

    公开(公告)号：US20150028347A1

    公开(公告)日：2015-01-29

    申请号：US14510914

    申请日：2014-10-09

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

    IPC: H01L33/24 ,  H01L33/22 ,  H01L33/16 ,  H01L33/32

    CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

    Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

    Abstract translation: 本文公开了发光二极管和相关的制造方法。 在一个实施例中，发光二极管（LED）包括衬底，由衬底承载的半导体材料和靠近半导体材料的有源区。 半导体材料具有靠近基板的第一表面和与第一表面相对的第二表面。 半导体材料的第二表面通常是非平面的，并且有源区域通常符合半导体材料的非平面第二表面。

    SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING
    20.
    发明申请
    SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING 有权
    无转换器材料和相关制造方法的固态照明装置

    公开(公告)号：US20130342133A1

    公开(公告)日：2013-12-26

    申请号：US14010944

    申请日：2013-08-27

    Applicant: Micron Technology, Inc.

    Inventor： Zaiyuan Ren ,  Thomas Gehrke

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  C30B25/00 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

    Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

    Abstract translation: 本文公开了可以产生没有荧光体的白光的固态照明装置。 在一个实施例中，固态照明装置包括第一半导体材料，与第一半导体材料间隔开的第二半导体材料以及第一和第二半导体材料之间的有源区。 有源区包括具有第一中心波长的第一子区和具有不同于第一中心波长的第二中心波长的第二子区。

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