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公开(公告)号：US09159476B2
公开(公告)日：2015-10-13
申请号：US13982672
申请日：2011-02-01
摘要： Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
摘要翻译： 提供与负差分电阻（NDR）相关的装置和方法。 NDR装置包括间隔开的一对电极和设置在其间的至少两种不同的材料。 两种材料之一的特征在于负热膨胀，而另一种材料的特征在于正的热膨胀。 这两种材料的特征还有不同的电阻率。 NDR器件的特征在于包括负差分电阻范围的非线性电阻曲线。 NDR器件根据跨越该对电极的施加电压沿曲线工作。
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公开(公告)号：US20130242637A1
公开(公告)日：2013-09-19
申请号：US13424034
申请日：2012-03-19
申请人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149
摘要： A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
摘要翻译： 电子器件可以具有由多个材料隔开的第一和第二电极。 第一材料可以具有在第一材料上停止电刺激之后第一材料表现出的存储特性，其维持电控物理性质的大小。 第二种材料可能具有辅助特性。
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公开(公告)号：US20120026776A1
公开(公告)日：2012-02-02
申请号：US12847874
申请日：2010-07-30
CPC分类号： H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/55 , G11C2213/56 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括设置在一对电极之间的至少两种不同的活性材料。 选择活性材料以响应于氧离子含量的变化表现出相应且相反的电阻变化。 活性物质在施加电场的影响下进行氧离子重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。
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公开(公告)号：US09082533B2
公开(公告)日：2015-07-14
申请号：US14345293
申请日：2011-10-21
IPC分类号： H05K1/16 , H05K7/00 , H01L47/00 , H01L29/06 , H01C10/00 , H01L45/00 , H01L27/24 , H01C10/16 , H05K1/18 , G11C13/00
CPC分类号： H01C10/00 , G11C13/003 , G11C2213/15 , G11C2213/55 , G11C2213/56 , G11C2213/71 , H01C10/16 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H05K1/18
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.
摘要翻译： 提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区。 有源区包括第一金属氧化物的开关层和第二金属氧化物的导电层，其中第一金属氧化物上的金属与第二金属氧化物的金属离子不同。 忆阻元件基于第一金属氧化物和第二金属氧化物之间的氧化物异质结，在低电阻状态下呈现非线性电流 - 电压特性。 还提供了包括忆阻元件的多层结构。
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公开(公告)号：US08921960B2
公开(公告)日：2014-12-30
申请号：US13560935
申请日：2012-07-27
IPC分类号： H01L29/86
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1293 , H01L45/1675
摘要： A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
摘要翻译： 忆阻器阵列包括下层交叉梁，与下部交叉梁交叉的上层交叉杆，夹在相交的横梁之间的忆阻单元以及分隔相邻的忆阻单元的孔。 还提供了一种形成忆阻器阵列的方法。
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公开(公告)号：US08872153B2
公开(公告)日：2014-10-28
申请号：US13822227
申请日：2010-09-27
CPC分类号： H01L45/14 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1608
摘要： A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
摘要翻译： 忆阻器包括由第一金属形成的第一电极，由第二材料形成的第二电极，其中第二材料包括与第一金属不同的材料，以及位于第一电极和第二电极之间的开关层。 开关层由包括第一金属和第二非金属材料的第一材料的组合物形成，其中开关层与第一电极直接接触，并且其中至少一个导电沟道被构造成形成在第一金属 开关层从第一金属和第二非金属材料之间的相互作用。
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公开(公告)号：US08767438B2
公开(公告)日：2014-07-01
申请号：US13424034
申请日：2012-03-19
申请人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149
摘要： A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
摘要翻译： 电子器件可以具有由多个材料隔开的第一和第二电极。 第一材料可以具有在第一材料上停止电刺激之后第一材料表现出的存储特性，其维持电控物理性质的大小。 第二种材料可能具有辅助特性。
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公开(公告)号：US08385101B2
公开(公告)日：2013-02-26
申请号：US12847874
申请日：2010-07-30
IPC分类号： G11C11/00
CPC分类号： H01L45/08 , G11C13/0002 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/55 , G11C2213/56 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括设置在一对电极之间的至少两种不同的活性材料。 选择活性材料以响应于氧离子含量的变化表现出相应且相反的电阻变化。 活性物质在施加电场的影响下进行氧离子重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。
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公开(公告)号：US08324976B2
公开(公告)日：2012-12-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D Pickett , Gilberto Medeiros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。
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公开(公告)号：US20120085985A1
公开(公告)日：2012-04-12
申请号：US12899210
申请日：2010-10-06
CPC分类号： H01L29/8615 , B82Y10/00 , H01L27/10 , H01L29/2003 , H01L29/247 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147
摘要： An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established on the active region. A conductive nano-channel is formed through a thickness of the insulating material layer.
摘要翻译： 电驱动装置包括反应性金属层，与反应性金属层接触建立的第一电极，与第一电极或反应性金属层接触建立的绝缘材料层，建立在绝缘材料层上的有源区，以及 在有源区上建立的第二电极。 通过绝缘材料层的厚度形成导电纳米通道。
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