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11.发明授权Reflective mask blank, method of manufacturing a reflective mask blank and method of manufacturing a reflective mask 有权反光掩模板，反射掩模坯料的制造方法和反射掩模的制造方法公开(公告)号：US08329361B2
公开(公告)日：2012-12-11
申请号：US12761019
申请日：2010-04-15
申请人： Morio Hosoya
发明人： Morio Hosoya
IPC分类号： G03F1/24
摘要： Provided are a reflective mask blank and a reflective mask that can improve the contrast for EUV exposure light in use of the mask and further can improve the pattern resolution at a pattern edge portion of the mask, thereby enabling high-resolution pattern transfer. A reflective mask blank of this invention has a substrate and, further, a multilayer reflective film adapted to reflect the EUV exposure light and an absorber film adapted to absorb the EUV exposure light, which are formed in this order over the substrate. The absorber film is made of a material containing Ta and has a film density of 6.0 to 16.0 g/cm3. A reflective mask is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.
摘要翻译： 本发明提供一种能够改善使用掩模中的EUV曝光光的对比度的反射掩模坯料和反射掩模，并进一步提高掩模图案边缘部分的图案分辨率，从而实现高分辨率图案转印。 本发明的反射掩模板具有基板，并且还具有适于反射EUV曝光光的多层反射膜和适于吸收在基板上依次形成的EUV曝光光的吸收膜。 吸收膜由含有Ta的材料制成，膜密度为6.0〜16.0g / cm 3。 通过在反射掩模坯料的吸收膜中形成转印图案来获得反射掩模。
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12.发明授权Reflective mask blank and method of producing the same, and method of producing a reflective mask 有权反光掩模板及其制造方法以及反射掩模的制造方法公开(公告)号：US08021807B2
公开(公告)日：2011-09-20
申请号：US12573703
申请日：2009-10-05
申请人： Morio Hosoya
发明人： Morio Hosoya
IPC分类号： G03F1/00
摘要： A reflective mask blank has a substrate, a multilayer reflective film formed on the substrate to reflect exposure light, a protective film formed on the multilayer reflective film, and an absorber film formed on the protective film to absorb the exposure light. The protective film is made of an Ru compound containing Ru and X (X being at least one kind of material selected from Nb and Zr). The protective film has an oxidized surface layer containing X as a main component. A reflective mask is obtained by forming a transfer pattern by patterning the absorber film of the reflective mask blank.
摘要翻译： 反射掩模板具有基板，形成在基板上以反射曝光光的多层反射膜，形成在多层反射膜上的保护膜，以及形成在保护膜上以吸收曝光光的吸收膜。 保护膜由含有Ru和X的Ru化合物（X是选自Nb和Zr中的至少一种材料）制成。 保护膜具有含有X作为主要成分的氧化表面层。 通过对反射掩模板的吸收膜进行图案化而形成转印图案来获得反射掩模。
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13.发明授权Reflective mask blank, reflective mask and methods of producing the mask blank and the mask 有权反光面罩坯料，反光罩和生产面罩坯料和面膜的方法公开(公告)号：US07981573B2
公开(公告)日：2011-07-19
申请号：US12116550
申请日：2008-05-07
IPC分类号： G03F1/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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14.发明申请Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask 审中-公开溅射靶，多层反射膜涂布基板的制造方法，反射掩模坯料的制造方法以及反射掩模的制造方法公开(公告)号：US20060237303A1
公开(公告)日：2006-10-26
申请号：US11392769
申请日：2006-03-30
申请人： Morio Hosoya , Osamu Nozawa
发明人： Morio Hosoya , Osamu Nozawa
CPC分类号： G03F7/70958 , B82Y10/00 , B82Y40/00 , C23C14/14 , C23C14/3414 , G02B5/0891 , G03F1/24 , G03F7/70983 , G21K2201/067 , H01J37/3414 , H01J37/3426
摘要： A sputtering target is substantially made of ruthenium (Ru), has a sintered density of 95% or more, and contains oxygen (O) and carbon (C) each in an amount of 200 ppm or less.
摘要翻译： 溅射靶基本上由钌（Ru）制成，烧结密度为95％以上，并且含有氧（O）和碳（C）各自为200ppm以下。
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15.发明申请Reflection type mask blank and reflection type mask and production methods for them 有权反射型面罩坯料和反光型面膜及其制作方法公开(公告)号：US20050208389A1
公开(公告)日：2005-09-22
申请号：US10510916
申请日：2003-04-11
IPC分类号： G03F1/52 , G03F1/00 , G03F1/50 , H01L21/027 , G03F9/00
摘要： A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.
摘要翻译： 反射掩模板具有基板（11），在基板（11）上依次形成反射层（12），反射层（12）用于反射在包括极紫外区域的短波长区域中的曝光和用于吸收曝光光的吸收层（16）。 吸收层（16）具有至少两层结构，其包括作为下层的曝光用光吸收层（14），该曝光用光吸收层由包含极紫外区域的短波长区域中的曝光用光的吸收体形成， 层叠由用于检查掩模图案的检查光的吸收体形成的低反射率层（15）。 上层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至30原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。 或者，反射掩模坯料具有依次形成有多层反射膜和吸收体层的基板。 在这种情况下，吸收层由含有钽（Ta），硼（B）和氮（N）的材料制成。 B的含量为5原子％至25原子％。 Ta和N（Ta：N）的比例落在8:1-2:7的范围内。
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16.发明申请Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask 失效反射型掩模毛坯的制造方法和反射型掩模的制造方法公开(公告)号：US20050100797A1
公开(公告)日：2005-05-12
申请号：US10644964
申请日：2003-08-21
申请人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
发明人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
CPC分类号： B82Y10/00 , B82Y40/00 , C03C17/3482 , G03F1/24
摘要： A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
摘要翻译： 通过在基板上形成反射曝光的多层反射膜和在多层反射膜上形成吸收曝光光的吸收体层来形成反射型掩模坯料的方法包括在基板和多层反射膜之间形成步骤， 与多层反射膜的膜应力相反的应力校正膜，绝对值比多层反射膜的膜应力小，应力校正膜的热处理步骤，以及对多层反射膜进行热处理的工序 反射膜。
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公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
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公开(公告)号：US08389184B2
公开(公告)日：2013-03-05
申请号：US13122024
申请日：2010-01-29
申请人： Morio Hosoya
发明人： Morio Hosoya
IPC分类号： G03F1/24
摘要： Disclosed is a reflective mask blank (10) which comprises a substrate (1), a multilayer reflective film (2) for reflecting exposure light, a buffer film (3), and an absorber film (4) for absorbing exposure light, said films being sequentially formed on the substrate. The absorber film (4) has a multilayer structure which is composed of an uppermost layer (4b) and a lower layer (4a). The uppermost layer is formed from a material containing oxide, oxynitride or carbide of Ta, and has a refractive index (n) of 0.95-0.97 and an extinction coefficient (k) of from −0.033 to −0.023. The lower layer is formed from a material containing Ta, and has a refractive index (n) of 0.94-0.97 and an extinction coefficient (k) of from −0.050 to −0.036. A reflective mask (20) can be obtained by forming a transfer pattern on the absorber film of the reflective mask blank.
摘要翻译： 公开了一种反射掩模板（10），其包括基板（1），用于反射曝光光的多层反射膜（2），缓冲膜（3）和用于吸收曝光光的吸收膜（4），所述膜 顺序形成在基板上。 吸收膜（4）具有由最上层（4b）和下层（4a）构成的多层结构体。 最上层由含有氧化物，氧氮化物或Ta的碳化物的材料形成，折射率（n）为0.95〜0.97，消光系数（k）为-0.033〜-0.23。 下层由含Ta的材料形成，折射率（n）为0.94-0.97，消光系数（k）为-0.050〜-0.036。 可以通过在反射掩模板的吸收膜上形成转印图案来获得反射掩模（20）。
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公开(公告)号：US20110217633A1
公开(公告)日：2011-09-08
申请号：US13122099
申请日：2009-12-24
申请人： Morio Hosoya
发明人： Morio Hosoya
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/0092 , G03F1/22 , G03F7/2002
摘要： Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr. A reflective mask 20 is obtained by forming a transfer pattern in the absorber film of the reflective mask blank.
摘要翻译： 提供了能够提高检查中具有200nm以下的波长的检查光的对比度的反射性掩模坯料和反射性掩模，能够改善使用掩模时的曝光光的对比度，并能够形成 高分辨率精细图案。 反射掩模板10包括基板1和适于反射曝光的多层反射膜2，主要由钌（Ru）或其化合物组成的保护膜6在多层反射膜2上，以及吸收膜4， 吸收在基板上依次形成的曝光光。 吸收膜4具有包括最上层4b和下层4a的叠层结构。 最上层4b由主要由选自Si和Cr中的至少一种元素的氮化物，氧化物，氮氧化物，碳化物，碳氮化物或碳氮氧化物组成的材料形成。 通过在反射掩模板的吸收膜中形成转印图案来获得反射掩模20。
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20.发明授权Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask 失效反射型掩模毛坯的制造方法和反射型掩模的制造方法公开(公告)号：US07056627B2
公开(公告)日：2006-06-06
申请号：US10644964
申请日：2003-08-21
申请人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
发明人： Tsutomu Shoki , Morio Hosoya , Takeru Kinoshita
IPC分类号： G01F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , C03C17/3482 , G03F1/24
摘要： A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
摘要翻译： 通过在基板上形成反射曝光的多层反射膜和在多层反射膜上形成吸收曝光光的吸收体层来形成反射型掩模坯料的方法包括在基板和多层反射膜之间形成步骤， 与多层反射膜的膜应力相反的应力校正膜，绝对值比多层反射膜的膜应力小，应力校正膜的热处理步骤，以及对多层反射膜进行热处理的工序 反射膜。
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