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公开(公告)号：US20160134241A1
公开(公告)日：2016-05-12
申请号：US14862865
申请日：2015-09-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
Abstract translation: 功率放大器在高输出功率下提高了功率附加效率。 功率放大器包括：第一晶体管，用于放大输入到其基极的输入信号并从其集电极输出放大的信号; 第二晶体管，其具有施加到其集电极的电源电压，以将偏置电压或偏置电流从其发射极提供给第一晶体管的基极; 第三晶体管，其集电极连接到第一晶体管的集电极，以放大输入到其基极的输入信号，并从其集电极输出放大的信号; 第四晶体管，其基极和集电极连接以从其发射极向第三晶体管的基极提供偏置; 以及具有施加到其一端的偏置控制电压并且另一端连接到第二和第四晶体管的基极的第一电阻器。
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公开(公告)号：US09166542B2
公开(公告)日：2015-10-20
申请号：US14366744
申请日：2012-12-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Norio Hayashi , Satoshi Shimizu , Ryo Kadoi , Akio Yamamoto
IPC: H03F3/04 , H03F3/45 , H03F1/56 , H03F3/195 , H03F3/24 , H03F3/50 , H04B1/04 , H01Q1/50 , H03F3/193 , H03H7/40
CPC classification number: H03F3/45071 , H01Q1/50 , H03F1/56 , H03F3/193 , H03F3/195 , H03F3/245 , H03F3/45 , H03F3/45183 , H03F3/50 , H03F2200/108 , H03F2200/111 , H03F2200/222 , H03F2200/387 , H03F2203/45454 , H03F2203/45466 , H03F2203/45476 , H03F2203/45576 , H03F2203/45631 , H03F2203/45634 , H03F2203/45674 , H03H7/40 , H04B1/0458
Abstract: When the frequency bandwidth of a high frequency signal to be amplified is changed, the linearity of a high frequency module deteriorates. A high frequency module has an amplifier circuit including an amplification transistor and a variable impedance circuit, and an output matching network. Based on an amplifying operation, the amplified high frequency signal will contain unwanted signals of secondary distortion components. In a frequency band that generates such unwanted signals of secondary distortion components, the output impedance of the amplifier circuit is changed so that the impedance will not match between the amplifier circuit and the output matching network. The output impedance of the amplifier circuit is changed by controlling the variable impedance circuit.
Abstract translation: 当要放大的高频信号的频率带宽改变时，高频模块的线性度恶化。 高频模块具有包括放大晶体管和可变阻抗电路的放大器电路和输出匹配网络。 基于放大操作，放大的高频信号将包含二次失真分量的不需要的信号。 在产生二次失真分量的不需要的信号的频带中，改变放大器电路的输出阻抗，使得放大器电路和输出匹配网络之间的阻抗不匹配。 通过控制可变阻抗电路来改变放大器电路的输出阻抗。
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Patent Agency Ranking
公开(公告)号：US20140354360A1
公开(公告)日：2014-12-04
申请号：US14366744
申请日：2012-12-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Norio Hayashi , Satoshi Shimizu , Ryo Kadoi , Akio Yamamoto
CPC classification number: H03F3/45071 , H01Q1/50 , H03F1/56 , H03F3/193 , H03F3/195 , H03F3/245 , H03F3/45 , H03F3/45183 , H03F3/50 , H03F2200/108 , H03F2200/111 , H03F2200/222 , H03F2200/387 , H03F2203/45454 , H03F2203/45466 , H03F2203/45476 , H03F2203/45576 , H03F2203/45631 , H03F2203/45634 , H03F2203/45674 , H03H7/40 , H04B1/0458
Abstract: When the frequency bandwidth of a high frequency signal to be amplified is changed, the linearity of a high frequency module deteriorates. A high frequency module has an amplifier circuit including an amplification transistor and a variable impedance circuit, and an output matching network. Based on an amplifying operation, the amplified high frequency signal will contain unwanted signals of secondary distortion components. In a frequency band that generates such unwanted signals of secondary distortion components, the output impedance of the amplifier circuit is changed so that the impedance will not match between the amplifier circuit and the output matching network. The output impedance of the amplifier circuit is changed by controlling the variable impedance circuit.
Abstract translation: 当要放大的高频信号的频率带宽改变时，高频模块的线性度恶化。 高频模块具有包括放大晶体管和可变阻抗电路的放大器电路和输出匹配网络。 基于放大操作，放大的高频信号将包含二次失真分量的不需要的信号。 在产生二次失真分量的不需要的信号的频带中，改变放大器电路的输出阻抗，使得放大器电路和输出匹配网络之间的阻抗不匹配。 通过控制可变阻抗电路来改变放大器电路的输出阻抗。
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公开(公告)号：US10693418B2
公开(公告)日：2020-06-23
申请号：US15585418
申请日：2017-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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公开(公告)号：US09768729B2
公开(公告)日：2017-09-19
申请号：US14862865
申请日：2015-09-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC classification number: H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
Abstract: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US20170237400A1
公开(公告)日：2017-08-17
申请号：US15585418
申请日：2017-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazuo Watanabe , Satoshi Tanaka , Norio Hayashi , Kazuma Sugiura
Abstract: The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.
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17.发明授权Semiconductor integrated circuit apparatus and radio-frequency power amplifier module 有权半导体集成电路设备和射频功率放大器模块公开(公告)号：US08810285B2
公开(公告)日：2014-08-19
申请号：US14026076
申请日：2013-09-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yusuke Shimamune , Yasunobu Yoshizaki , Norio Hayashi , Takayuki Tsutsui
IPC: H03F3/45 , H04B1/04 , H03F3/16 , H03G3/30 , H03F3/195 , H03F3/68 , H04W52/52 , H03F3/24 , H03F3/72 , H03F3/21
CPC classification number: H04W52/52 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2203/7209 , H03G3/3042
Abstract: In a semiconductor integrated circuit apparatus and a radio-frequency power amplifier module, a log detection portion including multiple-stage amplifier circuits, multiple level detection circuits, adder circuits, and a linear detection portion including a level detection circuit are provided. Output current from the log detection portion and output current from the linear detection portion are multiplied by different coefficients and the results of the multiplication are added to each other to realize the multiple detection methods. For example, current resulting from multiplication of the output current from the log detection portion by ×6/5 is added to the output current from the linear detection portion to realize a log detection method and, current resulting from multiplication of the output current from the log detection portion by ×⅕ is added to current resulting from multiplication of the output current from the linear detection portion by ×3 to realize a log-linear detection method.
Abstract translation: 在半导体集成电路装置和射频功率放大器模块中，提供包括多级放大器电路，多电平检测电路，加法器电路和包括电平检测电路的线性检测部分的对数检测部分。 来自对数检测部分的输出电流和来自线性检测部分的输出电流乘以不同的系数，并且相乘的结果相加以实现多种检测方法。 例如，将从日志检测部分的输出电流乘以×6/5产生的电流被加到来自线性检测部分的输出电流中，以实现对数检测方法，并且由与来自 将来自线性检测部分的输出电流乘以×3所产生的电流加上×的对数检测部分，以实现对数线性检测方法。
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