公开(公告)号：US20190198464A1

公开(公告)日：2019-06-27

申请号：US16223597

申请日：2018-12-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Isao OBU

IPC: H01L23/66 ,  H01L27/06 ,  H01L23/528 ,  H01L23/00 ,  H01L49/02 ,  H01L29/737

CPC classification number: H01L23/66 ,  H01L23/5286 ,  H01L24/13 ,  H01L27/0658 ,  H01L28/10 ,  H01L28/40 ,  H01L29/7371 ,  H01L2223/6655 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2924/30111 ,  H03F1/565 ,  H03F3/195 ,  H03F3/2178 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03H7/38

Abstract: A plurality of unit transistors that are connected in parallel to each other are formed on a substrate. In addition, a ground bump is provided on the substrate. A plurality of first capacitors are each provided for a corresponding one of the plurality of unit transistors and each connect an output electrode of the corresponding one of the plurality of unit transistors and the ground bump to each other.

公开(公告)号：US20190172773A1

公开(公告)日：2019-06-06

申请号：US16210135

申请日：2018-12-05

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Atsushi KUROKAWA ,  Masayuki AOIKE ,  Takayuki TSUTSUI

IPC: H01L23/49 ,  H01L23/532 ,  H01L23/29 ,  H01L23/14

Abstract: A wiring is disposed above operating regions of plural unit transistors arranged on a substrate in a first direction. An insulating film is disposed on the wiring. A cavity entirely overlapping with the wiring as viewed from above is formed in the insulating film. A metal member electrically connected to the wiring via the cavity is disposed on the insulating film. The centroid of the cavity is displaced from that of the operating region of the corresponding unit transistor in the first direction. When the cavity having a centroid the closest to the operating region of a unit transistor is defined as the closest proximity cavity, the amount of deviation of the centroid of the closest proximity cavity from that of the operating region of the corresponding unit transistor in the first direction becomes greater from the center to the ends of the arrangement direction of the unit transistors.

公开(公告)号：US20190158044A1

公开(公告)日：2019-05-23

申请号：US16192890

申请日：2018-11-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Satoshi TANAKA ,  Takayuki TSUTSUI ,  Yasunari UMEMOTO

IPC: H03F3/21 ,  H03F3/19 ,  H03F1/56 ,  H03F1/02 ,  H01L27/06

Abstract: A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

公开(公告)号：US20250055427A1

公开(公告)日：2025-02-13

申请号：US18932829

申请日：2024-10-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Shinnosuke TAKAHASHI

IPC: H03F3/213 ,  H03F1/30

Abstract: A radio frequency amplification circuit includes an amplification transistor, a first transistor, and a Schottky barrier diode. The amplification transistor has a base to which a radio frequency signal is supplied and a collector from which the radio frequency signal amplified is outputted, and is made of a compound semiconductor. The first transistor has a base to which a first bias is supplied, and an emitter electrically coupled to the base of the amplification transistor and configured to supply a second bias to the base of the amplification transistor, and is made of the compound semiconductor. The Schottky barrier diode has an anode electrically coupled to the base of the first transistor and a cathode electrically coupled to the emitter of the first transistor.

公开(公告)号：US20240313724A1

公开(公告)日：2024-09-19

申请号：US18671143

申请日：2024-05-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masao KONDO ,  Takayuki TSUTSUI ,  Satoshi GOTO

IPC: H03F3/45 ,  H01P5/12

CPC classification number: H03F3/45475 ,  H01P5/12 ,  H03F2200/06

Abstract: A first differential amplifier circuit is in or on a substrate and includes a pair of differential input nodes to which differential signals are input and a pair of differential output nodes from which differential signals are output. Ends of a secondary coil of a first transformer are connected to the pair of differential input nodes of the first differential amplifier circuit, and an intermediate point of the secondary coil is AC grounded. Ends of a primary coil of a second transformer are connected to the pair of differential output nodes of the first differential amplifier circuit, and an intermediate point of the primary coil of the second transformer is AC grounded. A differential wire pair connects the ends of the secondary coil of the first transformer to the pair of differential input nodes of the first differential amplifier circuit.

公开(公告)号：US20240194770A1

公开(公告)日：2024-06-13

申请号：US18583693

申请日：2024-02-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Masao KONDO ,  Shaojun MA

IPC: H01L29/73 ,  H01L27/06 ,  H01L29/205 ,  H01L29/737 ,  H01L29/778 ,  H03F3/21

CPC classification number: H01L29/7304 ,  H01L27/0623 ,  H01L29/205 ,  H01L29/7371 ,  H01L29/7786 ,  H03F3/211 ,  H03F2200/451

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a ballast resistance layer. The collector layer is made of an n-type compound semiconductor material. The base layer is disposed on the collector layer and is made of a p-type compound semiconductor material. The emitter layer is disposed on the base layer and is made of an n-type compound semiconductor material having a band gap larger than a band gap of the base layer. The ballast resistance layer is disposed on the emitter layer and is made of an intrinsic or p-type compound semiconductor material.

公开(公告)号：US20220200542A1

公开(公告)日：2022-06-23

申请号：US17550640

申请日：2021-12-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Masao KONDO

IPC: H03F1/52 ,  H03F3/195 ,  H03F3/24

Abstract: A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.

公开(公告)号：US20220060158A1

公开(公告)日：2022-02-24

申请号：US17453962

申请日：2021-11-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Yasunari UMEMOTO ,  Yuichi SAITO ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/21 ,  H01F17/00 ,  H01L23/00 ,  H01L23/552 ,  H03F3/213 ,  H03F1/02 ,  H01L23/66 ,  H01L23/498

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US20210305951A1

公开(公告)日：2021-09-30

申请号：US17215208

申请日：2021-03-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Satoshi TANAKA

IPC: H03F3/24 ,  H03F1/52

Abstract: A power amplifier circuit includes a first amplifier that amplifies a first RF signal and outputs a second RF signal, a second amplifier that amplifies the second RF signal and outputs a third RF signal, a bias circuit that supplies a bias current or voltage to the first or second amplifier, and a bias adjustment circuit that adjusts the bias current or voltage on the basis of the first RF signal, the second RF signal, or the third RF signal. The bias adjustment circuit includes a first diode having an anode to which a control signal indicating a signal based on the first, second, or third RF signal is inputted, and a cathode connected to a ground. The bias circuit includes a bias transistor that outputs the bias current or voltage on the basis of a voltage at the anode of the first diode.

公开(公告)号：US20210242843A1

公开(公告)日：2021-08-05

申请号：US17238835

申请日：2021-04-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Masao KONDO ,  Satoshi TANAKA

IPC: H03F3/24 ,  H03F3/21 ,  H03F3/19 ,  H03F3/193 ,  H03F3/04 ,  H03F1/30

Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal; a second transistor that amplifies the second signal and outputs a third signal; a bias circuit that supplies a bias current to a base of the second transistor; and a bias adjustment circuit that adjusts the bias current by subjecting the first signal to detection. The bias adjustment circuit controls the bias current such that a first current extracted from the bias circuit depends on a magnitude of the first signal.