PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    15.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光伏器件及其制造方法

    公开(公告)号:US20100024871A1

    公开(公告)日:2010-02-04

    申请号:US12399441

    申请日:2009-03-06

    IPC分类号: H01L31/00 H01L21/302

    摘要: A method of manufacturing a photovoltaic device includes preparing a semiconductor substrate having a light incidence surface receiving light and including single crystalline silicon, wet-etching the light incidence surface to form a plurality of first protrusions on the light incidence surface, dry etching a plurality of surfaces of the first protrusions to form a plurality of second protrusions on the plurality of surfaces of the first protrusions, and forming a semiconductor layer on the light incidence surface. The method further includes forming a first electrode on the semiconductor layer and forming a second electrode on a rear surface of the semiconductor substrate facing the light incidence surface.

    摘要翻译: 一种制造光伏器件的方法包括:制备具有光入射表面并包含单晶硅的半导体衬底,湿式蚀刻光入射表面以在光入射表面上形成多个第一突起,干蚀刻多个 所述第一突起的表面在所述第一突起的多个表面上形成多个第二突起,并且在所述光入射表面上形成半导体层。 该方法还包括在半导体层上形成第一电极,并在与半导体衬底相对的光入射面的后表面上形成第二电极。