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公开(公告)号：US10594266B2
公开(公告)日：2020-03-17
申请号：US15830477
申请日：2017-12-04
Applicant: NXP USA, Inc.
Inventor： James Krehbiel , Nick Yang , Joseph Gerard Schultz , Enver Krvavac , Yu-Ting David Wu
Abstract: Embodiments of a multiple-path amplifier (e.g., a Doherty amplifier) and a module housing the amplifier include a first amplifier (or first power transistor die) with a first output terminal, a second amplifier (or second power transistor die) with a second output terminal, and an impedance inverter line assembly electrically connected between the first and second output terminals. The impedance inverter line assembly includes a first transmission line and a surface mount component connected in series between the first and second output terminals. In various embodiments, the surface mount component is selected from a fixed-value capacitor, a fixed-value inductor, a tunable capacitor, a tunable inductor, and a tunable passive component network.
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12.发明授权公开(公告)号：US10566938B1
公开(公告)日：2020-02-18
申请号：US16215877
申请日：2018-12-11
Applicant: NXP USA, Inc.
Inventor： Joseph Gerard Schultz , Yu-Ting David Wu , Nick Yang
IPC: H04B1/48 , H03F3/195 , H01L27/092 , H01L27/06 , H03F3/193
Abstract: Systems for providing isolation of a bias signal relative to a radio frequency (RF) signal in an integrated circuit, and related circuits, modules, and methods, are disclosed herein. In one example embodiment, a system includes an inductor, a bypass capacitor, and a transmission line segment, which includes first and second ends and extends between the first and second ends. The first end is at least indirectly coupled to the bypass capacitor, the second end is at least indirectly coupled to a first additional end of the inductor, and a second additional end of the inductor is configured to be coupled at least indirectly to a device through which the RF signal is being communicated. The transmission line segment is configured to impart a non-negligible phase shift to a signal communicated between the first and second ends, or is configured to have a non-negligible effective inductance.
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Patent Agency Ranking
13.发明授权公开(公告)号：US10381984B2
公开(公告)日：2019-08-13
申请号：US15846162
申请日：2017-12-18
Applicant: NXP USA, Inc.
Inventor： Yu-Ting David Wu , Enver Krvavac , Joseph Gerard Schultz , Nick Yang , Damon G. Holmes , Shishir Ramasare Shukla , Jeffrey Kevin Jones , Elie A. Maalouf , Mario Bokatius
Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.
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公开(公告)号：US20210175186A1
公开(公告)日：2021-06-10
申请号：US16704283
申请日：2019-12-05
Applicant: NXP USA, Inc.
Inventor： Joseph Gerard Schultz , Jeffrey Kevin Jones , Elie A. Maalouf , Yu-Ting David Wu , Nick Yang
IPC: H01L23/66 , H03F1/02 , H01L23/495
Abstract: An embodiment of a Doherty amplifier includes a module substrate, first and second surface-mount devices coupled to a top surface of the module substrate, and an impedance inverter line assembly. The first and second surface-mount devices include first and second amplifier dies, respectively. The impedance inverter line assembly is electrically connected between outputs of the first and second amplifier dies. The impedance inverter line assembly includes an impedance inverter line coupled to the module substrate, a first lead of the first surface-mount device coupled between the first amplifier die output and a proximal end of the impedance inverter line, and a second lead of the second surface-mount device coupled between the second amplifier die output and a distal end of the impedance inverter line. According to a further embodiment, the impedance inverter line assembly has a 90 degree electrical length at a fundamental operational frequency of the Doherty amplifier.
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15.发明授权公开(公告)号：US10284146B2
公开(公告)日：2019-05-07
申请号：US15366550
申请日：2016-12-01
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Nick Yang , Joseph Gerard Schultz
IPC: H03F3/68 , H03F1/02 , H03F3/195 , H03F3/21 , H01L23/66 , H01L23/00 , H01L23/538 , H03F3/189 , H03F3/24
Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.
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公开(公告)号：US10250197B1
公开(公告)日：2019-04-02
申请号：US15804268
申请日：2017-11-06
Applicant: NXP USA, Inc.
Inventor： Joseph Schultz , Enver Krvavac , Yu-Ting David Wu , Nick Yang , Jeffrey Jones , Mario Bokatius , Ricardo Uscola
Abstract: A multiple-stage amplifier includes a driver stage die and a final stage die. The final stage die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a first transistor. The driver stage die includes another type of semiconductor substrate (e.g., a silicon substrate), a second transistor, and one or more secondary circuits that are electrically coupled to a control terminal of the first transistor. A connection (e.g., a wirebond array or other DC-coupled connection) is electrically coupled between an RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die. The secondary circuit(s) of the driver stage die include a final stage bias circuit and/or a final stage harmonic control circuit, which are electrically connected to the final stage die through various connections.
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17.发明申请公开(公告)号：US20180159479A1
公开(公告)日：2018-06-07
申请号：US15366550
申请日：2016-12-01
Applicant: NXP USA, Inc.
Inventor： Yu-Ting Wu , Nick Yang , Joseph Gerard Schultz
CPC classification number: H03F1/0288 , H01L23/538 , H01L23/66 , H01L24/06 , H01L24/46 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2223/6683 , H01L2224/04042 , H01L2224/4917 , H01L2224/49176 , H03F3/189 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/114 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/432 , H03F2200/451 , H03F2203/21103 , H03F2203/21106
Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.
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