公开(公告)号：US5663120A

公开(公告)日：1997-09-02

申请号：US316262

申请日：1994-09-29

申请人： Takeshi Hikata ,  Kenichi Sato

发明人： Takeshi Hikata ,  Kenichi Sato

IPC分类号： C04B35/00 ,  C01G1/00 ,  C04B35/45 ,  H01B12/04 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01L39/248 ,  Y10T29/49014

摘要： In order to prevent expansion of a metal sheath which is heat treated in order to form an oxide high-temperature superconductor therein, the heat treatment temperature is held at a certain level in an intermediate stage of temperature rising in a step of heat treating the metal sheath after filling raw material for an oxide high-temperature superconductor into the metal sheath. After the heat treatment temperature is thus held at the certain level, the metal sheath is again heated to a target temperature. Preferably, the heat treatment temperature is held at a level which is selected in a range of at least 500.degree. C. and not more than 750.degree. C.

摘要翻译： 为了防止热处理以在其中形成氧化物高温超导体的金属护套的膨胀，热处理温度在热处理金属的步骤的中间阶段保持在一定水平 将氧化物高温超导体的原料填充到金属护套中后的护套。 在将热处理温度保持在一定水平之后，将金属护套再次加热至目标温度。 优选地，热处理温度保持在至少500℃且不超过750℃的范围内选择的水平。

公开(公告)号：US09305711B2

公开(公告)日：2016-04-05

申请号：US14003332

申请日：2012-03-08

申请人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

发明人： Jun-ichi Fujita ,  Takeshi Hikata ,  Soichiro Okubo ,  Risa Utsunomiya ,  Teruaki Matsuba

IPC分类号： H01G9/048 ,  H01G11/36 ,  C01B31/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01G9/048 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y99/00 ,  C01B32/168 ,  C01B32/176 ,  C01B2202/02 ,  C01B2202/22 ,  C01B2202/34 ,  C01B2202/36 ,  H01G11/36 ,  Y02E60/13

摘要： A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.

摘要翻译： 可以控制碳纳米结构的几何形状和电气特性。 根据本发明的用于处理碳纳米结构的方法包括以下步骤：制备碳纳米结构（例如碳纳米管）（CNT制备步骤）; 并在使碳纳米管振动的同时将碳纳米管暴露于能量束（例如电子束）（曝光步骤）。 这有助于碳纳米管的长度和电特性的改变。

公开(公告)号：US09162891B2

公开(公告)日：2015-10-20

申请号：US13702710

申请日：2012-02-21

申请人： Takeshi Hikata ,  Soichiro Okubo

发明人： Takeshi Hikata ,  Soichiro Okubo

IPC分类号： C01B31/02 ,  B82Y40/00 ,  B01J19/08 ,  B01J4/00 ,  B01J37/34 ,  B01J23/745 ,  B01J35/00 ,  B82Y30/00 ,  B01J35/06

CPC分类号： C01B31/0206 ,  B01J4/001 ,  B01J19/087 ,  B01J23/745 ,  B01J35/0033 ,  B01J35/06 ,  B01J37/34 ,  B01J37/348 ,  B01J2208/00415 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/162 ,  Y10S977/891

摘要： An apparatus for manufacturing a carbon nanostructure and a method for manufacturing a carbon nanostructure that can achieve an increase in length and shape stabilization of the carbon nanostructure can be obtained. A manufacturing apparatus for a carbon nanostructure includes a catalyst member on which a carbon nanostructure is grown, a source gas supply unit and a source gas supply pipe, a coil, and a heater. The source gas supply unit and the source gas supply pipe supply the catalyst member with carbon for forming the carbon nanotube. The coil applies a gradient magnetic field (e.g., a cusped magnetic field indicated by magnetic flux line whose magnetic field strength gradually increases from one surface of the catalyst member to the other surface opposite to the one surface. The heater heats the catalyst member.

摘要翻译： 可以获得碳纳米结构体的制造装置和碳纳米结构体的制造方法，能够实现碳纳米结构的长度和形状的稳定化。 碳纳米结构体的制造装置包括生长碳纳米结构的催化剂构件，源气体供给单元和源气体供给管，线圈和加热器。 源气体供给单元和源气体供给管为催化剂构件供给形成碳纳米管的碳。 线圈施加梯度磁场（例如，磁场强度从催化剂部件的一个表面逐渐增加到与该一个表面相反的另一个表面的磁通线所表示的切割磁场，加热器加热催化剂部件。

公开(公告)号：US08592338B2

公开(公告)日：2013-11-26

申请号：US10590011

申请日：2004-12-27

申请人： Takeshi Hikata

发明人： Takeshi Hikata

IPC分类号： B01J23/00 ,  D01C5/00

CPC分类号： B82Y40/00 ,  B01J23/75 ,  B01J23/8906 ,  B01J23/8913 ,  B01J35/06 ,  B01J37/00 ,  B01J37/06 ,  B82Y30/00 ,  C01B32/162

摘要： A catalyst structure that allows a carbon nanotube having a desired shape and with larger length to be obtained in a stable manner and in high purity as well as a method of manufacturing a carbon nanotube using the same are provided. The present invention relates to a catalyst structure for use in manufacturing a carbon nanotube by means of vapor deposition of crystalline carbon, having a catalytic material that forms a ring or a whirl on its crystal growth surface, and further relates to a method of manufacturing a carbon nanotube using the same. Preferably, the catalyst structure is a columnar body with its upper surface serving as the crystal growth surface, where at least part of the side of the columnar body has a non-catalytic material that has substantially no catalytic activity with respect to the growth of the crystalline carbon.

摘要翻译： 提供能够以稳定且高纯度获得具有所需形状和长度的碳纳米管的催化剂结构以及使用其制造碳纳米管的方法。 本发明涉及一种用于通过气相沉积结晶碳制造碳纳米管的催化剂结构，其具有在其晶体生长表面上形成环或旋转的催化材料，还涉及一种制造方法 碳纳米管。 优选地，催化剂结构是其上表面用作晶体生长表面的柱状体，其中柱状体的至少一部分侧面具有非催化材料，其相对于 结晶碳。

公开(公告)号：US20130078177A1

公开(公告)日：2013-03-28

申请号：US13702710

申请日：2012-02-21

申请人： Takeshi Hikata ,  Soichiro Okubo

发明人： Takeshi Hikata ,  Soichiro Okubo

IPC分类号： C01B31/02

CPC分类号： C01B31/0206 ,  B01J4/001 ,  B01J19/087 ,  B01J23/745 ,  B01J35/0033 ,  B01J35/06 ,  B01J37/34 ,  B01J37/348 ,  B01J2208/00415 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/162 ,  Y10S977/891

摘要： An apparatus for manufacturing a carbon nanostructure and a method for manufacturing a carbon nanostructure that can achieve an increase in length and shape stabilization of the carbon nanostructure can be obtained. A manufacturing apparatus for a carbon nanostructure includes a catalyst member on which a carbon nanostructure is grown, a source gas supply unit and a source gas supply pipe, a coil, and a heater. The source gas supply unit and the source gas supply pipe supply the catalyst member with carbon for forming the carbon nanotube. The coil applies a gradient magnetic field (e.g., a cusped magnetic field indicated by magnetic flux line whose magnetic field strength gradually increases from one surface of the catalyst member to the other surface opposite to the one surface. The heater heats the catalyst member.

摘要翻译： 可以获得碳纳米结构体的制造装置和碳纳米结构体的制造方法，能够实现碳纳米结构的长度和形状的稳定化。 碳纳米结构体的制造装置包括生长碳纳米结构的催化剂构件，源气体供给单元和源气体供给管，线圈和加热器。 源气体供给单元和源气体供给管为催化剂构件供给形成碳纳米管的碳。 线圈施加梯度磁场（例如，磁场强度从催化剂部件的一个表面逐渐增加到与该一个表面相反的另一个表面的磁通线所表示的切割磁场，加热器加热催化剂部件。

公开(公告)号：US07785558B2

公开(公告)日：2010-08-31

申请号：US11587212

申请日：2005-01-28

申请人： Takeshi Hikata

发明人： Takeshi Hikata

IPC分类号： D01F9/12 ,  D01F9/127 ,  C09C1/56 ,  C23C16/00

CPC分类号： C30B29/02 ,  B01J23/8906 ,  B01J23/8913 ,  B01J23/8993 ,  B01J35/06 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/02 ,  Y10S977/742

摘要： The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.

摘要翻译： 本发明涉及一种制造碳纳米结构的方法，所述碳纳米结构用于通过气相沉积从包括催化材料的催化剂基底的晶体生长表面生长结晶碳，特别涉及一种制造碳纳米结构的方法，其中至少两种气体 包括原料气体同时与催化底物接触。 优选地，至少两种气体由至少一种原料气体和至少一种载气构成。 优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。 优选地，原料气体含有离子，进一步优选含有碳离子。

公开(公告)号：US20070224107A1

公开(公告)日：2007-09-27

申请号：US11587212

申请日：2005-01-28

申请人： Takeshi Hikata

发明人： Takeshi Hikata

IPC分类号： C01B31/02 ,  B82B3/00

CPC分类号： C30B29/02 ,  B01J23/8906 ,  B01J23/8913 ,  B01J23/8993 ,  B01J35/06 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/02 ,  Y10S977/742

摘要： A method of manufacturing carbon nanostructures that allows carbon nanostructures having more uniform shape to be produced in high purity and in a stable manner is provided. The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by means of vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.

摘要翻译： 提供一种制造碳纳米结构的方法，其允许以高纯度和稳定的方式制备具有更均匀形状的碳纳米结构。 本发明涉及一种通过从包括催化材料的催化底物的晶体生长表面进行气相沉积来生长结晶碳的碳纳米结构体的制造方法，特别涉及一种制造碳纳米结构的方法，其中至少 包括原料气体的两种气体同时与催化底物接触。 优选地，至少两种气体由至少一种原料气体和至少一种载气构成。 优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。 优选地，原料气体含有离子，进一步优选含有碳离子。

公开(公告)号：US5378684A

公开(公告)日：1995-01-03

申请号：US757103

申请日：1991-09-10

申请人： Takeshi Hikata ,  Kenichi Sato

发明人： Takeshi Hikata ,  Kenichi Sato

IPC分类号： C04B35/00 ,  C01G1/00 ,  C04B35/45 ,  H01B12/04 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01L39/248 ,  Y10T29/49014

摘要： In order to prevent expansion of a metal sheath which is heat treated in order to form an oxide high-temperature superconductor therein, the heat treatment temperature is held at a certain level in an intermediate stage of temperature rising in a step of heat treating the metal sheath after filling raw material for an oxide high-temperature superconductor into the metal sheath. After the heat treatment temperature is thus held at the certain level, the metal sheath is again heated to a target temperature. Preferably, the heat treatment temperature is held at a level which is selected in a range of at least 500.degree. C. and not more than 750.degree. C.

摘要翻译： 为了防止热处理以在其中形成氧化物高温超导体的金属护套的膨胀，热处理温度在热处理金属的步骤的中间阶段保持在一定水平 将氧化物高温超导体的原料填充到金属护套中后的护套。 在将热处理温度保持在一定水平之后，将金属护套再次加热至目标温度。 优选地，热处理温度保持在至少500℃且不超过750℃的范围内选择的水平。

公开(公告)号：US06641647B2

公开(公告)日：2003-11-04

申请号：US10182516

申请日：2002-07-30

申请人： Takashi Uemura ,  Kentaro Yoshida ,  Nobuyuki Okuda ,  Takeshi Hikata

发明人： Takashi Uemura ,  Kentaro Yoshida ,  Nobuyuki Okuda ,  Takeshi Hikata

IPC分类号： B01D5322

CPC分类号： B01D67/0072 ,  B01D71/02 ,  B01D71/022 ,  B01D2325/04 ,  C01B3/505 ,  Y10S55/05

摘要： A hydrogen permeable structure includes a base material (1) including porous ceramic, and a hydrogen permeable film (2) formed on the base material (1), including palladium (Pd) and at least one element other than palladium and having an amount of hydrogen dissolution at a prescribed temperature smaller than that of palladium alone. The hydrogen permeable film (2) is formed on the surface of the porous ceramic base by a physical vapor deposition technique after any pin holes in the surface of the base have been filled with a porous oxide material.

摘要翻译： 氢可渗透结构包括包括多孔陶瓷的基材（1）和形成在基材（1）上的氢可渗透膜（2），包括钯（Pd）和除钯以外的至少一种元素， 在比单独的钯小的规定温度下氢溶解。 在基底表面的任何针孔填充有多孔氧化物材料之后，通过物理气相沉积技术在多孔陶瓷基底的表面上形成氢可渗透膜（2）。

公开(公告)号：US5902774A

公开(公告)日：1999-05-11

申请号：US955322

申请日：1997-10-20

申请人： Koji Muranaka ,  Kenichi Sato ,  Takeshi Hikata

发明人： Koji Muranaka ,  Kenichi Sato ,  Takeshi Hikata

IPC分类号： H01L39/24

CPC分类号： H01L39/248 ,  Y10T29/49014 ,  Y10T29/4981

摘要： A method of producing a tape-shaped superconducting wire is provided. The wire maintains a high critical temperature and a high critical current density along the overall length thereof. In this method, raw material powder for the oxide superconductor is first charged in a silver sheath and the sheath charged with the powder is subjected to plastic working to prepare a first flat type wire. On the other hand, a second wire consisting of a tape wire formed by coating a surface of a flat type wire having at least an outer surface consisting essentially of silver or a silver alloy with a metal oxide or ceramics, or a tape wire containing ceramics fibers and a binder dissipated by heat treatment is prepared. The first and second wires are layered with each other, and tightly wound in a pancake coil shape. The wires wound in the pancake coil shape are heat treated for sintering the oxide superconductor. After the heat treatment, the first wire is separated from the second wire.

摘要翻译： 提供了一种制造带状超导线材的方法。 导线沿其整个长度保持高临界温度和高临界电流密度。 在该方法中，将首先将氧化物超导体的原料粉末装入银护套中，并对装有粉末的护套进行塑性加工以制备第一扁平型线。 另一方面，一种第二线，其由通过将至少具有由银或银合金构成的外表面与金属氧化物或陶瓷至少包覆的扁平线的表面形成的带状线或者包含陶瓷的带状线 制备通过热处理消散的纤维和粘合剂。 第一和第二线彼此层叠，并且以扁平线圈形状紧密缠绕。 以扁平线圈形状缠绕的线被热处理以烧结氧化物超导体。 在热处理之后，第一线与第二线分离。