公开(公告)号：US20080295763A1

公开(公告)日：2008-12-04

申请号：US12155108

申请日：2008-05-29

申请人： Koji Hirata ,  Shiro Yamazaki

发明人： Koji Hirata ,  Shiro Yamazaki

IPC分类号： C30B7/08

CPC分类号： C30B29/403 ,  C30B9/10 ,  Y10T117/1024

摘要： A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low.

摘要翻译： 根据通量法生长III族氮化物半导体晶体。 在晶体生长过程完成之后，当坩埚的温度为100℃或更高时，Na通过回收装置从坩埚中排出，并保持在液态的保持容器中。 回收的Na可以通过龙头从容器中取出。 在晶体生长过程完成后残留的Na不含有高蒸汽压的杂质，因此具有高纯度。 因此，作为助熔剂回收的Na的再利用可以制造其杂质浓度低的III族氮化物半导体。

公开(公告)号：US20090106959A1

公开(公告)日：2009-04-30

申请号：US12289257

申请日：2008-10-23

申请人： Shiro Yamazaki ,  Koji Hirata

发明人： Shiro Yamazaki ,  Koji Hirata

IPC分类号： H01L21/67

CPC分类号： C30B29/403 ,  C30B9/10 ,  Y10T29/41 ,  Y10T117/10

摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.

摘要翻译： 本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元， 旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分， 旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中， 气体和熔体反应以生长III族氮化物半导体晶体。

公开(公告)号：US08343239B2

公开(公告)日：2013-01-01

申请号：US12289257

申请日：2008-10-23

申请人： Shiro Yamazaki ,  Koji Hirata

发明人： Shiro Yamazaki ,  Koji Hirata

IPC分类号： H01L21/02 ,  C30B9/00 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  Y10T29/41 ,  Y10T117/10

摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.

公开(公告)号：US08349079B2

公开(公告)日：2013-01-08

申请号：US12153973

申请日：2008-05-28

申请人： Shiro Yamazaki ,  Koji Hirata

发明人： Shiro Yamazaki ,  Koji Hirata

IPC分类号： C30B35/00 ,  C30B11/00

CPC分类号： C30B29/403 ,  C01B21/0632 ,  C30B9/00 ,  Y10T117/10 ,  Y10T117/1024

摘要： An apparatus for manufacturing a Group III nitride semiconductor is composed of a pressure vessel, a reaction vessel disposed within the pressure vessel, a heating device disposed within the pressure vessel so as to heat the reaction vessel, and a glove box filled with argon gas. The pressure vessel and the glove box are connected to each other via a gate valve. By virtue of this configuration, a large-sized reusable reaction vessel can be disposed within the pressure vessel without causing oxidation of Na.

摘要翻译： 用于制造III族氮化物半导体的装置由压力容器，设置在压力容器内的反应容器，设置在压力容器内以加热反应容器的加热装置和装有氩气的手套箱组成。 压力容器和手套箱通过闸阀相互连接。 由于这种构造，可以在压力容器内设置大尺寸的可重复使用的反应容器，而不会引起Na的氧化。

公开(公告)号：US07981744B2

公开(公告)日：2011-07-19

申请号：US11578965

申请日：2005-06-09

申请人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

发明人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

摘要翻译： 一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构， 层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层 平面。

公开(公告)号：US07524741B2

公开(公告)日：2009-04-28

申请号：US11393808

申请日：2006-03-31

申请人： Yasuhisa Ushida ,  Daisuke Shinoda ,  Daisuke Yamazaki ,  Koji Hirata ,  Yuhei Ikemoto ,  Naoki Shibata ,  Kazuo Aoki ,  Encarnacion Antonia Garcia Villora ,  Kiyoshi Shimamura

发明人： Yasuhisa Ushida ,  Daisuke Shinoda ,  Daisuke Yamazaki ,  Koji Hirata ,  Yuhei Ikemoto ,  Naoki Shibata ,  Kazuo Aoki ,  Encarnacion Antonia Garcia Villora ,  Kiyoshi Shimamura

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

摘要翻译： 一种形成低温生长缓冲层的方法，具有以下步骤：将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。 并在缓冲层生长条件下将具有TMG，TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上，以在Ga 2 O 3衬底上形成低温生长缓冲层。

公开(公告)号：US20060223287A1

公开(公告)日：2006-10-05

申请号：US11393808

申请日：2006-03-31

申请人： Yasuhisa Ushida ,  Daisuke Shinoda ,  Daisuke Yamazaki ,  Koji Hirata ,  Yuhei Ikemoto ,  Naoki Shibata ,  Kazuo Aoki ,  Encarnacion Garcia Villora ,  Kiyoshi Shimamura

发明人： Yasuhisa Ushida ,  Daisuke Shinoda ,  Daisuke Yamazaki ,  Koji Hirata ,  Yuhei Ikemoto ,  Naoki Shibata ,  Kazuo Aoki ,  Encarnacion Garcia Villora ,  Kiyoshi Shimamura

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

摘要翻译： 一种形成低温生长缓冲层的方法，其具有以下步骤：将Ga 2 N 3 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2 O 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。 并在缓冲层生长条件下将具有TMG，TMA和NH 3的两种或多种的源气体供应到Ga 2 O 3 N 3衬底上 以在Ga 2 N 3 O 3衬底上形成低温生长的缓冲层。

公开(公告)号：US20070278532A1

公开(公告)日：2007-12-06

申请号：US11578965

申请日：2005-06-09

申请人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

发明人： Masayoshi Kosaki ,  Koji Hirata ,  Masanobu Senda ,  Naoki Shibata

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L21/338 ,  H01L29/812 ,  H01L21/36

CPC分类号： H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003

摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.

摘要翻译： 一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构， 层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层 平面。

公开(公告)号：US20150002829A1

公开(公告)日：2015-01-01

申请号：US14377302

申请日：2012-02-09

申请人： Koji Hirata ,  Miyuki Ikeda ,  Tatsuya Ishikawa ,  Hiroyuki Shinji

发明人： Koji Hirata ,  Miyuki Ikeda ,  Tatsuya Ishikawa ,  Hiroyuki Shinji

IPC分类号： G03B21/54 ,  G03B21/14

CPC分类号： G03B21/54 ,  G03B21/14 ,  G03B21/145

摘要： Provided is a projection-type image display device which by means of a projection lens (2) magnifies and projects an optical image formed by a light source and an image display element, wherein an error indicator (5) for indicating anomalies in the device is disposed on the rear surface opposite the front surface of a device housing (1) to which the projection lens (2) is attached. The projection-type image display device further includes an AC voltage monitor unit (12) for monitoring voltage waveforms supplied form an external power source and retaining voltage waveform data during the latest prescribed period in a memory, and reads out the voltage waveform data from the external power source retained in the memory and displays the voltage waveform data on the error indicator (5) as said anomalies.

摘要翻译： 提供一种通过投影透镜（2）放大并投影由光源形成的光学图像和图像显示元件的投影型图像显示装置，其中，用于指示装置中的异常的误差指示器（5） 设置在与投影透镜（2）所附接的装置壳体（1）的前表面相对的后表面上。 投影型图像显示装置还包括用于监视从外部电源提供的电压波形并将最近规定期间内的电压波形数据保存在存储器中的AC电压监视器单元（12），并从 外部电源保留在存储器中，并将错误指示器（5）上的电压波形数据显示为所述异常。

公开(公告)号：US08313199B2

公开(公告)日：2012-11-20

申请号：US11871438

申请日：2007-10-12

申请人： Koji Hirata ,  Masahiko Yatsu ,  Takanori Hisada ,  Masayuki Ohki

发明人： Koji Hirata ,  Masahiko Yatsu ,  Takanori Hisada ,  Masayuki Ohki

IPC分类号： G03B21/26 ,  G03B21/56 ,  G02B3/00

CPC分类号： G03B21/56 ,  G02B17/08 ,  G02B17/0852 ,  G03B21/10 ,  G03B21/14 ,  G03B21/28

摘要： A projection display system comprising a projection display unit including a light source, an image display element, a lighting optical system irradiating a beam of light on the image display element, and a projection optical system projecting an image light from the image display element toward a screen. The projection optical system including a lens group composed of a plurality of lens elements arranged in order toward the screen from the image display element and symmetrically with respect to an optical axis, and a reflecting mirror shaped to be axial-asymmetrical with respect to the optical axis. The projection display system further comprises a screen 5. The projection display unit projects the image light onto a projection plane of the screen to display an image.

摘要翻译： 一种投影显示系统，包括：投影显示单元，包括光源，图像显示元件，照射在所述图像显示元件上的光束的照明光学系统;以及投影光学系统，将图像光从所述图像显示元件投射到 屏幕。 投影光学系统包括由从图像显示元件顺序排列并相对于光轴对称布置的多个透镜元件的透镜组以及相对于光学轴向不对称成形的反射镜 轴。 投影显示系统还包括屏幕5.投影显示单元将图像光投影到屏幕的投影平面上以显示图像。