公开(公告)号：US5296088A

公开(公告)日：1994-03-22

申请号：US924483

申请日：1992-08-04

申请人： Kunihiko Kodama ,  Nobuyuki Ohtsuka ,  Masashi Ozeki ,  Yoshiki Sakuma

发明人： Kunihiko Kodama ,  Nobuyuki Ohtsuka ,  Masashi Ozeki ,  Yoshiki Sakuma

IPC分类号： C30B25/02 ,  H01L21/203

CPC分类号： C30B25/02 ,  C30B29/40 ,  Y10S148/057

摘要： A compound semiconductor crystal growing method includes the steps of (a) setting a substrate having a substrate surface in a reaction chamber, and (b) supplying a material gas of a compound semiconductor which is to be grown in the form of a crystal on the substrate surface within the reaction chamber and a control gas to the reaction chamber under a predetermined condition, and controlling the supply of the control gas to control an adsorption rate of the material gas on the substrate surface. The control gas makes competitive adsorption with the material gas on the substrate surface but makes no chemical reaction such that no continual accumulation on the substrate surface occurs under the predetermined condition. The competitive adsorption is defined as a phenomenon in which the material gas and the control gas compete and become adsorped on the substrate surface.

摘要翻译： 化合物半导体晶体生长方法包括以下步骤：（a）在反应室中设置具有基板表面的基板，（b）将待生长在晶体形式的化合物半导体的材料气体 反应室内的基板表面和在预定条件下到达反应室的控制气体，并且控制控制气体的供应以控制材料气体在基板表面上的吸附速率。 控制气体与衬底表面上的材料气体进行竞争性吸附，但不发生化学反应，使得在预定条件下不会在衬底表面上发生持续的积累。 竞争性吸附被定义为材料气体和对照气体在衬底表面上竞争并被吸附的现象。

公开(公告)号：US5130269A

公开(公告)日：1992-07-14

申请号：US342785

申请日：1989-04-25

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

公开(公告)号：US20070114169A1

公开(公告)日：2007-05-24

申请号：US10582003

申请日：2004-12-22

申请人： Nobuo Suzuki ,  Kunio Takagi ,  Toshihide Oku ,  Masashi Ozeki ,  Hirokazu Sugiura ,  Takeshi Kudo

发明人： Nobuo Suzuki ,  Kunio Takagi ,  Toshihide Oku ,  Masashi Ozeki ,  Hirokazu Sugiura ,  Takeshi Kudo

IPC分类号： B01D27/00

CPC分类号： F02M37/22 ,  B01D29/012 ,  B01D29/071 ,  B01D35/027

摘要： The present invention has an object to provide a filter device in which a filter is directly fixed to a container, thus eliminating the use of a filter frame. A fuel filter 6 of a fuel supply system 60 includes a filter element 22 for filtering fuel and a filter case 21 made of resin which houses the filter element 22. Ends 22b and 22c of the filter element 22 are directly fixed to an inner wall surface of the filter case 21 by welding. Further, the filter case 21 is formed, on the inner wall surface, with a groove 34 at each end of a weld part 36 in a longitudinal (vertical) direction. The groove 34 serves to receive a melted resin squeezed out from the weld part 36. To isolate the weld part 36 from a (filtering) body 22a of the filter element 22, protrusive ribs 32 and 33 are provided on the inner wall surface of the filter case 21.

摘要翻译： 本发明的目的是提供一种过滤器装置，其中过滤器直接固定在容器上，从而消除了过滤器框架的使用。 燃料供给系统60的燃料过滤器6包括用于过滤燃料的过滤元件22和容纳过滤元件22的由树脂制成的过滤器壳体21。 过滤器元件22的端部22b和22c通过焊接直接固定到过滤器壳体21的内壁表面。 此外，过滤器壳体21在内壁表面上在纵向（垂直）方向上在焊接部分36的每个端部处形成有凹槽34。 槽34用于接收从焊接部36挤出的熔融树脂。 为了将焊接部分36与过滤元件22的（过滤）主体22a隔离，突出肋32和33设置在过滤器壳体21的内壁表面上。

公开(公告)号：US20050109314A1

公开(公告)日：2005-05-26

申请号：US10995562

申请日：2004-11-24

申请人： Koichi Suzuki ,  Masashi Ozeki ,  Hisashi Kino

发明人： Koichi Suzuki ,  Masashi Ozeki ,  Hisashi Kino

IPC分类号： F02D9/10

CPC分类号： F02D9/1035 ,  Y10T137/0525

摘要： A throttle body comprising a main body defining a cylindrical intake air channel and including a valve member movable between an open and a fully closed position. The valve seal surface and a contact surface are configured such that the valve seal surface sealingly contacts with the corresponding contact surface when a fully closed position of the valve has been displaced due to contraction of one of the main body and the valve member. The valve seal surface and the contact surface of the valve member in the fully closed position are inclined by an angle. The contact angle of inclination gradually decreases from a first point located on a circumference of the periphery of the valve member resulting from a line perpendicular to an intersection of the central axis and the rotation axis to a second point that is proximate to the rotation axis of the valve member.

摘要翻译： 一种节气门体，包括限定圆柱形进气通道的主体，并且包括可在打开和完全关闭位置之间移动的阀构件。 阀密封表面和接触表面构造成使得当阀门的完全关闭位置由于主体和阀构件之一的收缩而被移位时，阀密封表面与对应的接触表面密封地接触。 阀门密封表面和阀构件在完全关闭位置的接触表面倾斜一定角度。 从垂直于中心轴线和旋转轴线的交点的垂直于垂直于中心轴线和旋转轴线的交点的线形成的阀构件周边的第一点的倾斜接触角逐渐减小， 阀构件。

公开(公告)号：US5166092A

公开(公告)日：1992-11-24

申请号：US608602

申请日：1990-10-30

申请人： Kouji Mochizuki ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kouji Mochizuki ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205

CPC分类号： H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： A method of growing compound semiconductor epitaxial layer by an atomic layer epitaxy, comprises the steps of blowing on a predetermined surface a compound source material gas constituted by atoms having an ion polarity different from atoms constituting the predetermined surface so that the compound source material is adsorped on the predetermined surface in a non-decomposed state, and decomposing the adsorped compound source material on the predetermined surface into atoms constituting crystals at the predetermined surface so as to grow an atomic layer of atoms having the same ion polarity as the compound source material gas. The ion polarity of the atomic layer prevents adsorption of the compound source material after the atomic layer is grown.

摘要翻译： 通过原子层外延生长化合物半导体外延层的方法包括以下步骤：在预定表面上吹送由具有与构成预定表面的原子不同的离子极性的原子构成的化合物源材料，以使化合物源材料被吸附 在未分解状态的预定表面上，并将预定表面上的吸附的化合物源材料分解成在预定表面上构成晶体的原子，以便生长具有与复合源材料气体相同离子极性的原子的原子层 。 原子层的离子极性在原子层生长后防止了化合物源材料的吸附。

公开(公告)号：US07047936B2

公开(公告)日：2006-05-23

申请号：US10995562

申请日：2004-11-24

申请人： Koichi Suzuki ,  Masashi Ozeki ,  Hisashi Kino

发明人： Koichi Suzuki ,  Masashi Ozeki ,  Hisashi Kino

IPC分类号： F02D9/08 ,  F16K1/22

CPC分类号： F02D9/1035 ,  Y10T137/0525

摘要： A throttle body comprising a main body defining a cylindrical intake air channel and including a valve member movable between an open and a fully closed position. The valve seal surface and a contact surface are configured such that the valve seal surface sealingly contacts with the corresponding contact surface when a fully closed position of the valve has been displaced due to contraction of one of the main body and the valve member. The valve seal surface and the contact surface of the valve member in the fully closed position are inclined by an angle. The contact angle of inclination gradually decreases from a first point located on a circumference of the periphery of the valve member resulting from a line perpendicular to an intersection of the central axis and the rotation axis to a second point that is proximate to the rotation axis of the valve member.

摘要翻译： 一种节气门体，包括限定圆柱形进气通道的主体，并且包括可在打开和完全关闭位置之间移动的阀构件。 阀密封表面和接触表面构造成使得当阀门的完全关闭位置由于主体和阀构件之一的收缩而被移位时，阀密封表面与对应的接触表面密封地接触。 阀门密封表面和阀构件在完全关闭位置的接触表面倾斜一定角度。 从垂直于中心轴线和旋转轴线的交点的垂直于垂直于中心轴线和旋转轴线的交点的线形成的阀构件周边的第一点的倾斜接触角逐渐减小， 阀构件。

公开(公告)号：US5484664A

公开(公告)日：1996-01-16

申请号：US184438

申请日：1994-01-21

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  H01L27/12

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

摘要翻译： 在硅衬底上生长砷化镓单晶层的方法包括以下步骤：通过原子层外延在硅衬底上生长砷化铝缓冲层，并在外延生长缓冲层上的砷化镓单晶层。

公开(公告)号：US5300186A

公开(公告)日：1994-04-05

申请号：US864552

申请日：1992-04-07

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  C30B25/16

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

摘要翻译： 在硅衬底上生长砷化镓单晶层的方法包括以下步骤：通过原子层外延在硅衬底上生长砷化铝缓冲层，并在外延生长缓冲层上的砷化镓单晶层。

公开(公告)号：US5270247A

公开(公告)日：1993-12-14

申请号：US910766

申请日：1992-07-08

申请人： Yoshiki Sakuma ,  Masashi Ozeki ,  Nobuyuki Ohtuka ,  Kunihiko Kodama

发明人： Yoshiki Sakuma ,  Masashi Ozeki ,  Nobuyuki Ohtuka ,  Kunihiko Kodama

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02395 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/048 ,  Y10S148/072

摘要： A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.

公开(公告)号：US4861417A

公开(公告)日：1989-08-29

申请号：US172671

申请日：1988-03-24

申请人： Kouji Mochizuki ,  Masashi Ozeki ,  Nobuyuki Ohtsuka

发明人： Kouji Mochizuki ,  Masashi Ozeki ,  Nobuyuki Ohtsuka

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/68 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  Y10S117/902

摘要： A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy grows an aluminum layer on one of {100}, (111)B, ( 111)B, (111)B, and (111)B planes of the substrate by supplying a quantity of aluminum amounting to at least two times a surface density in a group III-V compound semiconductor epitaxial layer or grows an aluminum layer on one of {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density in the group III-V compound semiconductor epitaxial layer, and grows a layer of a group V material on the aluminum layer by supplying a quantity of the group V material amounting to at least two or three times a surface density in the group III-V compound semiconductor epitaxial layer. The layer of the group V material and the aluminum layer constituting the group III-V compound semiconductor epitaxial layer.