公开(公告)号：US5166092A

公开(公告)日：1992-11-24

申请号：US608602

申请日：1990-10-30

申请人： Kouji Mochizuki ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kouji Mochizuki ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205

CPC分类号： H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： A method of growing compound semiconductor epitaxial layer by an atomic layer epitaxy, comprises the steps of blowing on a predetermined surface a compound source material gas constituted by atoms having an ion polarity different from atoms constituting the predetermined surface so that the compound source material is adsorped on the predetermined surface in a non-decomposed state, and decomposing the adsorped compound source material on the predetermined surface into atoms constituting crystals at the predetermined surface so as to grow an atomic layer of atoms having the same ion polarity as the compound source material gas. The ion polarity of the atomic layer prevents adsorption of the compound source material after the atomic layer is grown.

摘要翻译： 通过原子层外延生长化合物半导体外延层的方法包括以下步骤：在预定表面上吹送由具有与构成预定表面的原子不同的离子极性的原子构成的化合物源材料，以使化合物源材料被吸附 在未分解状态的预定表面上，并将预定表面上的吸附的化合物源材料分解成在预定表面上构成晶体的原子，以便生长具有与复合源材料气体相同离子极性的原子的原子层 。 原子层的离子极性在原子层生长后防止了化合物源材料的吸附。

公开(公告)号：US4861417A

公开(公告)日：1989-08-29

申请号：US172671

申请日：1988-03-24

申请人： Kouji Mochizuki ,  Masashi Ozeki ,  Nobuyuki Ohtsuka

发明人： Kouji Mochizuki ,  Masashi Ozeki ,  Nobuyuki Ohtsuka

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/68 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  Y10S117/902

摘要： A method of growing a group III-V compound semiconductor epitaxial layer on a substrate by use of atomic layer epitaxy grows an aluminum layer on one of {100}, (111)B, ( 111)B, (111)B, and (111)B planes of the substrate by supplying a quantity of aluminum amounting to at least two times a surface density in a group III-V compound semiconductor epitaxial layer or grows an aluminum layer on one of {110} planes of the substrate by supplying a quantity of aluminum amounting to at least three times the surface density in the group III-V compound semiconductor epitaxial layer, and grows a layer of a group V material on the aluminum layer by supplying a quantity of the group V material amounting to at least two or three times a surface density in the group III-V compound semiconductor epitaxial layer. The layer of the group V material and the aluminum layer constituting the group III-V compound semiconductor epitaxial layer.

公开(公告)号：US5296088A

公开(公告)日：1994-03-22

申请号：US924483

申请日：1992-08-04

申请人： Kunihiko Kodama ,  Nobuyuki Ohtsuka ,  Masashi Ozeki ,  Yoshiki Sakuma

发明人： Kunihiko Kodama ,  Nobuyuki Ohtsuka ,  Masashi Ozeki ,  Yoshiki Sakuma

IPC分类号： C30B25/02 ,  H01L21/203

CPC分类号： C30B25/02 ,  C30B29/40 ,  Y10S148/057

摘要： A compound semiconductor crystal growing method includes the steps of (a) setting a substrate having a substrate surface in a reaction chamber, and (b) supplying a material gas of a compound semiconductor which is to be grown in the form of a crystal on the substrate surface within the reaction chamber and a control gas to the reaction chamber under a predetermined condition, and controlling the supply of the control gas to control an adsorption rate of the material gas on the substrate surface. The control gas makes competitive adsorption with the material gas on the substrate surface but makes no chemical reaction such that no continual accumulation on the substrate surface occurs under the predetermined condition. The competitive adsorption is defined as a phenomenon in which the material gas and the control gas compete and become adsorped on the substrate surface.

摘要翻译： 化合物半导体晶体生长方法包括以下步骤：（a）在反应室中设置具有基板表面的基板，（b）将待生长在晶体形式的化合物半导体的材料气体 反应室内的基板表面和在预定条件下到达反应室的控制气体，并且控制控制气体的供应以控制材料气体在基板表面上的吸附速率。 控制气体与衬底表面上的材料气体进行竞争性吸附，但不发生化学反应，使得在预定条件下不会在衬底表面上发生持续的积累。 竞争性吸附被定义为材料气体和对照气体在衬底表面上竞争并被吸附的现象。

公开(公告)号：US5130269A

公开(公告)日：1992-07-14

申请号：US342785

申请日：1989-04-25

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminum arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

公开(公告)号：US5484664A

公开(公告)日：1996-01-16

申请号：US184438

申请日：1994-01-21

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  H01L27/12

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

摘要翻译： 在硅衬底上生长砷化镓单晶层的方法包括以下步骤：通过原子层外延在硅衬底上生长砷化铝缓冲层，并在外延生长缓冲层上的砷化镓单晶层。

公开(公告)号：US5300186A

公开(公告)日：1994-04-05

申请号：US864552

申请日：1992-04-07

申请人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

发明人： Kuninori Kitahara ,  Nobuyuki Ohtsuka ,  Masashi Ozeki

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/203 ,  C30B25/16

CPC分类号： H01L21/02546 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0262 ,  Y10S438/933 ,  Y10T428/12674

摘要： A method of growing a gallium arsenide single crystal layer on a silicon substrate comprises steps of growing a buffer layer of aluminium arsenide on the silicon substrate by atomic layer epitaxy, and growing the gallium arsenide single crystal layer on the buffer layer epitaxially.

摘要翻译： 在硅衬底上生长砷化镓单晶层的方法包括以下步骤：通过原子层外延在硅衬底上生长砷化铝缓冲层，并在外延生长缓冲层上的砷化镓单晶层。

公开(公告)号：US5497024A

公开(公告)日：1996-03-05

申请号：US223501

申请日：1994-04-05

申请人： Akira Shibuya ,  Kazuo Hattori ,  Masashi Ozeki

发明人： Akira Shibuya ,  Kazuo Hattori ,  Masashi Ozeki

IPC分类号： H01L21/316 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/336 ,  H01L21/338 ,  H01L23/31 ,  H01L29/51 ,  H01L29/78 ,  H01L29/812 ,  H01L23/58 ,  H01L29/76

CPC分类号： H01L29/513 ,  H01L21/28264 ,  H01L21/314 ,  H01L23/3171 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/66871 ,  H01L29/812 ,  H01L2924/0002 ,  H01L2924/13063

摘要： A combination of a semiconductor region essentially consisting of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAs.sub.x P.sub.y O.sub.z (w, y, z>0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.

摘要翻译： 基本上由Al x Ga 1-x As（0≤x≤1）组成的半导体区域的组合，形成在半导体区域的表面上并且基本上由GaAs x P y O z（w，y，z> 0）组成的绝缘膜， 以及形成在绝缘膜上并由与绝缘膜不同的绝缘材料制成的钝化膜。 层叠绝缘膜具有极低的漏电流。 可以通过在层压绝缘膜的表面上形成栅电极来实现优异的MISFET。

公开(公告)号：US08635986B2

公开(公告)日：2014-01-28

申请号：US12908951

申请日：2010-10-21

申请人： Tsutomu Ikeda ,  Katsumi Ishida ,  Makoto Mase ,  Shuji Yamamoto ,  Tetsuo Suzuoki ,  Masashi Ozeki

发明人： Tsutomu Ikeda ,  Katsumi Ishida ,  Makoto Mase ,  Shuji Yamamoto ,  Tetsuo Suzuoki ,  Masashi Ozeki

IPC分类号： G01B7/30

CPC分类号： F02D9/105 ,  F02D9/1065 ,  F02D11/106 ,  G01D5/145 ,  G01D11/245

摘要： Angle sensor device has magnetic force detectors detecting alternation of magnetic force caused by rotation of a throttle gear. The magnetic force detectors are buried in a molded body of the angle sensor device constructed of foamed resin. The magnetic force detectors each has a sensing unit detecting alteration of magnetic force and a computing unit computing based on signals from the sensing unit and outputting signals depending on the alteration of magnetic force and is formed in L-shape. Two of the magnetic force detectors are placed opposite each other such that one of the sensing units is disposed on the other sensing unit. The molded body has a cavity surrounded by the magnetic force detectors.

摘要翻译： 角度传感器装置具有磁力检测器，用于检测由节流齿轮旋转引起的磁力的变化。 磁力检测器被埋在由发泡树脂构成的角度传感器装置的成型体中。 磁力检测器各自具有检测磁力变化的感测单元和基于来自感测单元的信号的计算单元计算，并且根据磁力的变化输出信号，并且形成为L形。 两个磁力检测器彼此相对放置，使得感测单元中的一个设置在另一感测单元上。 成型体具有由磁力检测器包围的空腔。

公开(公告)号：US08444904B2

公开(公告)日：2013-05-21

申请号：US12923824

申请日：2010-10-08

申请人： Naoto Miyauchi ,  Masashi Ozeki ,  Yoshiyasu Yasui ,  Akihiro Kamiya ,  Hiroki Shimada

发明人： Naoto Miyauchi ,  Masashi Ozeki ,  Yoshiyasu Yasui ,  Akihiro Kamiya ,  Hiroki Shimada

IPC分类号： F16H55/06

CPC分类号： F16H55/06 ,  B29C45/0025 ,  B29C2045/0027 ,  B29L2015/003 ,  F16H2055/065 ,  Y10T74/19851 ,  Y10T74/1987

摘要： A resin gear comprises a rim in an outer peripheral part of a plate, teeth provided on an outer periphery of the rim, a boss provided in a central part of the plate, and a circular rib between the boss and the rim. The resin gear is manufacturable by injection molding that a molten material is injected into a cavity through a plurality of gates arranged at almost equally spaced intervals circumferentially on a forming portion for the circular rib in a direction perpendicular to a side of the plate. The resin gear includes a plurality of inner thin-wall portions on the plate between the circular rib and the boss and a plurality of outer thin-wall portions on the plate between the circular rib and the rim, each of the inner thin-wall portions and the outer thin-wall portions being symmetrically shaped with respect to the radial line passing through each gate corresponding point.

摘要翻译： 树脂齿轮包括在板的外周部分中的边缘，设置在轮辋的外周上的齿，设置在板的中心部分的凸台和在凸台和轮辋之间的圆形肋。 树脂齿轮可以通过注射成型制造，通过在垂直于板的一侧的方向上的圆形肋的成形部分周向间隔几乎等间隔的多个浇口注入熔融材料。 树脂齿轮包括在圆形肋和凸台之间的板上的多个内部薄壁部分和在圆形肋和边缘之间的板上的多个外部薄壁部分，每个内部薄壁部分 并且外薄壁部分相对于穿过每个浇口对应点的径向线对称成形。

公开(公告)号：US20110024946A1

公开(公告)日：2011-02-03

申请号：US12923824

申请日：2010-10-08

申请人： Naoto Miyauchi ,  Masashi Ozeki ,  Yoshiyasu Yasui ,  Akihiro Kamiya ,  Hiroki Shimada

发明人： Naoto Miyauchi ,  Masashi Ozeki ,  Yoshiyasu Yasui ,  Akihiro Kamiya ,  Hiroki Shimada

IPC分类号： B29C45/14

CPC分类号： F16H55/06 ,  B29C45/0025 ,  B29C2045/0027 ,  B29L2015/003 ,  F16H2055/065 ,  Y10T74/19851 ,  Y10T74/1987

摘要： A resin gear comprises a rim in an outer peripheral part of a plate, teeth provided on an outer periphery of the rim, a boss provided in a central part of the plate, and a circular rib between the boss and the rim. The resin gear is manufacturable by injection molding that a molten material is injected into a cavity through a plurality of gates arranged at almost equally spaced intervals circumferentially on a forming portion for the circular rib in a direction perpendicular to a side of the plate. The resin gear includes a plurality of inner thin-wall portions on the plate between the circular rib and the boss and a plurality of outer thin-wall portions on the plate between the circular rib and the rim, each of the inner thin-wall portions and the outer thin-wall portions being symmetrically shaped with respect to the radial line passing through each gate corresponding point.

摘要翻译： 树脂齿轮包括在板的外周部分中的边缘，设置在轮辋的外周上的齿，设置在板的中心部分的凸台和在凸台和轮辋之间的圆形肋。 树脂齿轮可以通过注射成型制造，通过在垂直于板的一侧的方向上的圆形肋的成形部分周向间隔几乎等间隔的多个浇口将熔融材料注入空腔。 树脂齿轮包括在圆形肋和凸台之间的板上的多个内部薄壁部分和在圆形肋和边缘之间的板上的多个外部薄壁部分，每个内部薄壁部分 并且所述外部薄壁部分相对于穿过每个浇口对应点的径向线对称地成形。