公开(公告)号：US20120117547A1

公开(公告)日：2012-05-10

申请号：US13251463

申请日：2011-10-03

申请人： GOGUL BALAKRISHNAN ,  Naoto Maeda ,  Franjo Ivancic ,  Nishant Sinha ,  Aarti Gupta ,  Jing Yang

发明人： GOGUL BALAKRISHNAN ,  Naoto Maeda ,  Franjo Ivancic ,  Nishant Sinha ,  Aarti Gupta ,  Jing Yang

IPC分类号： G06F9/45

CPC分类号： G06F8/4434 ,  G06F8/24 ,  G06F8/443 ,  G06F8/51 ,  G06F8/75

摘要： A model is provided for transforming a program with a priori given class hierarchy that is induced by inheritance. An inheritance remover is configured to remove inheritance from a given program to produce an analysis-friendly program which does not include virtual-function pointer tables and runtime libraries associated with inheritance-related operations. The analysis-friendly program preserves the semantics of the given program with respect to a given class hierarchy. A clarifier is configured to identify implicit expressions and function calls and transform the given program into at least one intermediate program having explicit expressions and function calls.

摘要翻译： 提供了一个模型，用于使用由继承引发的先验给定的类层次结构来转换程序。 继承去除器配置为从给定的程序中删除继承，以生成一个不包含与继承相关的操作相关联的虚拟函数指针表和运行时库的分析友好的程序。 分析友好的程序保留给定程序相对于给定类层次结构的语义。 澄清器被配置为识别隐式表达式和函数调用，并将给定程序转换成具有显式表达式和函数调用的至少一个中间程序。

公开(公告)号：US08034315B2

公开(公告)日：2011-10-11

申请号：US12235244

申请日：2008-09-22

申请人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

IPC分类号： H01L29/72

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683 ,  H01L51/0048 ,  Y10S977/712 ,  Y10S977/721 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/781

摘要： Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.

摘要翻译： 一些实施方案包括含有CNT束的装置。 起伏的形貌在碳纳米管之间和CNT之间的空间内延伸。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料直接在碳纳米管之上，其中材料是具有超过全局最大横向宽度的最小横截面赤道宽度的多个颗粒。 一些实施例包括在半导体衬底上形成多个交叉碳纳米管的方法。 CNT形成延伸跨过CNT并且在CNT之间的空间内的波状上部形貌。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料沉积在CNT上，其中材料被沉积成具有超过全局最大横向宽度的最小横截面赤道宽度的颗粒。

公开(公告)号：US20110193190A1

公开(公告)日：2011-08-11

申请号：US13088863

申请日：2011-04-18

申请人： Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

发明人： Nishant Sinha ,  Gurtej S. Sandhu ,  John Smythe

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.

摘要翻译： 电子设备，系统和方法包括结合到晶片或基板的主体区域的半导体层，其中半导体层可以使用电磁辐射结合到主体区域。 公开了附加装置，系统和方法。

公开(公告)号：US20110143543A1

公开(公告)日：2011-06-16

申请号：US13032492

申请日：2011-02-22

申请人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： NIRAJ RANA ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/306

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US20110078511A1

公开(公告)日：2011-03-31

申请号：US12894710

申请日：2010-09-30

申请人： Nishant Sinha ,  Chao Wang

发明人： Nishant Sinha ,  Chao Wang

IPC分类号： G06F11/08 ,  G06F11/00

CPC分类号： G06F11/3604

摘要： Methods and systems for concurrent program verification. A concurrent program is summarized into a symbolic interference skeleton (IS) using data flow analysis. Sequential consistency constraints are enforced on read and write events in the IS. Error conditions are checked together with the IS using a processor.

摘要翻译： 并发程序验证的方法和系统。 使用数据流分析将并发程序总结为符号干扰骨架（IS）。 在IS中的读写事件上执行顺序一致性约束。 使用处理器与IS一起检查错误状况。

公开(公告)号：US07892937B2

公开(公告)日：2011-02-22

申请号：US12252499

申请日：2008-10-16

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/20

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US07837805B2

公开(公告)日：2010-11-23

申请号：US11847073

申请日：2007-08-29

申请人： Gurtej S. Sandhu ,  Nishant Sinha

发明人： Gurtej S. Sandhu ,  Nishant Sinha

IPC分类号： B08B3/04 ,  B08B3/08 ,  B08B3/10

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B24C1/003 ,  B24C5/005 ,  H01L21/02096

摘要： Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.

摘要翻译： 一些实施方案包括用气溶胶颗粒处理表面的方法。 气溶胶颗粒可以形成为液体颗粒，然后在使颗粒撞击表面之前改变颗粒的弹性的条件下通过室。 弹性的变化可能是弹性的增加或弹性的降低。 弹性变化可以通过引起气溶胶颗粒的一种或多种组分的相变，例如通过至少部分地冷冻气溶胶颗粒，或通过在气溶胶颗粒内形成夹带的气泡来实现。 一些实施方案包括在用气溶胶颗粒处理表面期间可以使用的装置。

公开(公告)号：US20100276656A1

公开(公告)日：2010-11-04

申请号：US12235244

申请日：2008-09-22

申请人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

发明人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683 ,  H01L51/0048 ,  Y10S977/712 ,  Y10S977/721 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/781

摘要： Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.

摘要翻译： 一些实施方案包括含有CNT束的装置。 起伏的形貌在碳纳米管之间和CNT之间的空间内延伸。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料直接在碳纳米管之上，其中材料是具有超过全局最大横向宽度的最小横截面赤道宽度的多个颗粒。 一些实施例包括在半导体衬底上形成多个交叉碳纳米管的方法。 CNT形成延伸跨过CNT并且在CNT之间的空间内的波状上部形貌。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料沉积在CNT上，其中材料被沉积成具有超过全局最大横向宽度的最小横截面赤道宽度的颗粒。

公开(公告)号：US20100025854A1

公开(公告)日：2010-02-04

申请号：US12185675

申请日：2008-08-04

申请人： Nishant Sinha

发明人： Nishant Sinha

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L28/40 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76882 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： Polishing systems and methods for removing conductive material (e.g., noble metals) from microelectronic substrates are disclosed herein. Several embodiments of the methods include forming an aperture in a substrate material, disposing a conductive material on the substrate material and in the aperture, and disposing a fill material on the conductive material. The fill material at least partially fills the aperture. The substrate material is then polished to remove at least a portion of the conductive material and the fill material external to the aperture during which the fill material substantially prevents the conductive material from smearing into the aperture during polishing the substrate material.

摘要翻译： 本文公开了用于从微电子衬底去除导电材料（例如贵金属）的抛光系统和方法。 所述方法的若干实施例包括在基底材料中形成孔，将导电材料设置在基底材料和孔中，并将填充材料设置在导电材料上。 填充材料至少部分地填充孔。 然后抛光衬底材料以去除导电材料和孔的外部的填充材料的至少一部分，在此期间，填充材料在抛光衬底材料期间基本上防止导电材料污染到孔中。

公开(公告)号：US20100013107A1

公开(公告)日：2010-01-21

申请号：US12174393

申请日：2008-07-16

申请人： Gurtej S. Sandhu ,  Nishant Sinha ,  John A. Smythe

发明人： Gurtej S. Sandhu ,  Nishant Sinha ,  John A. Smythe

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/5283 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/5329 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/105 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.

摘要翻译： 半导体器件包括至少一个集成电路层，至少一个导电迹线和与至少一个导电迹线的至少一部分相邻的绝缘材料。 至少一个互连结构延伸穿过所述至少一个导电迹线的一部分和所述绝缘材料的一部分，所述至少一个互连结构包括穿过所述至少一个导电迹线的横向截面尺寸，所述导电迹线与横向交叉不同 通过绝缘材料的尺寸。 还公开了形成包括至少一个互连结构的半导体器件的方法。