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11.发明授权Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method 有权具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法公开(公告)号：US07835418B2
公开(公告)日：2010-11-16
申请号：US11976123
申请日：2007-10-22
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0202 , H01S5/02284 , H01S5/028 , H01S5/0655 , H01S5/1203 , H01S5/1237 , H01S5/3412 , H01S2301/18
摘要： An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
摘要翻译： 有源层（18）形成在具有相互面对相反方向的一对小面（15A，15B）的半导体衬底之上。 在有源层上形成上折叠层（19），其折射率低于活性层的折射率。 衍射光栅（25）设置在波导区域（22）中的分布反馈区域的两侧的上部包层中，波导区域从半导体衬底的一个面延伸到另一个面。 端部区域（22B）被限定在波导区域的两端，并且分布式反馈区域（22A）设置在端部区域之间。 低折射率区域（26）设置在波导区域的每个端部区域的两侧的上部包层中，低折射率区域的折射率低于上部包层的折射率。
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12.发明申请Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method 有权具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法公开(公告)号：US20080144691A1
公开(公告)日：2008-06-19
申请号：US11976123
申请日：2007-10-22
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0202 , H01S5/02284 , H01S5/028 , H01S5/0655 , H01S5/1203 , H01S5/1237 , H01S5/3412 , H01S2301/18
摘要： An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
摘要翻译： 有源层（18）形成在具有相互面对相反方向的一对面（15A，15B）的半导体衬底上。 在有源层上形成上折叠层（19），其折射率低于活性层的折射率。 衍射光栅（25）设置在波导区域（22）中的分布反馈区域的两侧的上部包层中，波导区域从半导体衬底的一个面延伸到另一个面。 端部区域（22B）限定在波导区域的两端，分布反馈区域（22A）设置在端部区域之间。 低折射率区域（26）设置在波导区域的每个端部区域的两侧的上部包层中，低折射率区域的折射率低于上部包层的折射率。
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13.发明授权Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method 有权具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法公开(公告)号：US08891578B2
公开(公告)日：2014-11-18
申请号：US12923767
申请日：2010-10-07
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0202 , H01S5/02284 , H01S5/028 , H01S5/0655 , H01S5/1203 , H01S5/1237 , H01S5/3412 , H01S2301/18
摘要： An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
摘要翻译： 有源层（18）形成在具有相互面对相反方向的一对小面（15A，15B）的半导体衬底之上。 在有源层上形成上折叠层（19），其折射率低于活性层的折射率。 衍射光栅（25）设置在波导区域（22）中的分布反馈区域的两侧的上部包层中，波导区域从半导体衬底的一个面延伸到另一个面。 端部区域（22B）被限定在波导区域的两端，并且分布式反馈区域（22A）设置在端部区域之间。 低折射率区域（26）设置在波导区域的每个端部区域的两侧的上部包层中，低折射率区域的折射率低于上部包层的折射率。
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14.发明授权Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权具有p型量子点结构的有源层的光半导体器件及其制造方法公开(公告)号：US07573060B2
公开(公告)日：2009-08-11
申请号：US11976120
申请日：2007-10-22
IPC分类号： H01L29/06
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/06226 , H01S5/0655 , H01S5/3086 , H01S5/3412 , H01S5/34306 , H01S5/34353 , H01S2301/18
摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.
摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。
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15.发明申请SEMICONDUCTOR LIGHT-EMITTING DEVICE, OPTICAL MODULE, TRANSMITTER, AND OPTICAL COMMUNICATION SYSTEM 有权半导体发光器件，光学模块，发射器和光通信系统公开(公告)号：US20110006282A1
公开(公告)日：2011-01-13
申请号：US12877624
申请日：2010-09-08
申请人： Nobuaki Hatori , Tsuyoshi Yamamoto
发明人： Nobuaki Hatori , Tsuyoshi Yamamoto
IPC分类号： H01L33/06
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/12 , H01S5/1237 , H01S5/18311 , H01S5/3406 , H01S5/3407 , H01S5/3412 , H01S5/34313 , H01S5/34366
摘要： A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs.
摘要翻译： 半导体发光器件包括GaAs衬底; 以及设置在所述GaAs衬底上的有源层，所述有源层包括：与所述GaAs衬底晶格匹配的下阻挡层; 设置在下阻挡层上的量子点; 覆盖量子点的一侧的应变松弛层; 以及与所述量子点的顶部接触的上阻挡层，所述上阻挡层的与所述量子点的顶部接触的至少一部分与所述GaAs衬底晶格匹配，并且具有大于所述量子点的带隙的带隙 量子点并且小于GaAs的带隙。
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16.发明授权Semiconductor light-emitting device, optical module, transmitter, and optical communication system 有权半导体发光器件，光模块，发射器和光通信系统公开(公告)号：US08304757B2
公开(公告)日：2012-11-06
申请号：US12877624
申请日：2010-09-08
申请人： Nobuaki Hatori , Tsuyoshi Yamamoto
发明人： Nobuaki Hatori , Tsuyoshi Yamamoto
IPC分类号： H01L29/06 , H01L27/15 , H01L29/732 , H01L21/00
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/12 , H01S5/1237 , H01S5/18311 , H01S5/3406 , H01S5/3407 , H01S5/3412 , H01S5/34313 , H01S5/34366
摘要： A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs.
摘要翻译： 半导体发光器件包括GaAs衬底; 以及设置在所述GaAs衬底上的有源层，所述有源层包括：与所述GaAs衬底晶格匹配的下阻挡层; 设置在下阻挡层上的量子点; 覆盖量子点的一侧的应变松弛层; 以及与所述量子点的顶部接触的上阻挡层，与所述量子点的顶部接触的所述上阻挡层的至少一部分与所述GaAs衬底晶格匹配，并且具有大于所述量子点的带隙的带隙 量子点并且小于GaAs的带隙。
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公开(公告)号：US20050117200A1
公开(公告)日：2005-06-02
申请号：US11023369
申请日：2004-12-29
IPC分类号： G02B6/26
CPC分类号： B82Y20/00 , B82Y10/00 , G02F1/3556 , H01S3/169
摘要： A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.
摘要翻译： 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且通过采用用于控制光学四极波的控制装置对于具有光学四波混频的宽带宽信号光进行波长转换 系统包括信号光的光路和包括与待波长转换的信号光的波长对应的激发光的光路的光学系统。
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公开(公告)号：US07081983B2
公开(公告)日：2006-07-25
申请号：US11023369
申请日：2004-12-29
CPC分类号： B82Y20/00 , B82Y10/00 , G02F1/3556 , H01S3/169
摘要： A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.
摘要翻译： 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且通过采用用于控制光学的光学控制装置对光学四波混频进行宽带宽信号光的波长转换 系统包括信号光的光路和包括与待波长转换的信号光的波长对应的激发光的光路的光学系统。
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公开(公告)号：US06628691B2
公开(公告)日：2003-09-30
申请号：US09854469
申请日：2001-05-15
申请人： Nobuaki Hatori
发明人： Nobuaki Hatori
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/1228 , H01S5/3412
摘要： A laser diode includes: a substrate having a first conductive type; a first cladding layer having a first conductive type and formed on the substrate; an active layer including a plurality of quantum dots and formed on the first cladding layer; a diffraction grating having a Bragg wavelength of &lgr;g and formed on the active layer; a second cladding layer having a second conductive type and formed on the active layer; a first electrode for injecting carriers having a first polarity into the active layer via the substrate; and a second electrode for injecting carriers having a second polarity into the active layer via the second cladding layer. The diffraction grating has a pitch satisfies the equation: &Dgr;E≦1.1&Ggr;, where &Ggr; is the full width at half maximum (FWHM) of the gain spectrum of the active layer and &Dgr;E is an amount of shift of an energy corresponding to the Bragg wavelength &lgr;g from the center wavelength energy of the gain spectrum.
摘要翻译： 激光二极管包括：具有第一导电类型的衬底; 具有第一导电类型并形成在所述基板上的第一包层; 包括多个量子点并形成在第一包层上的有源层; 具有布拉格波长lambdg并形成在有源层上的衍射光栅; 具有第二导电类型并形成在所述有源层上的第二覆层; 用于经由衬底将具有第一极性的载流子注入有源层的第一电极; 以及第二电极，用于经由第二包层将具有第二极性的载流子注入有源层。 衍射光栅具有满足以下等式的等级：DeltaE <= 1.1Gamma，其中Gamma是有源层的增益谱的半峰全宽（FWHM），DeltaE是对应于布拉格的能量的偏移量 波长lambdg从增益光谱的中心波长能量。
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20.发明授权公开(公告)号：US08729526B2
公开(公告)日：2014-05-20
申请号：US12965588
申请日：2010-12-10
申请人： Nobuaki Hatori
发明人： Nobuaki Hatori
IPC分类号： H01L29/06
CPC分类号： H01S5/3412 , B82Y20/00 , H01S5/3404 , H01S5/3406 , H01S5/34313 , H01S5/50 , H01S2301/145
摘要： An optical semiconductor device includes a substrate; and an active layer disposed on the substrate, wherein the active layer includes a first barrier layer containing GaAs, a quantum dot layer, which is disposed on the first barrier layer, which includes a quantum dot containing InAs, which includes a side barrier layer which covers at least a part of the quantum dot and a side surface of the quantum dot, and having an elongation strain inherent therein, and a second barrier layer disposed on the quantum dot layer.
摘要翻译： 光学半导体器件包括衬底; 以及设置在所述基板上的有源层，其中所述有源层包括含有GaAs的第一势垒层，设置在所述第一势垒层上的量子点层，所述量子点层包括含有InAs的量子点，所述量子点包括侧阻挡层， 覆盖量子点的至少一部分和量子点的侧表面，并且其中固有的伸长应变和设置在量子点层上的第二阻挡层。
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