公开(公告)号：US11765484B1

公开(公告)日：2023-09-19

申请号：US17808896

申请日：2022-06-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Woon Il Choi ,  Yifei Du

IPC: H04N25/77 ,  H04N25/59 ,  H04N25/75 ,  H04N25/709

CPC classification number: H04N25/77 ,  H04N25/59 ,  H04N25/709 ,  H04N25/75

Abstract: A pixel circuit includes a transfer transistor is coupled between a photodiode and a floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region between a first metal electrode and a second metal electrode that is coupled to a first reset transistor and selectively coupled to the floating diffusion. A second reset transistor and a bias voltage source are coupled to the first metal electrode. During an idle period, the first reset transistor is configured to be on, the second reset transistor is configured to be off, and the bias voltage source is configured to provide a first bias voltage to the first metal electrode to reverse bias the LOFIC. The first bias voltage is less than a reset voltage provided from the reset voltage source.

公开(公告)号：US11348956B2

公开(公告)日：2022-05-31

申请号：US16717768

申请日：2019-12-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Woon Il Choi ,  Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355

Abstract: A pixel circuit includes a photodiode, a floating diffusion, and a conduction gate channel of a multi-gate transfer block disposed in a semiconductor material layer. The multi-gate transfer block is coupled to the photodiode, the floating diffusion, and an overflow capacitor. The multi-gate transfer block also includes first, second, and third gates that are disposed proximate to the single conduction gate channel region. The conduction gate channel is a single region shared among the first, second, and third gates. Overflow image charge generated in the photodiode leaks from the photodiode into the conduction gate channel to the overflow capacitor in response to the first gate, which is coupled between the photodiode and the conduction gate channel, receiving a first gate OFF signal and the second gate, which is coupled between the conduction gate channel and the overflow capacitor, receiving a second gate ON signal.

公开(公告)号：US12294799B2

公开(公告)日：2025-05-06

申请号：US18670698

申请日：2024-05-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Woon Il Choi

IPC: H04N25/75 ,  H04N25/59 ,  H10F39/00 ,  H10F39/18

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. A drain of the reset transistor is coupled to the bias voltage source. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region is disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to the drain of the reset transistor. The second metal electrode is coupled to a source of the reset transistor and selectively coupled to the floating diffusion.

公开(公告)号：US12177589B2

公开(公告)日：2024-12-24

申请号：US18154770

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bill Phan ,  Duli Mao ,  Yuanliang Liu ,  Heesoo Kang ,  Yifei Du ,  Woon Il Choi

IPC: H04N25/77 ,  H04N25/59

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A plurality of capacitor-switch pairs is coupled between the reset transistor and a bias voltage source. Each of the plurality of capacitor-switch pairs includes a lateral overflow integration capacitor (LOFIC) and a switch transistor coupled to the LOFIC.

公开(公告)号：US20240314464A1

公开(公告)日：2024-09-19

申请号：US18670698

申请日：2024-05-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Woon Il Choi

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/59

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/59

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. A drain of the reset transistor is coupled to the bias voltage source. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region is disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to the drain of the reset transistor. The second metal electrode is coupled to a source of the reset transistor and selectively coupled to the floating diffusion.

公开(公告)号：US20240244344A1

公开(公告)日：2024-07-18

申请号：US18154715

申请日：2023-01-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yifei Du ,  Zhiqiang Lin ,  Bill Phan ,  Woon Il Choi

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/771

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/771

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

公开(公告)号：US11356626B2

公开(公告)日：2022-06-07

申请号：US16855850

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Eiichi Funatsu ,  Woon Il Choi ,  Keiji Mabuchi ,  Chin Poh Pang ,  Qingfei Chen ,  Da Meng ,  Vivian Wang

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

公开(公告)号：US11335821B2

公开(公告)日：2022-05-17

申请号：US16863771

申请日：2020-04-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Mamoru Iesaka ,  Woon Il Choi ,  Sohei Manabe

IPC: H01L31/028 ,  H01L27/146

Abstract: Low noise silicon-germanium (SiGe) image sensor. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor substrate. The photodiodes of an individual pixel are configured to receive an incoming light through an illuminated surface of the semiconductor substrate. The semiconductor substrate includes a first layer of semiconductor material having silicon (Si); and a second layer of semiconductor material having silicon germanium (Si1-xGex). A concentration x of Ge changes gradually through at least a portion of thickness of the second layer. Each photodiode includes a first doped region extending through the first layer of semiconductor material and the second layer of semiconductor material; and a second doped region extending through the first layer of semiconductor material and the second layer of semiconductor material.

公开(公告)号：US20210337144A1

公开(公告)日：2021-10-28

申请号：US16855850

申请日：2020-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Eiichi Funatsu ,  Woon Il Choi ,  Keiji Mabuchi ,  Chin Poh Pang ,  Qingfei Chen ,  Da Meng ,  Vivian Wang

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An imaging device includes a photodiode array. The photodiodes include a first set of photodiodes configured as image sensing photodiodes and a second set of photodiodes configured as phase detection auto focus (PDAF) photodiodes. The PDAF photodiodes are arranged in at least pairs in neighboring columns and are interspersed among the image sensing photodiodes. Transfer transistors are coupled to corresponding photodiodes. The transfer transistors coupled to the image sensing photodiodes included in an active row of are controlled in response to a first transfer control signal or a second transfer control signal that control all of the image sensing photodiodes of the active row. A transfer transistor is coupled to one of a pair of the PDAF photodiodes of the active row. The first transfer transistor is controlled in response to a first PDAF control signal that is independent of the first or second transfer control signals.

公开(公告)号：US11044429B2

公开(公告)日：2021-06-22

申请号：US16522496

申请日：2019-07-25

Applicant: OmniVision Technologies, Inc.

Inventor： Woon Il Choi

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/378 ,  G01J1/44 ,  G01S17/36 ,  G01S17/89 ,  H04N5/353

Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material layer to accumulate image charge in response to light incident upon the photodiode. A charge collection gate is coupled to the photodiode. The charge collection gate is disposed over the photodiode to generate an inversion layer in the semiconductor material layer under the charge collection gate to collect the image charge from the photodiode. A first transfer gate is disposed proximate to the charge collection gate, wherein the first transfer gate is coupled to transfer the image charge from in the inversion layer in response to a first transfer signal.