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    Resonant-filter image sensor and associated fabrication method
    11.
    发明授权
    Resonant-filter image sensor and associated fabrication method 有权

    公开(公告)号：US10290670B2

    公开(公告)日：2019-05-14

    申请号：US15195926

    申请日：2016-06-28

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

    Hard mask as contact etch stop layer in image sensors
    12.
    发明授权
    Hard mask as contact etch stop layer in image sensors 有权
    硬掩模作为图像传感器中的接触蚀刻停止层

    公开(公告)号：US09564470B1

    公开(公告)日：2017-02-07

    申请号：US15272164

    申请日：2016-09-21

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

    IPC: H01L31/18 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    Abstract: A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of dielectric material is disposed between the layer of gate material and a semiconductor material, and the layer of gate material is disposed between the layer of hard mask material and the layer of dielectric material. The method also includes etching the layer of hard mask material and layer of gate material, and etching forms a transfer gate from the layer of gate material. An encapsulation material is deposited proximate to a surface of the semiconductor material. Trenches are etched in the encapsulation material. A first trench extends through the encapsulation material and the layer of dielectric material, and a second trench extends through the encapsulation material and the layer of hard mask material.

    Abstract translation: 图像传感器制造的方法包括形成介电材料层，栅极材料层和硬掩模材料层。 介电材料层设置在栅极材料层和半导体材料之间，并且栅极材料层设置在硬掩模材料层和电介质材料层之间。 该方法还包括蚀刻硬掩模材料层和栅极材料层，并且蚀刻从栅极材料层形成传输栅极。 封装材料沉积在半导体材料的表面附近。 在封装材料中蚀刻沟槽。 第一沟槽延伸穿过封装材料和介电材料层，并且第二沟槽延伸穿过封装材料和硬掩模材料层。

    IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY
    13.
    发明申请
    IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY 有权
    具有增强量子效率的图像传感器

    公开(公告)号：US20160227147A1

    公开(公告)日：2016-08-04

    申请号：US14612961

    申请日：2015-02-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

    IPC: H04N5/3745 ,  H04N5/378

    CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

    Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

    DOPANT CONFIGURATION IN IMAGE SENSOR PIXELS
    14.
    发明申请
    DOPANT CONFIGURATION IN IMAGE SENSOR PIXELS 审中-公开
    图像传感器像素中的DOPANT配置

    公开(公告)号：US20160071892A1

    公开(公告)日：2016-03-10

    申请号：US14478931

    申请日：2014-09-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Philippe Matagne ,  Chih-Wei Hsiung ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

    CPC classification number: H01L27/1461 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An image sensor pixel including a photodiode includes a first dopant region disposed within a semiconductor layer and a second dopant region disposed above the first dopant region and within the semiconductor layer. The second dopant region contacts the first dopant region and the second dopant region is of an opposite majority charge carrier type as the first dopant region. A third dopant region is disposed above the first dopant region and within the semiconductor layer. The third dopant region is of a same majority charge carrier type as the second dopant region but has a greater concentration of free charge carriers than the second dopant region. A transfer gate is positioned to transfer photogenerated charge from the photodiode. The second dopant region extends closer to an edge of the transfer gate than the third dopant region.

    Abstract translation: 包括光电二极管的图像传感器像素包括设置在半导体层内的第一掺杂区和设置在第一掺杂区之上和半导体层内的第二掺杂区。 第二掺杂剂区域接触第一掺杂剂区域，并且第二掺杂剂区域具有与第一掺杂剂区域相反的多数电荷载流子类型。 第三掺杂剂区域设置在第一掺杂剂区域之上和半导体层内。 第三掺杂剂区域具有与第二掺杂剂区域相同的多数电荷载流子类型，但是具有比第二掺杂剂区域更大的自由电荷载流子浓度。 转移门被定位成从光电二极管转移光生电荷。 第二掺杂剂区域比第三掺杂剂区域更靠近传输栅极的边缘延伸。

    VERTICAL OVERFLOW DRAIN COMBINED WITH VERTICAL TRANSISTOR
    18.
    发明申请
    VERTICAL OVERFLOW DRAIN COMBINED WITH VERTICAL TRANSISTOR 审中-公开

    公开(公告)号：US20190355778A1

    公开(公告)日：2019-11-21

    申请号：US15984136

    申请日：2018-05-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/359

    Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
    19.
    发明申请
    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD 审中-公开

    公开(公告)号：US20190181173A1

    公开(公告)日：2019-06-13

    申请号：US16276561

    申请日：2019-02-14

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

    Biased deep trench isolation
    20.
    发明授权
    Biased deep trench isolation 有权

    公开(公告)号：US10269850B2

    公开(公告)日：2019-04-23

    申请号：US15717047

    申请日：2017-09-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

    IPC: H01L27/146

    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

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