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    METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP
    11.
    发明申请
    METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开

    公开(公告)号：US20200066953A1

    公开(公告)日：2020-02-27

    申请号：US16348609

    申请日：2018-02-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke

    IPC: H01L33/62 ,  H01L33/00 ,  H01L25/075 ,  H01L33/40 ,  H01L33/20

    Abstract: A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.

    Optoelectronic Semiconductor Chip
    12.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开

    公开(公告)号：US20190259911A1

    公开(公告)日：2019-08-22

    申请号：US16315463

    申请日：2017-07-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Roland Zeisel ,  Michael Binder ,  Jens Ebbecke ,  Tobias Meyer

    IPC: H01L33/22 ,  H01L33/06 ,  H01L33/02

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

    OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE SAME
    14.
    发明申请
    OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE SAME 有权

    公开(公告)号：US20230023759A1

    公开(公告)日：2023-01-26

    申请号：US17777873

    申请日：2020-11-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke

    IPC: H01L33/06 ,  H01L33/24

    Abstract: An optoelectronic component (10) is specified, comprising a semiconductor body (6) with an active region (4) suitable for emission of radiation and comprising a quantum well structure, wherein the quantum well structure comprises at least one quantum well layer (41) and barrier layers (42), a first electrical contact (1) and a second electrical contact (2), wherein the active region (4) comprises at least one intermixed region (44) and at least one non-intermixed region (43).
    The at least one quantum well layer (41) and the barrier layers (42) are at least partially intermixed in the intermixed region (44), such that the intermixed region (44) comprises a larger electronic bandgap than the at least one quantum well layer (41) in the non-intermixed region (43). The first electrical contact (1) is a metal contact arranged on a radiation exit surface of the semiconductor body (6), wherein the intermixed region (44) is arranged below the first contact (1) in the vertical direction. Further, a method for producing the optoelectronic component (10) is specified.

    Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device
    15.
    发明申请
    Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device 有权

    公开(公告)号：US20210234068A1

    公开(公告)日：2021-07-29

    申请号：US17229051

    申请日：2021-04-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Harald König ,  Jens Ebbecke ,  Alfred Lell ,  Sven Gerhard ,  Clemens Vierheilig

    IPC: H01L33/08 ,  H01S5/02 ,  H01L33/26 ,  H01L33/00

    Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

    Method for the Self-Adjusted Exposure of Side Surfaces of a Semiconductor Body
    17.
    发明申请
    Method for the Self-Adjusted Exposure of Side Surfaces of a Semiconductor Body 审中-公开

    公开(公告)号：US20190386172A1

    公开(公告)日：2019-12-19

    申请号：US16485400

    申请日：2018-02-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke ,  Sebastian Taeger

    IPC: H01L33/00 ,  H01L33/44 ,  H01L33/20 ,  H01L33/38

    Abstract: A method for exposing side surfaces of a semiconductor body is disclosed. In an embodiment a method includes providing the semiconductor body having a laterally extending first main surface, forming a plurality of vertical side surfaces by partially removing material of the semiconductor body and thereby removing the first main surface in places, wherein each of the side surfaces forms an angle (α) between 110° and 160° inclusive with the remaining first main surface, applying a protective layer onto the semiconductor body so that, in a plan view, the protective layer completely covers the remaining first main surface and the obliquely formed side surfaces and partially removing the protective layer so that the protective layer is removed in regions on the obliquely formed side surfaces because of an inclination and remains at least partially preserved in regions on the remaining first main surface during a common process operation.

    Semiconductor layer sequence and method of producing the same
    18.
    发明授权
    Semiconductor layer sequence and method of producing the same 有权

    公开(公告)号：US09653646B2

    公开(公告)日：2017-05-16

    申请号：US15034565

    申请日：2014-11-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

    IPC: H01L33/02 ,  H01L33/08 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30

    CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

    Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

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