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    Split Exit Pupil Heads-Up Display Systems and Methods
    11.
    发明申请
    Split Exit Pupil Heads-Up Display Systems and Methods 有权
    分离出口瞳孔抬头显示系统和方法

    公开(公告)号：US20160062113A1

    公开(公告)日：2016-03-03

    申请号：US14580009

    申请日：2014-12-22

    Applicant: OSTENDO TECHNOLOGIES, INC.

    Inventor： Hussein S. El-Ghoroury ,  Jingbo Cai ,  Chih-Li Chuang ,  Marty Maiers

    IPC: G02B27/01 ,  G09G3/20 ,  G09G3/34 ,  G06T3/00

    CPC classification number: G02B27/0101 ,  G02B5/10 ,  G02B27/0081 ,  G02B27/1066 ,  G02B2027/011 ,  G02B2027/0112 ,  G02B2027/0123 ,  G02B2027/0125 ,  G02B2027/014 ,  G02B2027/0147 ,  G06T3/0012 ,  G06T3/0093 ,  G09G3/2003 ,  G09G3/2096 ,  G09G3/3406 ,  G09G3/3413 ,  G09G2320/0626 ,  G09G2360/14 ,  G09G2360/144 ,  G09G2380/10

    Abstract: Split exit pupil (or split eye-box) heads-up display (HUD) systems and methods are described. The described HUD system methods make use of a split exit pupil design method that enables a modular HUD system and allows the HUD system viewing eye-box size to be tailored while reducing the overall HUD volumetric aspects. A HUD module utilizes a high brightness small size micro-pixel imager to generate a HUD virtual image with a given viewing eye-box segment size. When integrated together into a HUD system, a multiplicity of such HUD modules displaying the same image would enable such an integrated HUD system to have an eye-box size that is substantially larger than the eye-box size of a HUD module. The resultant integrated HUD system volume is substantially volumetrically smaller than a HUD system that uses a single larger imager. Furthermore, the integrated HUD system can be comprised of a multiplicity of HUD modules to scale the eye-box size to match the intended application while maintaining a given desired overall HUD system brightness.

    Abstract translation: 描述分离出口光瞳（或分裂眼箱）平视显示器（HUD）系统和方法。 所描述的HUD系统方法利用分离出口光瞳设计方法，使得能够实现模块化HUD系统，并且允许HUD系统在观察眼箱尺寸的同时，同时降低整体HUD容积方面。 HUD模块利用高亮度小尺寸微像素成像器来产生具有给定观察眼框段尺寸的HUD虚像。 当集成到HUD系统中时，显示相同图像的多个这样的HUD模块将使得这种集成HUD系统具有比HUD模块的眼箱大小更大的眼箱尺寸。 所得到的集成HUD系统体积基本上比使用单个较大成像器的HUD系统体积小。 此外，集成HUD系统可以由多个HUD模块组成，以便在保持给定的期望的总体HUD系统亮度的同时缩小眼箱大小以匹配预期应用。

    III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
    15.
    发明授权
    III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same 有权

    公开(公告)号：US10396240B2

    公开(公告)日：2019-08-27

    申请号：US15287384

    申请日：2016-10-06

    Applicant: Ostendo Technologies, Inc.

    Inventor： Yea-Chuan Milton Yeh ,  Hussein S. El-Ghoroury ,  Xing Li ,  Jyh-Chia Chen ,  Chih-Li Chuang

    IPC: H01L29/15 ,  H01L31/0256 ,  H01L33/06 ,  H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L33/00 ,  H01L33/32

    Abstract: A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.

    III-Nitride Semiconductor Light Emitting Device Having Amber-to-Red Light Emission (>600 nm) and a Method for Making Same
    17.
    发明申请
    III-Nitride Semiconductor Light Emitting Device Having Amber-to-Red Light Emission (>600 nm) and a Method for Making Same 审中-公开

    公开(公告)号：US20170104128A1

    公开(公告)日：2017-04-13

    申请号：US15287384

    申请日：2016-10-06

    Applicant: Ostendo Technologies, Inc.

    Inventor： Yea-Chuan Milton Yeh ,  Hussein S. El-Ghoroury ,  Xing Li ,  Jyh-Chia Chen ,  Chih-Li Chuang

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32

    Abstract: A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.

    Light Emitting Structures with Multiple Uniformly Populated Active Layers
    18.
    发明申请
    Light Emitting Structures with Multiple Uniformly Populated Active Layers 审中-公开
    具有多个均匀填充的有源层的发光结构

    公开(公告)号：US20160359086A1

    公开(公告)日：2016-12-08

    申请号：US15173517

    申请日：2016-06-03

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

    IPC: H01L33/14 ,  H01S5/343 ,  H01S5/34 ,  H01S5/20 ,  H01L33/06 ,  H01L33/30

    CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

    Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

    Abstract translation: 本文公开了用于掺入中间载体阻挡层的半导体发光器件（LED）的多层光学活性区域，所述中间载体阻挡层具有用于组合物和掺杂水平的设计参数，以提供对横跨载流子阻挡层的载流子注入分布的有效控制 活性区域以实现期望的器件注入特性。 本文中讨论的实施例的示例包括：在可见光范围内操作的全部覆盖RGB色域的多量子阱可变颜色LED，在可见光范围内工作的多量子阱可变颜色LED，具有扩展 超出标准RGB色域的色域，具有可变色温的多量子阱发光白光LED，以及具有均匀填充的有源层的多量子阱LED。

    Non-telecentric emissive micro-pixel array light modulators and methods for making the same
    19.
    发明授权
    Non-telecentric emissive micro-pixel array light modulators and methods for making the same 有权

    公开(公告)号：US11598954B2

    公开(公告)日：2023-03-07

    申请号：US16775878

    申请日：2020-01-29

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Mahesh Pitchumani ,  Zahir Alpaslan ,  Chih-Li Chuang ,  Dale McNeill

    IPC: H04N13/30 ,  G02B27/00 ,  H04N13/398 ,  G02B30/10

    Abstract: Emissive micro-pixel spatial light modulators with non-telecentric emission are introduced. The individual light emission from each multi-color micro-scale emissive pixel is directionally modulated in a unique direction to enable application-specific non-telecentric emission pattern from the micro-pixel array of the emissive spatial light modulator. Design methods for directionally modulating the light emission of the individual micro-pixels using micro-pixel level optics are described. Monolithic wafer level optics methods for fabricating the micro-pixel level optics are also described. An emissive multi-color micro-pixel spatial light modulator with non-telecentric emission is used to exemplify the methods and possible applications of the present invention: ultra-compact image projector, minimal cross-talk 3D light field display, multi-view 2D display, and directionally modulated waveguide optics for see-through near-eye displays.

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