Abstract:
An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.
Abstract:
A solid material includes a three-dimensional structure including recesses and a solid portion formed between the recesses, the three-dimensional structure adjusting a thermal conductivity of the solid material by interaction with phonons, wherein a minimum size of the solid portion between the recesses adjacent to each other in plan view of the three-dimensional structure is smaller than or equal to 100 nm, and the solid portion includes a region with a Young's modulus being smaller than or equal to 80% of a Young's modulus of a reference sample that is fabricated by using the same type of material as a material of the solid portion without forming any recesses.
Abstract:
A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.
Abstract:
A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.
Abstract:
A liquid treatment apparatus includes a dielectric tube through which a liquid flows, a first electrode, at least one end of which is disposed in the dielectric tube, a second electrode, at least one end of which is disposed in the dielectric tube, and a power supply for applying a voltage between the first electrode and the second electrode, wherein the dielectric tube has a protrusion projecting outwardly from an inside of the dielectric tube, an inner wall face of the protrusion facing the first electrode.
Abstract:
A liquid treatment apparatus for treating water to be treated, according to the present disclosure, includes a treatment tank, a dielectric partition wall dividing inside of the treatment tank into a first space in which the water to be treated is injected, and a second space in which an electrolytic solution is filled, a first electrode at least part of which is arranged in the first space of the treatment tank, a second electrode at least part of which is arranged in the second space of the treatment tank, and a power supply that applies a high-frequency AC voltage between the first electrode and the second electrode.
Abstract:
An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.
Abstract:
A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.
Abstract:
A liquid treatment method according to an aspect of the present disclosure comprises: starting application of a power between a pair of electrodes to generate plasma, which causes active species to be produced in a liquid; measuring the hydrogen ion concentration in the liquid while the plasma is generated; measuring a time elapsed after the starting the application of the power; and stopping the application of the power when a value calculated by (a) multiplying the hydrogen ion concentration by the elapsed time or (b) integrating the hydrogen ion concentration with respect to the elapsed time is larger than a first threshold.
Abstract:
A liquid treatment apparatus includes a dielectric tube through which water to be treated flows, a first electrode at least a part of which is disposed in the dielectric tube, a second electrode at least a part of which is disposed in the dielectric tube at a position upstream of the first electrode, a gas supplier operative to generate a bubble by supplying a gas into the water to be treated, and a power supply operative to apply a voltage between the first electrode and the second electrode in a state in which the bubble covers a conductor-exposed portion of the first electrode.