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公开(公告)号：US20220336745A1
公开(公告)日：2022-10-20
申请号：US17809026
申请日：2022-06-27
Inventor： NOZOMU MATSUKAWA , KATSUYA NOZAWA , SHINICHI MACHIDA , SANSHIRO SHISHIDO
Abstract: An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.
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12.发明申请公开(公告)号：US20180227510A1
公开(公告)日：2018-08-09
申请号：US15873190
申请日：2018-01-17
Inventor： SHINICHI MACHIDA , MASASHI MURAKAMI , TAKEYOSHI TOKUHARA , MASAAKI YANAGIDA , SANSHIRO SHISHIDO , MANABU NAKATA , MASUMI IZUCHI
CPC classification number: H04N5/332 , H01L27/307 , H04N5/374 , H04N5/378 , H04N9/04553 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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13.发明公开公开(公告)号：US20240065013A1
公开(公告)日：2024-02-22
申请号：US18500534
申请日：2023-11-02
Inventor： NOZOMU MATSUKAWA , SHINICHI MACHIDA
CPC classification number: H10K39/32 , H10K30/35 , H10K30/353 , H10K30/87 , H10K85/221 , B82Y20/00
Abstract: A photoelectric conversion element includes a first electrode, a second electrode facing the first electrode, and a photosensitive layer between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode transmits light. The photosensitive layer contains a quantum dot and a semiconducting carbon nanotube that absorbs the light. The quantum dot has a higher absolute value of electron affinity than the semiconducting carbon nanotube.
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公开(公告)号：US20230326253A1
公开(公告)日：2023-10-12
申请号：US18327931
申请日：2023-06-02
Inventor： SANSHIRO SHISHIDO , SHINICHI MACHIDA
Abstract: A biometric authentication system includes a first image capturer that captures a visible light image that is imaged by picking up first light reflected from a skin portion of a subject that is irradiated with visible light; a second image capturer that captures a first infrared image that is imaged by picking up second light that is reflected from the skin portion irradiated with first infrared light and that has a wavelength region including a first wavelength; and a determiner that determines, in accordance with a result of comparing the visible light image with the first infrared image, whether the subject is a living body and outputs a determination result.
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公开(公告)号：US20220216440A1
公开(公告)日：2022-07-07
申请号：US17700941
申请日：2022-03-22
Inventor： SHINICHI MACHIDA , KATSUYA NOZAWA , SANSHIRO SHISHIDO
Abstract: A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.
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Patent Agency Ranking
公开(公告)号：US20210265521A1
公开(公告)日：2021-08-26
申请号：US17238250
申请日：2021-04-23
Inventor： SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO
IPC: H01L31/112 , H01L31/0352
Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.
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公开(公告)号：US20180294316A1
公开(公告)日：2018-10-11
申请号：US15938374
申请日：2018-03-28
Inventor： TAKEYOSHI TOKUHARA , SHINICHI MACHIDA
CPC classification number: H01L27/307 , H01L51/0046 , H01L51/0059 , H01L51/0072 , H01L51/0073 , H01L51/0078 , H01L51/0094 , H01L51/4273 , H01L51/442 , H01L51/5004 , H01L2251/308 , H04N5/353 , H04N5/374 , Y02E10/549
Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.
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公开(公告)号：US20240381677A1
公开(公告)日：2024-11-14
申请号：US18782984
申请日：2024-07-24
Inventor： SHINICHI MACHIDA , SANSHIRO SHISHIDO , NOZOMU MATSUKAWA
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes produced in the photoelectric conversion layer as signal charges, and a second electrode that collects electrons produced in the photoelectric conversion layer. The photoelectric conversion layer includes three or more layered quantum dot layers, each containing quantum dots and surface-modifying ligands. The band gap energy of the quantum dot layer closer to the first electrode is lower than the band gap energy of the quantum dot layer closer to the second electrode in at least one combination of two adjacent quantum dot layers. At the interface between each of the three or more quantum dot layers and an adjacent quantum dot layer, at least one selected from the group consisting of Expression (1) and Expression (2) below is satisfied: E i + 1 CBM - E i CBM ≥ 0 ( 1 ) E i + 1 VBM - E i VBM ≥ 0. ( 2 )
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公开(公告)号：US20230292017A1
公开(公告)日：2023-09-14
申请号：US18317356
申请日：2023-05-15
Inventor： MAKOTO SHOUHO , SHINICHI MACHIDA
IPC: H04N25/532 , H04N25/77 , H04N25/709
CPC classification number: H04N25/532 , H04N25/77 , H04N25/709
Abstract: An imaging device includes a photoelectric conversion layer, a counter electrode, a first electrode, a second electrode, a first transfer gate, a second transfer gate, a first amplification transistor, and a second amplification transistor. The first transistor outputs a signal corresponding to the potential of the first gate in a first readout period in which the first transfer gate suppresses transfer of signal charges. The first readout period includes a first period in which the second transfer gate allows transfer of signal charges. The second transistor outputs a signal corresponding to the potential of the second gate in a second readout period in which the second transfer gate suppresses transfer of signal charges. The second readout period includes a second period in which the first transfer gate allows transfer of signal charges.
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公开(公告)号：US20230026531A1
公开(公告)日：2023-01-26
申请号：US17932483
申请日：2022-09-15
Inventor： SHINICHI MACHIDA
Abstract: An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
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