Integrated circuit on flexible substrate manufacturing process

    公开(公告)号:US11990484B2

    公开(公告)日:2024-05-21

    申请号:US17874875

    申请日:2022-07-27

    CPC classification number: H01L27/1262 H01L21/78 H01L27/1218 H01L27/1266

    Abstract: The present invention provides processes for manufacturing a plurality of discrete integrated circuits (ICs) on a carrier, the process comprising the steps of: providing a carrier for a flexible substrate; depositing a flexible substrate of uniform thickness on said carrier; removing at least a portion of the thickness of the flexible substrate from at least a portion of the IC connecting areas to form channels in the flexible substrate and a plurality of IC substrate units spaced apart from one another on the carrier by said channels; forming an integrated circuit on at least one of the IC substrate units.

    Schottky diode
    13.
    发明授权

    公开(公告)号:US11637210B2

    公开(公告)日:2023-04-25

    申请号:US16771400

    申请日:2018-12-11

    Abstract: A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

    Integrated circuit on flexible substrate manufacturing process

    公开(公告)号:US11462575B2

    公开(公告)日:2022-10-04

    申请号:US16964513

    申请日:2019-01-30

    Abstract: The present invention provides processes for manufacturing a plurality of discrete integrated circuits (ICs) on a carrier, the process comprising the steps of: providing a carrier for a flexible substrate; depositing a flexible substrate of uniform thickness on said carrier; removing at least a portion of the thickness of the flexible substrate from at least a portion of the IC connecting areas to form channels in the flexible substrate and a plurality of IC substrate units spaced apart from one another on the carrier by said channels; forming an integrated circuit on at least one of the IC substrate units.

    Methods for manufacturing a plurality of electronic circuits

    公开(公告)号:US11406023B2

    公开(公告)日:2022-08-02

    申请号:US16643642

    申请日:2018-08-16

    Abstract: The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising: providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions; providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs; dispensing an adhesive onto the first structure and/or onto the flexible ICs; transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit, providing a heated surface and an opposing surface together having a gap therebetween, transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.

    Methods of manufacturing electronic structures

    公开(公告)号:US11004875B2

    公开(公告)日:2021-05-11

    申请号:US16497636

    申请日:2018-03-27

    Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.

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