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69 条记录 (耗时 0.031 秒)

    Gate drivers and voltage regulators for gallium nitride devices and integrated circuits
    12.
    发明授权
    Gate drivers and voltage regulators for gallium nitride devices and integrated circuits 有权

    公开(公告)号：US10686436B2

    公开(公告)日：2020-06-16

    申请号：US16454078

    申请日：2019-06-27

    申请人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

    发明人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

    IPC分类号： H03F1/30 ,  H03K17/06 ,  H01L29/20 ,  H01L29/778 ,  H01L27/06 ,  H02M1/08 ,  H03K17/081 ,  H01L27/02 ,  H02M3/335

    摘要： Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

    Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits
    13.
    发明申请
    Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits 审中-公开

    公开(公告)号：US20200007091A1

    公开(公告)日：2020-01-02

    申请号：US16449356

    申请日：2019-06-22

    申请人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

    发明人： Zhanming Li ,  Yue Fu ,  Yan-Fei Liu

    IPC分类号： H03F1/52 ,  H01L29/20 ,  H01L27/02 ,  H01L27/06 ,  H01L21/8252 ,  H01L29/778 ,  H03F3/213

    摘要： Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

    Hybrid modulation strategy for multilevel inverters
    16.
    发明授权
    Hybrid modulation strategy for multilevel inverters 有权

    公开(公告)号：US09973108B2

    公开(公告)日：2018-05-15

    申请号：US15662044

    申请日：2017-07-27

    申请人： Hongliang Wang ,  Yan-Fei Liu

    发明人： Hongliang Wang ,  Yan-Fei Liu

    IPC分类号： H02M1/08 ,  H02M7/217 ,  H02M7/219 ,  H02M7/483 ,  H02M7/487 ,  H02M7/5387

    CPC分类号： H02M7/487 ,  H02J3/383 ,  H02M1/08 ,  H02M7/217 ,  H02M7/219 ,  H02M7/483 ,  H02M7/5387

    摘要： Hybrid modulation strategies are provided for single phase and three phase inverter topologies. According to hybrid modulation strategy embodiments, one line frequency period is divided into two operation modes based on the polarities of output voltage and output current. When polarities of the output voltage and output current are the same, a nominal voltage level modulation is used to generate the output voltage. When polarities of the output voltage and output current are opposite, a lower voltage level modulation is used to generate the output voltage. In one embodiment, a nominal voltage level modulation is five voltage level modulation, and a lower voltage level modulation is three or two voltage level modulation. Embodiments allow inverters to be constructed with fewer switches, and improve performance of multilevel inverters. The hybrid modulation strategies may be implemented in multilevel inverters such as active neutral point clamped (ANPC) and neutral point clamped (NPC) inverters.

    Dual frequency control of buck-boost regulator with a pass through band
    17.
    发明授权
    Dual frequency control of buck-boost regulator with a pass through band 有权
    具有通过频带的降压 - 升压调节器的双频率控制

    公开(公告)号：US09122287B2

    公开(公告)日：2015-09-01

    申请号：US13481073

    申请日：2012-05-25

    申请人： Hengchun Mao ,  Yan-Fei Liu

    发明人： Hengchun Mao ,  Yan-Fei Liu

    IPC分类号： G05F1/24 ,  G06F1/00 ,  G05F3/02 ,  G06F1/26

    CPC分类号： G05F3/02 ,  G06F1/26

    摘要： Dual frequency control of first and second pairs of switches of a buck-boost regulator with pass through band is disclosed. In buck and boost modes respectively a first pair of the switches is operated at high frequency and a second pair of the switches is operated at low frequency. In pass through mode, both pairs of switches are operated at low frequency. Dual frequency control and operation of the pairs of switches enables current sharing between positive and negative power leads in buck, boost and pass-through modes.

    摘要翻译： 公开了具有通过带的降压 - 升压调节器的第一和第二对开关的双频率控制。 在降压和升压模式下，第一对开关以高频工作，第二对开关以低频工作。 在通过模式下，两对开关都以低频工作。 两对开关的双频率控制和操作可以在降压，升压和直通模式下实现正负电源线之间的电流共享。

    Methods and Circuits for Improving the Dynamic Response of a DC-DC Converter
    18.
    发明申请
    Methods and Circuits for Improving the Dynamic Response of a DC-DC Converter 审中-公开
    用于改善DC-DC转换器的动态响应的方法和电路

    公开(公告)号：US20130093403A1

    公开(公告)日：2013-04-18

    申请号：US13608447

    申请日：2012-09-10

    申请人： Liang Jia ,  Yan-Fei Liu

    发明人： Liang Jia ,  Yan-Fei Liu

    IPC分类号： G05F1/614

    CPC分类号： G05F1/614 ,  H02M3/1588 ,  H02M2001/0003 ,  Y02B70/1466

    摘要： Methods and circuits are described herein which may be used to improve the unloading transient response of a DC-DC converter. In some embodiments the transient response may be improved by improving the way MOSFET switches in the buck converter are controlled at the point in time when a current transient is detected, and subsequently during the transient, in such a way that the impact of the current transient is mitigated. In other embodiments an auxiliary current source is used to provide rapid transient response required by the overall power converter, leaving the main portion of the DC-DC converter to provide long term stability.

    摘要翻译： 本文描述了可用于改善DC-DC转换器的卸载瞬态响应的方法和电路。 在一些实施例中，可以通过改进降压转换器中的MOSFET开关在检测到电流瞬变的时间点以及随后在瞬态期间被控制的方式来改善瞬态响应，使得电流瞬变的影响 被减轻 在其他实施例中，辅助电流源用于提供整个功率转换器所需的快速瞬态响应，使得DC-DC转换器的主要部分能够提供长期的稳定性。

    Signal and power transformer coupling arrangements
    19.
    发明授权
    Signal and power transformer coupling arrangements 有权
    信号和电源变压器耦合布置

    公开(公告)号：US06911746B2

    公开(公告)日：2005-06-28

    申请号：US10428103

    申请日：2003-05-02

    申请人： Raymond Kenneth Orr ,  Yan-Fei Liu ,  David Alan Brown ,  Rajko Duvnjak

    发明人： Raymond Kenneth Orr ,  Yan-Fei Liu ,  David Alan Brown ,  Rajko Duvnjak

    IPC分类号： G08C17/04 ,  H03K3/00

    CPC分类号： G08C17/04

    摘要： An isolating coupling arrangement couples signals in both directions via a transformer between first and second (or more) units each having differential signal transmit buffers and receivers. A diode bridge and capacitor produce an isolated power supply voltage for the second unit from signals coupled from the first unit via the transformer. The diode bridge can use intrinsic diodes of CMOS output circuits of the transmit buffers, which can be controlled synchronously using a phase locked loop responsive to signals coupled from the first unit via the transformer. A supply voltage for the first unit can be increased to compensate for voltage drops of the diode bridge on start-up prior to the synchronous operation. A resistor in parallel with a diode of the bridge provides an asymmetrical load to create a DC component of transformer magnetizing current to eliminate oscillations during signal gaps.

    摘要翻译： 隔离耦合装置通过第一和第二（或多个）单元之间的变压器在两个方向上耦合信号，每个单元具有差分信号发送缓冲器和接收器。 二极管桥和电容器通过变压器从第一单元耦合的信号产生用于第二单元的隔离电源电压。 二极管桥可以使用发射缓冲器的CMOS输出电路的本征二极管，其可以使用响应于经由变压器耦合自第一单元的信号的锁相环来同步地被控制。 可以增加第一单元的电源电压以补偿在同步操作之前启动时二极管桥的电压降。 与桥式二极管并联的电阻器提供非对称负载，以产生变压器磁化电流的直流分量，以消除信号间隙期间的振荡。