公开(公告)号：US20170025558A1

公开(公告)日：2017-01-26

申请号：US15165103

申请日：2016-05-26

Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

Inventor： Hirofumi YOSHIKAWA ,  Makoto IZUMI ,  Yasuhiko ARAKAWA

IPC: H01L31/0352 ,  H01L31/054 ,  H01L31/0232 ,  H01L31/109 ,  H01L31/072 ,  H01L31/055

CPC classification number: H01L31/055 ,  H01L31/035218 ,  Y02E10/52

Abstract: A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.

Abstract translation: 光电转换元件包括交替堆叠的包括势垒子层和量子子层（量子点子层）的超晶格半导体层，并且还包括含有转换入射光波长的波长转换材料的波长转换层。 波长转换层将入射光转换成具有对应于从超晶格半导体层的导带的量子水平到导带的连续层的光学跃迁的波长的光。

公开(公告)号：US20170200841A1

公开(公告)日：2017-07-13

申请号：US15378088

申请日：2016-12-14

Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

Inventor： Hirofumi YOSHIKAWA ,  Makoto IZUMI ,  Yasuhiko ARAKAWA ,  Katsuyuki WATANABE

IPC: H01L31/0352 ,  H01L31/109 ,  H01L31/0735 ,  H01L31/0304

CPC classification number: H01L31/035236 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/0735 ,  H01L31/077 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/544

Abstract: A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction band. The photoelectric conversion element includes a superlattice semiconductor layer in which a barrier layer and a quantum dot layer as a quantum layer are alternately and repeatedly stacked. The barrier layer includes an indirect transition semiconductor material, and the quantum dot layer has a nano-structure including a direct transition semiconductor material. The indirect transition semiconductor material constituting the barrier layer has a bandgap of more than 1.42 eV at room temperature.

公开(公告)号：US20150364628A1

公开(公告)日：2015-12-17

申请号：US14763259

申请日：2013-12-18

Applicant: SHARP KABUSHIKI KAISHA ,  THE UNIVERSITY OF TOKYO

Inventor： Tomohiro NOZAWA ,  Yasuhiko ARAKAWA

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/035263 ,  Y02E10/544

Abstract: A photoelectric conversion element according to the present invention includes a photoelectric conversion layer. The photoelectric conversion layer includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer which is interposed between the p-type semiconductor layer and the n-type semiconductor layer. The superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum layers are stacked alternately and repeatedly, and is provided so as to form an intermediate energy band between an upper end of a valence band of the barrier layer and a lower end of a conduction band of the barrier layer. The intermediate energy band is formed from a region of the superlattice semiconductor layer, which is near to the p-type semiconductor layer, to a region of the superlattice semiconductor layer, which is near to the n-type semiconductor layer, and the intermediate energy band has a region having a wide band width and a region having a narrow band width.

Abstract translation: 根据本发明的光电转换元件包括光电转换层。 光电转换层包括介于p型半导体层和n型半导体层之间的p型半导体层，n型半导体层和超晶格半导体层。 超晶格半导体层具有超晶格结构，其中势垒层和量子层交替重复堆叠，并且被设置为在阻挡层的价带的上端和下部的阻挡层的下端之间形成中间能带 阻挡层的导带。 中间能带由位于p型半导体层附近的超晶格半导体层的区域形成于靠近n型半导体层的超晶格半导体层的区域，中间能量 带具有宽带宽的区域和窄带宽的区域。

公开(公告)号：US20190301944A1

公开(公告)日：2019-10-03

申请号：US16367293

申请日：2019-03-28

Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

Inventor： Takahiro DOE ,  Hirofumi YOSHIKAWA ,  Tazuko KITAZAWA ,  Yasuhiko ARAKAWA

IPC: G01J5/10

Abstract: An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSP1 for high sensitivity (for low temperature use) and sensitivity spectrum SSP2 for low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSP1 and temperature data for the infrared light detected using sensitivity spectrum SSP2, in order to output a temperature distribution in a measurement region.

公开(公告)号：US20170201071A1

公开(公告)日：2017-07-13

申请号：US15314630

申请日：2015-05-07

Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

Inventor： Teruhisa KOTANI ,  Yasuhiko ARAKAWA

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/3401 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2031 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3402 ,  H01S5/3407 ,  H01S5/34333

Abstract: A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked. The vibrational energies of longitudinal optical phonons of the third compound semiconductor and the fourth compound semiconductor are higher than the vibrational energy of a longitudinal optical phonon of GaAs and lower than or equal to the vibrational energy of a longitudinal optical phonon of AlN.

公开(公告)号：US20170141243A1

公开(公告)日：2017-05-18

申请号：US15352632

申请日：2016-11-16

Applicant: Sharp Kabushiki Kaisha ,  The University of Tokyo

Inventor： Teruhisa KOTANI ,  Yasuhiko ARAKAWA ,  Tetsu TATSUMA

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/022408 ,  H01L31/02327 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/09 ,  Y02E10/544

Abstract: A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.

公开(公告)号：US20130270517A1

公开(公告)日：2013-10-17

申请号：US13779257

申请日：2013-02-27

Applicant: SHARP KABUSHIKI KAISHA ,  THE UNIVERSITY OF TOKYO

Inventor： Tomohiro NOZAWA ,  Yasuhiko ARAKAWA ,  Jun TATEBAYASHI

IPC: H01L33/04 ,  H01L29/15

CPC classification number: H01L33/04 ,  H01L29/15 ,  H01L33/06

Abstract: A superlattice structure includes a plurality of quantum-dot nanowires extending in a substantially vertical direction from a plane region. The quantum-dot nanowires have a structure of barrier layers and quantum-dot layers alternately stacked on the plane region, and the quantum-dot nanowires are substantially the same in diameter in a stacking direction and substantially uniformly arranged at an area density of 4 nanowires/μm2 or more.

Abstract translation: 超晶格结构包括从平面区域沿大致垂直方向延伸的多个量子点纳米线。 量子点纳米线具有交替层叠在平面区域上的阻挡层和量子点层的结构，并且量子点纳米线在层叠方向上的直径基本相同，并且基本均匀地排列在4纳米线的面积密度 / mum2以上。