公开(公告)号：US09813049B2

公开(公告)日：2017-11-07

申请号：US14824460

申请日：2015-08-12

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Manu Rastogi ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H03K5/153 ,  H03K3/3565 ,  H03K3/45 ,  H03K3/012 ,  H03K5/24

CPC classification number: H03K3/3565 ,  H03K3/012 ,  H03K3/45 ,  H03K3/455 ,  H03K5/2409 ,  H03K5/2472

Abstract: A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.

公开(公告)号：US20170141729A1

公开(公告)日：2017-05-18

申请号：US15417468

申请日：2017-01-27

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H03B15/00

CPC classification number: H03B15/006 ,  G01R33/09 ,  G01R33/1284 ,  G11B5/314 ,  G11B5/3146 ,  G11B5/35 ,  G11B5/3909 ,  G11B2005/0024 ,  G11B2005/3996

Abstract: An apparatus includes a polarizer of a spin-torque oscillator (STO). The polarizer has a perpendicular magnetic anisotropy (PMA) and is configured to receive a first signal having a current density of between 0.51×106 amps per square centimeter (amps/cm2) and 15.3×106 amps/cm2. The apparatus also includes a magnetically soft oscillating region including an antiferromagnetic (AF) coupling layer coupling a first free layer to a second free layer and located between the polarizer and a reference region. The reference region is configured to output a second signal responsive to the first signal, the second signal having a frequency less than 8 gigahertz (GHz).

公开(公告)号：US09646670B2

公开(公告)日：2017-05-09

申请号：US15158658

申请日：2016-05-19

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Jimmy Kan ,  Seung Hyuk Kang

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C8/00

CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

公开(公告)号：US09634237B2

公开(公告)日：2017-04-25

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Jimmy Kan ,  Xiaochun Zhu ,  Matthias Georg Gottwald ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US09620706B2

公开(公告)日：2017-04-11

申请号：US14558103

申请日：2014-12-02

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Chando Park ,  Jimmy Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L21/02 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/12

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

公开(公告)号：US09595917B2

公开(公告)日：2017-03-14

申请号：US14818549

申请日：2015-08-05

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Kan ,  Kangho Lee ,  Seung Hyuk Kang

IPC: G11B5/31 ,  H03B15/00 ,  G11B5/35 ,  G11B5/00

CPC classification number: H03B15/006 ,  G01R33/09 ,  G01R33/1284 ,  G11B5/314 ,  G11B5/3146 ,  G11B5/35 ,  G11B5/3909 ,  G11B2005/0024 ,  G11B2005/3996

Abstract: An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer.

Abstract translation: 一种装置包括偏振器，第一自由层，第二自由层和反铁磁（AF）耦合层。 偏振器具有垂直磁各向异性（PMA）。 偏振器，第一自由层，第二自由层和AF耦合层包括在自旋扭矩振荡器（STO）中。 AF耦合层位于第一自由层和第二自由层之间。

公开(公告)号：US20160225817A1

公开(公告)日：2016-08-04

申请号：US14609169

申请日：2015-01-29

Applicant: QUALCOMM Incorporated

Inventor： Vladimir Machkaoutsan ,  Matthias Georg Gottwald ,  Mustafa Badaroglu ,  Jimmy Kan ,  Kangho Lee ,  Yu Lu ,  Chando Park

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.

Abstract translation: 半导体器件包括第一磁性隧道结（MTJ）器件，第二MTJ器件和顶部电极。 第一MTJ装置包括阻挡层。 第二MTJ装置包括阻挡层。 顶部电极耦合到第一MTJ装置和第二MTJ装置。

公开(公告)号：US09385309B2

公开(公告)日：2016-07-05

申请号：US14334015

申请日：2014-07-17

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg Gottwald ,  Jimmy Kan ,  Kangho Lee ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。

公开(公告)号：US20160155931A1

公开(公告)日：2016-06-02

申请号：US14558103

申请日：2014-12-02

Applicant: QUALCOMM Incorporated

Inventor： Kangho Lee ,  Chando Park ,  Jimmy Kan ,  Matthias Georg Gottwald ,  Xiaochun Zhu ,  Seung Hyuk Kang

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/12

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

Abstract translation: 一种装置包括设置在自由层顶部的覆盖层。 该设备还包括设置在覆盖层顶部上的磁性蚀刻停止层。 覆盖层和磁蚀刻停止层包括在自旋传递转矩磁阻随机存取存储器（STT-MRAM）磁隧道结（MTJ）装置中。