公开(公告)号：US20240030109A1

公开(公告)日：2024-01-25

申请号：US18474654

申请日：2023-09-26

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Taro NISHIOKA ,  Hiroaki MATSUBARA

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49562 ,  H01L23/49503 ,  H01L24/48 ,  H01L24/45 ,  H01L2924/13091 ,  H01L2224/48247 ,  H01L2224/45144

Abstract: A semiconductor device includes: a plurality of conductive members including a first die pad and a second die pad that are spaced apart from each other; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and an insulator that is electrically connected to the first semiconductor element and the second semiconductor element, and that insulates the first semiconductor element and the second semiconductor element from each other. The plurality of conductive members include a third die pad spaced apart from the first die pad and the second die pad. The insulator is mounted on the third die pad.

公开(公告)号：US20220102252A1

公开(公告)日：2022-03-31

申请号：US17468111

申请日：2021-09-07

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Hiroaki MATSUBARA ,  Tomohira KIKUCHI

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065

Abstract: There is provided a semiconductor device including: a conductive support including a first die pad and a second die pad having a potential different from a potential of the first die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin that covers the first semiconductor element, the second semiconductor element, and at least a portion of the conductive support.

公开(公告)号：US20240379574A1

公开(公告)日：2024-11-14

申请号：US18777194

申请日：2024-07-18

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Taro NISHIOKA

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/495 ,  H01L23/64 ,  H01L25/065

Abstract: A semiconductor device is configured to suppress an occurrence of dielectric breakdown in the semiconductor device. The semiconductor device includes an insulating element, a conductive member on which the insulating element is mounted, and a sealing resin covering the insulating element. The conductive member includes an uneven part covered by the sealing resin. As an example, in the semiconductor device, the conductive member includes a first die pad on which the insulating element is mounted, and the uneven part includes a first region that is provided on the first die pad.

公开(公告)号：US20240006274A1

公开(公告)日：2024-01-04

申请号：US18465558

申请日：2023-09-12

Applicant: ROHM CO., LTD.

Inventor： Ryohei UMENO ,  Hiroaki MATSUBARA ,  Yoshizo OSUMI ,  Tomohira KIKUCHI ,  Moe YAMAGUCHI

IPC: H01L23/495 ,  H01L25/18 ,  H01L23/29 ,  H01L23/00

CPC classification number: H01L23/49555 ,  H01L23/49575 ,  H01L25/18 ,  H01L23/295 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L23/3121

Abstract: A semiconductor device includes: conductive members including first and second members; a first semiconductor element electrically connected to one conductive member; a second semiconductor element electrically connected to one conductive member configured to receive input of a voltage different from that applied to the first semiconductor element; and a sealing resin covering a part of each conductive member, the first semiconductor element, and the second semiconductor element. The voltage applied to the second member differs from the voltage applied to the first member. The sealing resin contains electrically insulating fillers. When a square cross section having a side length equal to ⅔ of a minimum spacing between two adjacent conductive members is hypothetically defined in the sealing resin, eight or more of the fillers each having a particle size equal to or greater than ⅛ of the minimum spacing are at least partially contained in the square cross section.

公开(公告)号：US20230386983A1

公开(公告)日：2023-11-30

申请号：US18449360

申请日：2023-08-14

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Taro NISHIOKA ,  Tomohira KIKUCHI ,  Kenji FUJII ,  Hiroaki MATSUBARA

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49541 ,  H01L24/48 ,  H01L2224/48175 ,  H01L2224/48137

Abstract: A semiconductor device includes first and second semiconductor elements, a conductive support, a third semiconductor element and a sealing resin. The conductive support includes first and second leads spaced apart in a first direction. The first semiconductor element is supported by the first lead. The second semiconductor element is supported by the second lead. The third semiconductor element, supported by the conductive support, insulates the first semiconductor element and the second semiconductor element. The sealing resin covers a part of the conductive support. A distance d1 between the first lead and the second lead in the first direction is greater than distance d0 given by Equation below. In Equation below, Y is the number of years of insulation life (years) expected for the semiconductor device, A and B are constants determined by a material of the sealing resin, and X is a voltage (kVrms).





d
⁢
0

=



Y
A

B

×
0.15
×
X

公开(公告)号：US20230343684A1

公开(公告)日：2023-10-26

申请号：US18343290

申请日：2023-06-28

Applicant: ROHM CO., LTD.

Inventor： Tomohira KIKUCHI ,  Hiroaki MATSUBARA ,  Yoshizo OSUMI ,  Moe YAMAGUCHI ,  Ryohei UMENO

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49503 ,  H01L24/48 ,  H01L23/49562 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor control element, a first drive element, a second drive element, a first insulating element and a second insulating element. In plan view, the first drive element and the second drive element are located on the opposite sides with respect to the semiconductor control element. The first insulating element is located between the semiconductor control element and the first drive element, relays a signal transmitted from the semiconductor control element to the first drive element, and provides electrical insulation between the semiconductor control element and the first drive element. The second insulating element is located between the semiconductor control element and the second drive element, relays a signal transmitted from the semiconductor control element to the second drive element, and provides electrical insulation between the semiconductor control element and the second drive element.

公开(公告)号：US20220077082A1

公开(公告)日：2022-03-10

申请号：US17465973

申请日：2021-09-03

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Hiroaki MATSUBARA ,  Tomohira KIKUCHI

IPC: H01L23/64 ,  H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device includes a conductive support member, a first semiconductor element, a second semiconductor element, an insulating element, and a sealing resin. The conductive support member includes a first die pad and a second die pad, which are separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. When viewed along a thickness direction, a peripheral edge of the first die pad has a first near-angle portion including a first end portion in a second direction orthogonal to both the thickness direction and the first direction. The first near-angle portion is separated from the second die pad in the first direction toward the first end portion in the second direction.

公开(公告)号：US20250072012A1

公开(公告)日：2025-02-27

申请号：US18790083

申请日：2024-07-31

Applicant: ROHM CO., LTD.

Inventor： Masanobu TSUJI ,  Yoshizo OSUMI

IPC: H01F27/28 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a first chip including a first semiconductor substrate, a first circuit, and a first element insulating layer formed over the first semiconductor substrate; a second chip spaced apart from the first chip in a first direction and including a second semiconductor substrate, a second circuit, and a second element insulating layer formed over the second semiconductor substrate; a sub-mount chip separate from the first and second chips; and a transformer chip disposed over the sub-mount chip and including a transformer through which the first and second circuits transmit signals or power, wherein the transformer chip includes a third semiconductor substrate and a third element insulating layer formed over the third semiconductor substrate, wherein the transformer is embedded in the third element insulating layer, and wherein the sub-mount chip includes a fourth semiconductor substrate and an insulating layer formed over the fourth semiconductor substrate.

公开(公告)号：US20250070103A1

公开(公告)日：2025-02-27

申请号：US18790093

申请日：2024-07-31

Applicant: ROHM CO., LTD.

Inventor： Masanobu TSUJI ,  Yoshizo OSUMI ,  Keiji WADA ,  Bungo TANAKA

IPC: H01L25/16 ,  H01F27/28 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes: a first chip including a first circuit; a second chip disposed to be spaced apart from the first chip in a first direction and including a second circuit; and a transformer chip disposed over the first chip and including a transformer. The first circuit and the second circuit are configured to transmit a signal or power via the transformer. The transformer chip includes: an element insulating layer; and an outer coil and an inner coil disposed as the transformer in the element insulating layer. The inner coil is disposed inside the outer coil so as not to overlap the outer coil when viewed from a thickness direction of the element insulating layer.

公开(公告)号：US20240030105A1

公开(公告)日：2024-01-25

申请号：US18480233

申请日：2023-10-03

Applicant: ROHM CO., LTD.

Inventor： Yoshizo OSUMI ,  Yasushi HAMAZAWA ,  Tomohira KIKUCHI

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/49503 ,  H01L23/49575 ,  H01L23/3135 ,  H01L24/48 ,  H01L23/49541 ,  H01L2224/48175

Abstract: A semiconductor device includes: a first die pad; a second die pad; a first semiconductor element on the first die pad; a second semiconductor element on the second die pad; an insulating element electrically connected to the first semiconductor element and the second semiconductor element and electrically insulating the first and second semiconductor elements from each other; a sealing resin covering the first semiconductor element, the second semiconductor element and the insulating element; and a support member on which the insulating element is mounted, where the support member includes an insulating portion containing a resin. The first die pad and the second die pad are spaced apart from each other in a first direction orthogonal to a thickness direction of the first semiconductor element. The support member is supported by at least one of the first die pad, the second die pad and the sealing resin.