摘要:
A photoresist suitable for the production of structures in the submicron range contains the following components:a polymer component with carboxylic acid anhydride functions and carboxylic acid tert. butyl ester groupsa photoinitiator which releases an acid when exposed anda suitable solvent.
摘要:
A finely structurable resist system for a dry development process is provided. A latent image is produced in a light-sensitive layer by imaging exposure and is intensified by treatment with, for example, an organosilicon compound. The etching resistance to an oxygen plasma is simultaneously increased. The light-sensitive layer preferably comprises anhydride or epoxy groups that are suitable for reaction with the functional groups of the organosilicon compounds. A silylizing treatment can be implemented with a solution or emulsion in a simple apparatus or can be implemented in the vapor phase.
摘要:
A photolithographic method for structure generation in bilayer processes is provided. Pursuant to the method, a dimensional reserve is produced in a top resist structure by chemical treatment with a bulging agent. The expansion preferably is performed by treatment with an aqueous solution. The expansion can be set such that the dimensional loss to be anticipated in further etchings of the bottom resist or, respectively, of the wafer is exactly compensated for.
摘要:
A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.1 being formed in the dielectric material; (4) a metallic seed layer is applied to the dielectric material or rather to the lift-off layer through vapor deposition in a directed manner; (5) the lift-off layer is removed using an organic solvent; and (6) conducting tracks are created in the grooves through currentless metal deposition.
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 and R.sup.2 is CN or NO.sub.2.
摘要:
A method for producing poly-o-hydroxy amides by conversion of an activated dicarboxylic acid derivative with a bis-o-aminophenol. A solution of the activated dicarboxylic acid derivative is added to a solution of the bis-o-aminophenol in a lactone, and a tertiary amine is added to the resulting mixture, wherein the lactone has the following structure: ##STR1## where A is--(CR.sup.1 R.sup.2).sub.m --or--(CR.sup.3 R.sup.4).sub.n --NR.sup.5 --, R.sup.1 to R.sup.5 are independent of one another R.sup.1 and R.sup.2 are hydrogen, alkyl with 1 to 7 carbon atoms (linear or branched), --CO(CH.sub.2).sub.p CH.sub.3, or --COO(CH.sub.2).sub.p CH.sub.3, with p=0 or 1, R.sup.3 and R.sup.4 are hydrogen or alkyl with 1 to 3 carbon atoms (linear or branched), R.sup.5 is hydrogen or methyl, m is a whole number from 2 to 11, and n is a whole number from 1 to 3.
摘要:
Methods for producing solutions of polybenzoxazol precursors that are soluble in alkali and resist solutions based on such precursors. A dicarboxylic acid halogenide is reacted with a bis-(o-aminophenol) in an organic solvent and in the presence of a polymer with a tertiary N atom, which is insoluble in the solvent. Excess polymer and hydrohalogenide are separated from the reaction solution. The reaction solution is optionally mixed with a photoactive component.
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid ester with the following structure: G--O--CO--R*--CO--O--G, where G is an (optionally substituted) succinimide or maleinimide group and R* is the parent body of the dicarboxylic acid.
摘要:
A method for producing poly-o-hydroxy amides by heating a dicarboxylic acid to a temperature .gtoreq.80.degree. C., together with a sulfonic acid chloride and a tertiary amine in a suitable solvent, to form a reaction mixture and reacting the mixture obtained with a bis-o-aminophenol solution at a temperature
摘要:
In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted at a temperature of .ltoreq.0.degree. C. with a mixed dianhydride of a dicarboxylic acid and a sulfonic acid with the following structure: E--SO.sub.2 --O--CO--R*--CO--O--SO.sub.2 --E where E is an (optionally substituted) methyl, phenyl, or naphthyl group and R* is the parent body of the dicarboxylic acid.