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公开(公告)号：US06262462B1
公开(公告)日：2001-07-17
申请号：US09102191
申请日：1998-06-22
IPC分类号： H01L2976
CPC分类号： H01L21/28194 , H01L21/31604 , H01L29/511 , H01L29/516 , H01L29/517
摘要： A field effect transistor with an enhanced dielectric constant gate insulator including spaced apart source and drain terminals positioned on a substrate structure so as to define a gate area therebetween. A layer of laterally strained, enhanced dielectric constant dielectric material is epitaxially grown on the substrate structure in the gate area, and a gate metal is positioned on the layer of dielectric material to form a gate terminal in the gate area.
摘要翻译： 具有增强的介电常数栅极绝缘体的场效应晶体管，其包括位于衬底结构上的间隔开的源极和漏极端子，以便在它们之间限定栅极区域。 在栅极区域中的衬底结构上外延生长横向应变的增强介电常数介电材料层，并且栅极金属位于电介质材料层上以在栅极区域中形成栅极端子。
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公开(公告)号：US6020213A
公开(公告)日：2000-02-01
申请号：US69244
申请日：1998-04-29
CPC分类号： H01L29/78391
摘要： A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (13) of ferroelectric material disposed on a semiconductor substrate (11) and a gate electrode (17) formed on a portion (26) of the layer (13) of ferroelectric material. The portion (26) of the layer (13) of ferroelectric material sandwiched between a semiconductor substrate (11) and a gate electrode (17) retains its ferroelectric activity. The portions (21, 22) of the layer (13) of ferroelectric material adjacent the portion (26) are damaged and thereby rendered ferroelectrically inactive. A source contact (31) and a drain contact (32) are formed through the damaged portions (21, 22) of the layer (13) of ferroelectric material.
摘要翻译： 铁电半导体器件（10）和制造铁电半导体器件（10）的方法。 铁电半导体装置（10）具有设置在半导体基板（11）上的铁电体层（13）和形成在铁电体层（13）的部分（26）上的栅电极（17）。 夹在半导体衬底（11）和栅电极（17）之间的铁电材料层（13）的部分（26）保持其铁电活性。 邻近部分（26）的铁电材料层（13）的部分（21,22）被损坏，从而变成铁电非活性的。 通过铁电材料层（13）的损坏部分（21,22）形成源极触点（31）和漏极触点（32）。
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公开(公告)号：US5874755A
公开(公告)日：1999-02-23
申请号：US743768
申请日：1996-11-07
IPC分类号： H01L29/78
CPC分类号： H01L29/78391
摘要： A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (13) of ferroelectric material disposed on a semiconductor substrate (11) and a gate electrode (17) formed on a portion (26) of the layer (13) of ferroelectric material. The portion (26) of the layer (13) of ferroelectric material sandwiched between a semiconductor substrate (11) and a gate electrode (17) retains its ferroelectric activity. The portions (21, 22) of the layer (13) of ferroelectric material adjacent the portion (26) are damaged and thereby rendered ferroelectrically inactive. A source contact (31) and a drain contact (32) are formed through the damaged portions (21, 22) of the layer (13) of ferroelectric material.
摘要翻译： 铁电半导体器件（10）和制造铁电半导体器件（10）的方法。 铁电半导体装置（10）具有设置在半导体基板（11）上的铁电体层（13）和形成在铁电体层（13）的部分（26）上的栅电极（17）。 夹在半导体衬底（11）和栅电极（17）之间的铁电材料层（13）的部分（26）保持其铁电活性。 邻近部分（26）的铁电材料层（13）的部分（21,22）被损坏，从而变成铁电非活性的。 通过铁电材料层（13）的损坏部分（21,22）形成源极触点（31）和漏极触点（32）。
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公开(公告)号：US06262461B1
公开(公告)日：2001-07-17
申请号：US09102105
申请日：1998-06-22
IPC分类号： H01L31119
CPC分类号： H01L29/66568 , H01L29/4975 , H01L29/517 , H01L29/78 , H01L29/7838
摘要： A method of fabricating a field effect transistor including doping a continuous blanket layer in a semiconductor substrate structure adjacent the surface to include a source area and a drain area spaced from the source area. A high dielectric constant insulator layer is positioned on the surface of the semiconductor substrate structure overlying the continuous blanket layer to define a gate area between the source and drain areas. A gate contact on the insulator layer is selected to provide a work function difference that depletes the doped layer beneath the insulator layer. Further, the doped layer depth and dosage are designed such that the doped layer is depleted beneath the insulator layer by the selected work function difference of the gate contact and the semiconductor substrate.
摘要翻译： 一种制造场效应晶体管的方法，包括在邻近表面的半导体衬底结构中掺杂连续覆盖层，以包括与源极区域间隔开的源极区域和漏极区域。 高介电常数绝缘体层位于覆盖连续覆盖层的半导体衬底结构的表面上，以限定源区和漏区之间的栅极区。 选择绝缘体层上的栅极接触以提供消耗绝缘体层下方的掺杂层的功函数差异。 此外，掺杂层深度和剂量被设计成使得掺杂层通过栅极接触和半导体衬底的选择的功函数差耗尽在绝缘体层之下。
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公开(公告)号：US5825317A
公开(公告)日：1998-10-20
申请号：US835244
申请日：1997-04-07
CPC分类号： H03M1/1057 , H03M1/742
摘要： A ferroelectric transistor (72) is programmed with a gate voltage that shifts a threshold voltage of the ferroelectric transistor (72). The shifted threshold voltage generates a correction current (.DELTA.I.sub.(N-1)) in a combination circuit (52) that trims an output voltage of a DAC trim circuit (50). A ferroelectric material (32) of the ferroelectric transistor (72) stores a charge in accordance with a programming voltage and allows a dynamic adjustment of the correction current (.DELTA.I.sub.(N-1)) that is used to modify the output voltage of the DAC trim circuit (50).
摘要翻译： 铁电晶体管（72）用栅极电压编程，栅极电压使铁电晶体管（72）的阈值电压发生偏移。 偏移的阈值电压在修整DAC微调电路（50）的输出电压的组合电路（52）中产生校正电流（DELTA I（N-1））。 铁电晶体管（72）的铁电材料（32）根据编程电压存储电荷，并且允许动态调整用于修改电压的输出电压的校正电流（DELTA I（N-1）） DAC微调电路（50）。
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公开(公告)号：US07342276B2
公开(公告)日：2008-03-11
申请号：US10861467
申请日：2004-06-07
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/19 , H01L31/113
CPC分类号： H01L28/55 , H01L21/28194 , H01L21/28202 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/94
摘要： A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element and substantially lattice matched to the semiconductor material.
摘要翻译： 一种半导体器件，包括：半导体材料; 导电元件; 以及设置在半导体材料和导电元件之间并基本上与半导体材料晶格匹配的基本单晶绝缘体。
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17.发明授权Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权制造具有与硅结晶的碱土金属氧化物界面的半导体结构的方法公开(公告)号：US06224669B1
公开(公告)日：2001-05-01
申请号：US09662390
申请日：2000-09-14
申请人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C03B2514
CPC分类号： H01L21/31691 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/31604 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氧和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氧和XSiO 2形式的金属的原子层，其中X是金属。
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18.发明授权Method of preparing crystalline alkaline earth metal oxides on a Si substrate 失效在Si衬底上制备结晶碱土金属氧化物的方法
公开(公告)号：US6113690A
公开(公告)日：2000-09-05
申请号：US93081
申请日：1998-06-08
摘要： A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.
摘要翻译： 在Si衬底上制备结晶碱土金属氧化物的方法，其中提供了表面上具有无定形二氧化硅的Si衬底。 将基底加热至700℃至800℃的温度，并在分子束外延室内以大约10-9-10℃的压力暴露于一束或多束碱土金属， 10乇范围。 在分子束外延期间，通过RHEED技术监测表面以确定无定形二氧化硅向结晶碱土金属氧化物的转化。 一旦形成碱土金属氧化物，可以使用另外的材料层。 用于非易失性和高密度存储器件应用的碱土金属氧化物，单晶铁电体或硅上的高介电常数氧化物的附加厚度。
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19.发明授权Electrochemical battery pack with reduced magnetic field emission and corresponding devices 有权具有减少磁场发射的电化学电池组和相应的器件公开(公告)号：US08642205B2
公开(公告)日：2014-02-04
申请号：US12853055
申请日：2010-08-09
申请人： Hossein Maleki , Jerald A. Hallmark
发明人： Hossein Maleki , Jerald A. Hallmark
摘要： A battery pack with reduced magnetic field emissions includes a plurality of cells (1301,1302) coupled electrically together by a first electrical conductor (1307) and a second electrical conductor (1308). The first electrical conductor (1307) couples positive terminals (1305,1306) to a terminal block (1311), while the second electrical conductor (1308) couples the negative terminals (1303,1304) to the terminal block (1311). Each cell (1301,1302) contains an asymmetrical internal electrode construction (1313,1314) having electrical tabs (502,503) coupled to a cathode and anode. The cells (1301,1302) can be arranged with their corresponding asymmetrical internal electrode constructions (1313,1314) oriented in different directions to reduce magnetic field emissions. The first electrical conductor (1307) and second electrical conductor (1308) can be routed such that magnetic fields generated by discharge currents tend to reduce other magnetic fields produced by other components within the battery pack.
摘要翻译： 具有减小的磁场发射的电池组包括通过第一电导体（1307）和第二电导体（1308）电连接的多个电池单元（1301,1302）。 第一电导体（1307）将正端子（1305,1306）耦合到端子块（1311），而第二电导体（1308）将负端子（1303,1304）耦合到端子块（1311）。 每个单元（1301,1302）包含具有耦合到阴极和阳极的电接头（502,503）的不对称内部电极结构（1313,1314）。 电池（1301,1302）可以布置成其对应的不对称内部电极结构（1313,1314）定向在不同的方向以减小磁场发射。 可以布置第一电导体（1307）和第二电导体（1308），使得由放电电流产生的磁场倾向于减少由电池组内的其它部件产生的其它磁场。
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公开(公告)号：US06646418B1
公开(公告)日：2003-11-11
申请号：US10202594
申请日：2002-07-24
申请人： Chenggang Xie , Jerald A. Hallmark
发明人： Chenggang Xie , Jerald A. Hallmark
IPC分类号： H01M1046
CPC分类号： H01M8/04552 , G01R19/16542 , G01R31/3658 , H01M8/04559 , H01M8/04582 , H01M8/04589 , H01M8/04947 , H01M10/46 , H01M16/006
摘要： A fuel cell system is protected by monitoring at least one fuel cell parameter, comparing the parameter to a preset level, and disconnecting or reconnecting a main load in response to the fuel cell parameter. For example, a fuel cell system (300) is provided with a protection circuit (304, 308) that prevents operation of the fuel cells in the negative dP/dI region. System (300) includes a stack of fuel cells (302) connected in series and coupled to a main load (310). A controller (304) provides a control signal (314) based on the individual fuel cell voltage levels falling above or below a preset level. Control signal (314)is used to control a load switch (308)coupled between the stack of fuel cells (302) and the main load (310). The load switch (308) disconnects the main load (310) in order to prevent operation of the fuel cell cells in the negative dP/dI region.
摘要翻译： 燃料电池系统通过监视至少一个燃料电池参数来保护，将参数与预设电平进行比较，以及响应于燃料电池参数断开或重新连接主负载。 例如，燃料电池系统（300）设置有防止燃料电池在负dP / dI区域中的操作的保护电路（304,308）。 系统（300）包括串联连接并耦合到主负载（310）的一堆燃料电池（302）。 控制器（304）基于落在高于或低于预设水平的各个燃料电池电压电平来提供控制信号（314）。 控制信号（314）用于控制耦合在燃料电池堆（302）和主负载（310）之间的负载开关（308）。 负载开关（308）断开主负载（310），以防止在负dP / dI区域内的燃料电池单元的操作。
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