公开(公告)号：US12302702B2

公开(公告)日：2025-05-13

申请号：US18739329

申请日：2024-06-11

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Kiseok Choi

IPC: H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H10K59/65 ,  H10K77/10 ,  H01L27/12 ,  H01L29/786 ,  H10K102/00

Abstract: Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

公开(公告)号：US11864411B2

公开(公告)日：2024-01-02

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H10K50/844 ,  H01L29/786 ,  H10K71/00

CPC classification number: H10K50/844 ,  H01L29/786 ,  H10K71/00

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.

公开(公告)号：US20230090817A1

公开(公告)日：2023-03-23

申请号：US17743424

申请日：2022-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Joohee Jeon ,  Sanggun Choi

IPC: H01L27/32

Abstract: A display apparatus for displaying a high-resolution image and having a low occurrence rate of defects caused by a voltage drop. The display apparatus includes a substrate, a first conductive layer arranged on the substrate and including an auxiliary data line extending in a first direction, a first semiconductor layer arranged on the first conductive layer, a first gate layer arranged on the first semiconductor layer, a first connection electrode layer arranged on the first gate layer and including a first connection electrode electrically connected to the first semiconductor layer and the auxiliary data line, and a second connection electrode layer arranged on the first connection electrode layer and including a data line electrically connected to the first connection electrode.

公开(公告)号：US09417516B2

公开(公告)日：2016-08-16

申请号：US14794079

申请日：2015-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bongyeon Kim ,  Min Kang ,  Yong Son ,  Hyunjoo Lee ,  Myounggeun Cha ,  Jinho Ju

IPC: H01L21/00 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02

CPC classification number: H01L21/0268 ,  G03F1/30 ,  G03F7/0043 ,  G03F7/20 ,  H01L21/02532 ,  H01L21/02678

Abstract: Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Abstract translation: 提供一种制造显示装置的方法，所述方法包括在基板上形成非晶硅层; 通过用通过相移掩模发射的激光束照射非晶硅，将非晶硅层中的非晶硅变成晶体硅; 以及形成显示装置，所述相移掩模包括基底基板; 在所述基底基板上的阻挡层，并且包括在第一方向上彼此间隔开的多个透射部; 以及在第一方向交替地填充多个透射部的相移部。

公开(公告)号：US20140191228A1

公开(公告)日：2014-07-10

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： SEOHONG JUNG ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。

公开(公告)号：US20240284705A1

公开(公告)日：2024-08-22

申请号：US18486396

申请日：2023-10-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kiseok Choi ,  Myounggeun Cha ,  Jongjun Baek ,  Heekyun Shin ,  Yonghoon Yang

IPC: H10K59/121 ,  H10K59/12 ,  H10K59/122

CPC classification number: H10K59/1213 ,  H10K59/1201 ,  H10K59/122 ,  H10K2102/103

Abstract: A display apparatus includes: a first substrate including a polymer resin; a first barrier layer on the first substrate and including a portion doped with ions, wherein the portion includes an upper surface of the first barrier layer; a second substrate on the upper surface of the first barrier layer and including a polymer resin; a buffer layer on the second substrate; a first thin-film transistor on the buffer layer; and a light-emitting diode electrically connected to the first thin-film transistor.

公开(公告)号：US11455955B2

公开(公告)日：2022-09-27

申请号：US17264703

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yongsu Lee

IPC: G09G3/3258 ,  G09G3/3233 ,  G09G3/3225

Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

公开(公告)号：US11183650B2

公开(公告)日：2021-11-23

申请号：US16202595

申请日：2018-11-28

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Meejae Kang ,  Sanggab Kim ,  Joon woo Bae ,  Thanh Tien Nguyen ,  Kyoungwon Lee ,  Yongsu Lee

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/50 ,  H01L51/56

Abstract: A display substrate includes a first conductive layer on a base substrate, a first insulation layer on the first conductive layer, a second conductive layer on the first insulation layer, a second insulation layer on the second conductive layer, and a third conductive layer on the second insulation layer. The third conductive layer is connected to the first conductive layer and the second conductive layer through a contact hole passing through the first insulation layer, the second conductive layer, and the second insulation layer. A sidewall of the contact hole has a stepped shape.

公开(公告)号：US11024696B2

公开(公告)日：2021-06-01

申请号：US16510614

申请日：2019-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Yongsu Lee ,  Sanggun Choi ,  Jiyeong Shin

IPC: H01L27/32 ,  H01L51/00 ,  H01L27/12

Abstract: A display apparatus has a display area and a non-display area around the display area, the display apparatus includes, in the non-display area, a first power line, a driving circuit on a layer over the first power line, and a second power line electrically connected to the first power line and on a same layer on which one electrode of the driving circuit is arranged.

公开(公告)号：US09837316B2

公开(公告)日：2017-12-05

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L21/77 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L21/3205 ,  H01L27/32

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.