PHOTON PAIR GENERATOR AND QUANTUM CRYPTOGRAPHY SYSTEM EMPLOYING THE SAME
    11.
    发明申请
    PHOTON PAIR GENERATOR AND QUANTUM CRYPTOGRAPHY SYSTEM EMPLOYING THE SAME 审中-公开
    光子对发生器和使用它的量子压缩系统

    公开(公告)号:US20160094342A1

    公开(公告)日:2016-03-31

    申请号:US14684513

    申请日:2015-04-13

    CPC classification number: H04L9/0852 H04B10/70

    Abstract: A photon pair generator includes a light source configured to emit light, and a nonlinear optical element configured to receive the light radiated from the light source and generate a quantum-entangled photon pair through spontaneous parametric down-conversion (SPDC), the nonlinear optical element including a polar material layer and a nonlinear material layer provided on the polar material layer.

    Abstract translation: 光子对发生器包括被配置为发光的光源和被配置为接收从光源辐射的光并通过自发参数下变换(SPDC)产生量子纠缠的光子对的非线性光学元件,非线性光学元件 包括极性材料层和设置在极性材料层上的非线性材料层。

    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    12.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    半导体器件及其制造方法以及包括其的电子器件

    公开(公告)号:US20150364472A1

    公开(公告)日:2015-12-17

    申请号:US14712041

    申请日:2015-05-14

    Abstract: A semiconductor device, a method for manufacturing the same, and an electronic device including the same are provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel layer and a first ion gel. The second transistor includes a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, graphene. The first ion gel and the second ion gel include different ionic liquids. The first ion gel and the second ion gel include different cations and/or different anions. One of the first transistor and the second transistor is a p-type transistor, and the other one is an n-type transistor. The combination of the first transistor and the second transistor constitutes an inverter.

    Abstract translation: 提供半导体器件,其制造方法和包括该半导体器件的电子器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括第一沟道层和第一离子凝胶。 第二晶体管包括第二沟道层和第二离子凝胶。 第一沟道层和第二沟道层可以包括例如石墨烯。 第一离子凝胶和第二离子凝胶包括不同的离子液体。 第一离子凝胶和第二离子凝胶包括不同的阳离子和/或不同的阴离子。 第一晶体管和第二晶体管中的一个是p型晶体管,另一个是n型晶体管。 第一晶体管和第二晶体管的组合构成逆变器。

    MULTI-WAVELENGTH SURFACE PLASMON LASER AND OPTOELECTRONIC INTEGRATED CIRCUIT INCLUDING THE SAME
    17.
    发明申请
    MULTI-WAVELENGTH SURFACE PLASMON LASER AND OPTOELECTRONIC INTEGRATED CIRCUIT INCLUDING THE SAME 有权
    多波长表面等离子体激光器和包括其的光电集成电路

    公开(公告)号:US20150280401A1

    公开(公告)日:2015-10-01

    申请号:US14513477

    申请日:2014-10-14

    Abstract: A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.

    Abstract translation: 同时发射具有大量波长的表面等离子体激元的多波长表面等离子体激元,并且包括厚度随位置变化的有源层和长度随位置变化的金属腔,使得根据位置发射不同波长的光。 响应于不同波长的光,在金属层和半导体层之间的界面处产生表面等离子体激元。 具有不同波长的表面等离子体激元在金属腔中可以共振,其长度随着位置而变化并且可以发射到外部。

Patent Agency Ranking