Method of manufacturing variable resistance memory device

    公开(公告)号:US11683940B2

    公开(公告)日:2023-06-20

    申请号:US17339297

    申请日:2021-06-04

    Inventor: Dongkyu Lee

    CPC classification number: H01L27/2454 H01L45/08 H01L45/1233 H01L45/1608

    Abstract: A variable resistance memory device and a method of manufacturing the same, the variable resistance memory device including a substrate including a first memory region and a second memory region; a plurality of first memory cells on the first memory region; and a plurality of second memory cells on the second memory region, wherein each of the first memory cells includes a first resistance element and a selection element, each of the second memory cells includes a second resistance element, and a maximum value of a variable resistance of the second resistance element is less than a maximum value of a variable resistance of the first resistance element.

    Magnetic memory devices
    19.
    发明授权

    公开(公告)号:US10930702B2

    公开(公告)日:2021-02-23

    申请号:US16444541

    申请日:2019-06-18

    Inventor: Dongkyu Lee

    Abstract: A magnetic memory device may include magnetic tunnel junction patterns on a substrate, a conductive line extending between the substrate and the magnetic tunnel junction patterns and in contact with bottom surfaces of the magnetic tunnel junction patterns, and a bottom pattern located between the conductive line and the substrate and in contact with a bottom surface of the conductive line. The material of the conductive line may have a first lattice constant, and the material of the bottom pattern may have a second lattice constant that is less than the first lattice constant of the conductive line. Alternatively or additionally, the bottom pattern includes a metal nitride, and a nitrogen content of the bottom pattern is higher than a metal element content of the metal element.

    SPEECH RECOGNITION METHOD AND DEVICE
    20.
    发明申请

    公开(公告)号:US20190057701A1

    公开(公告)日:2019-02-21

    申请号:US16103195

    申请日:2018-08-14

    Abstract: An electronic device and method are disclosed herein. The electronic device implements the method, including: receiving a first speech, and extracting a first text from the received first speech, in response to detecting that extraction of the first text includes errors such that a request associated with the first speech is unprocessable, storing the extracted first text, receiving a second speech and extracting a second text from the received second speech, in response to detecting that the request is processable using the extracted second text, detecting whether a similarity between the first and second texts is greater than a similarity threshold, and whether the second speech is received within a predetermined time duration of receiving the first speech, and when the similarity is greater than the threshold, and the first and second speech signals are received within the time duration, storing the first text in association with the second text.

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