公开(公告)号：US20160139501A1

公开(公告)日：2016-05-19

申请号：US14755693

申请日：2015-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mun Ja Kim ,  Byunggook KIM ,  Jongju Park ,  Jaehyuck Choi

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.

Abstract translation: 提供一个面具。 掩模可以包括掩模基板，掩模基板上的掩模图案，设置在掩模图案外部的掩模基板的边缘上的框架，以及与掩模图案间隔开的防护薄膜组件，防护薄膜组件设置在框架上，其中防护薄膜组件 包括各自具有纳米厚度的保护层。

公开(公告)号：US20230236124A1

公开(公告)日：2023-07-27

申请号：US18179662

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G03F1/22 ,  G01J9/00 ,  G03F1/24 ,  G03F1/84 ,  G01N21/956

CPC classification number: G01N21/41 ,  G01J9/00 ,  G01N21/956 ,  G03F1/22 ,  G03F1/24 ,  G03F1/84 ,  G01N2021/335 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US20230073206A1

公开(公告)日：2023-03-09

申请号：US18048949

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G03F1/24 ,  B23K26/06

Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

公开(公告)号：US20210223680A1

公开(公告)日：2021-07-22

申请号：US16911601

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G03F1/24 ,  B23K26/06

Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

公开(公告)号：US20210033959A1

公开(公告)日：2021-02-04

申请号：US15931709

申请日：2020-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G03F1/24 ,  G03F1/60 ,  G03F1/58 ,  H01L21/308 ,  G03F1/72 ,  G03F7/20

Abstract: Disclosed are photomask manufacturing methods and semiconductor device fabrication methods. The photomask manufacturing method includes forming a reflective layer on a mask substrate having an image region and an edge region surrounding the image region, forming an absorption pattern on the reflective layer, forming a black border by irradiating a first laser beam to the reflective layer and the absorption pattern on the edge region, using a photomask having the black border to provide a test substrate with an extreme ultraviolet (EUV) beam to form a test pattern, obtaining a critical dimension correction map of the test pattern, and using the critical dimension correction map to irradiate a second laser beam to the reflective layer on a portion of the image region to form an annealed region that is thicker than the black border.