中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

20 records (took 0.026 seconds)

    IMAGE SENSOR
    11.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220123032A1

    公开(公告)日：2022-04-21

    申请号：US17360447

    申请日：2021-06-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Duck LEE ,  Doo Sik SEOL ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Masato FUJITA

    IPC: H01L27/146 ,  H01L23/60

    Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.

    IMAGE SENSOR
    12.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200322559A1

    公开(公告)日：2020-10-08

    申请号：US16730420

    申请日：2019-12-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun Sub SHIM ,  Kyung Ho LEE

    IPC: H04N5/378 ,  H01L27/146

    Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

    SEMICONDUCTOR PACKAGE
    13.
    发明申请
    SEMICONDUCTOR PACKAGE 审中-公开

    公开(公告)号：US20190341354A1

    公开(公告)日：2019-11-07

    申请号：US16171126

    申请日：2018-10-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Moon JUNG ,  Chul Kyu KIM ,  Seok Hwan KIM ,  Kyung Ho LEE ,  Seong Hwan PARK

    IPC: H01L23/552 ,  H01L23/522 ,  H01L23/31 ,  H01L23/00

    Abstract: A semiconductor package includes a support member having a first surface and a second surface, and having a through-hole, a first metal layer for shielding disposed on an internal sidewall of the through-hole and the first surface and the second surface of the support member, a connection member disposed on the first surface of the support member, and having a redistribution layer, a semiconductor chip disposed in the through-hole, an encapsulant sealing the semiconductor chip located in the through-hole, and covering the second surface of the support member, a second metal layer for shielding disposed on the encapsulant, and connected to the first metal layer for shielding by a connecting trench via passing through the encapsulant, and a reinforcing via disposed in a region, overlapping the trench via for connection, of the support member, and connected to the first metal layer for shielding.

    IMAGE SENSOR
    14.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20190296072A1

    公开(公告)日：2019-09-26

    申请号：US16436447

    申请日：2019-06-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Soo CHOI ,  Kyung Ho LEE

    IPC: H01L27/146 ,  H01L31/113 ,  H01L31/0203 ,  H01L31/062 ,  H01L31/0232 ,  H01L31/0216

    Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

    IMAGE SENSOR
    15.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20190296071A1

    公开(公告)日：2019-09-26

    申请号：US16436403

    申请日：2019-06-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Soo CHOI ,  Kyung Ho LEE

    IPC: H01L27/146 ,  H01L31/113 ,  H01L31/0203 ,  H01L31/062 ,  H01L31/0232 ,  H01L31/0216

    Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

    CMOS IMAGE SENSOR FOR REDUCING DEAD ZONE
    20.
    发明申请
    CMOS IMAGE SENSOR FOR REDUCING DEAD ZONE 有权
    CMOS图像传感器，用于减少死亡区域

    公开(公告)号：US20160099267A1

    公开(公告)日：2016-04-07

    申请号：US14872691

    申请日：2015-10-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung Wook LEE ,  Yi Tae KIM ,  Jong Eun PARK ,  Jung Chak AHN ,  Kyung Ho LEE ,  Tae Hun LEE ,  Hee Geun JEONG

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

    CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689 ,  H04N5/374 ,  H04N9/045

    Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

    Abstract translation: 提供了诸如互补金属氧化物半导体（CMOS）图像传感器的图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其包括通过从与第一表面相对的第二表面去除半导体衬底的一部分而形成的第一表面和第三表面; 多个有源区，形成在第一表面和第三表面之间，每个有源区包括响应于通过第三表面输入的光而产生电荷的光电转换元件; 以及从所述第一表面和所述第三表面中的任一个垂直地形成的隔离区域，以将所述活性区域彼此隔离。 当从第三表面的上方观察CMOS图像传感器时，每个有源区域可以具有圆角和凹面。

Patent Agency Ranking