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公开(公告)号：US10305003B2
公开(公告)日：2019-05-28
申请号：US15866968
申请日：2018-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-wook Hwang , Dong-myung Shin
Abstract: Provided is a light-emitting device including: a substrate; a light-emitting structure formed on the substrate; a first transmissive conductive layer on the light-emitting structure; a first dielectric pattern layer formed on the first transmissive conductive layer, the first dielectric pattern layer including a plurality of openings; a second transmissive conductive layer conformally formed on the first transmissive conductive layer exposed through the plurality of openings and on the first dielectric pattern layer; a second dielectric pattern layer filling the plurality of openings; and a reflective electrode layer formed on the second transmissive conductive layer and the second dielectric pattern layer.
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Patent Agency Ranking
12.发明申请公开(公告)号：US20190019922A1
公开(公告)日：2019-01-17
申请号：US15866968
申请日：2018-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-wook Hwang , Dong-myung Shin
Abstract: Provided is a light-emitting device including: a substrate; a light-emitting structure formed on the substrate; a first transmissive conductive layer on the light-emitting structure; a first dielectric pattern layer formed on the first transmissive conductive layer, the first dielectric pattern layer including a plurality of openings; a second transmissive conductive layer conformally formed on the first transmissive conductive layer exposed through the plurality of openings and on the first dielectric pattern layer; a second dielectric pattern layer filling the plurality of openings; and a reflective electrode layer formed on the second transmissive conductive layer and the second dielectric pattern layer.
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公开(公告)号：US10014454B2
公开(公告)日：2018-07-03
申请号：US15412320
申请日：2017-01-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-wook Hwang , Min-gyeong Gwon , Sae-sil Kim , Eun-joo Shin , Yu-ri Jung , Won-soo Ji , Jong-sup Song
CPC classification number: H01L33/60 , H01L33/44 , H01L33/46 , H01L33/507 , H01L33/58
Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.
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公开(公告)号：US20170324011A1
公开(公告)日：2017-11-09
申请号：US15412320
申请日：2017-01-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-wook Hwang , Min-gyeong Gwon , Sae-sil Kim , Eun-joo Shin , Yu-ri Jung , Won-soo Ji , Jong-sup Song
CPC classification number: H01L33/60 , H01L33/44 , H01L33/507
Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.
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公开(公告)号：US09142724B2
公开(公告)日：2015-09-22
申请号：US13973720
申请日：2013-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung-sub Kim , Jin-sub Lee , Cheol-soo Sone , Kyung-wook Hwang
CPC classification number: H01L33/38 , H01L33/405
Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.
Abstract translation: 氮化物系半导体发光元件包括n型氮化物系半导体层，有源层，p型氮化物系半导体层，覆盖p型氮化物系半导体的一部分的欧姆接触层 以及包括与p型氮化物类半导体层接触的第一部分和与欧姆接触层接触的第二部分的p电极。
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16.发明授权Light-emitting device having dielectric reflector and method of manufacturing the same 有权具有介质反射体的发光装置及其制造方法公开(公告)号：US08847265B2
公开(公告)日：2014-09-30
申请号：US13873688
申请日：2013-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-hoon Lee , Geon-wook Yoo , Nam-goo Cha , Kyung-wook Hwang
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.
Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。
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