公开(公告)号：US10014056B1

公开(公告)日：2018-07-03

申请号：US15598936

申请日：2017-05-18

Applicant: SanDisk Technologies LLC

Inventor： Aaron Lee ,  Yi-Chieh Chen ,  Anne Koh ,  Gulzar Kathawala ,  Mrinal Kochar

IPC: G11C7/22 ,  G11C16/06 ,  G11C16/26 ,  G11C11/56 ,  G11C16/10 ,  G11C16/04 ,  G11C29/02

CPC classification number: G11C7/22 ,  G11C7/222 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C29/023 ,  G11C29/028 ,  G11C29/18 ,  G11C29/36 ,  G11C2029/0409 ,  G11C2029/1804

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for changing storage parameters. An integrated circuit (IC) memory element receives a command to change a value of a parameter associated with the IC memory element. A parameter includes a setting for one or more storage operations of an IC memory element. An IC memory element receives one or more data sets with a command. A data set includes an identifier associated with a parameter to be changed and a new value for the parameter. Each of one or more data sets is received at a same data rate as a command. An IC memory element writes, for each of one or more data sets, a new value for a parameter to a storage location associated with the parameter.

公开(公告)号：US09858009B2

公开(公告)日：2018-01-02

申请号：US14923137

申请日：2015-10-26

Applicant: SanDisk Technologies LLC

Inventor： Abhijeet Bhalerao ,  Mrinal Kochar ,  Dennis S. Ea ,  Mikhail Palityka ,  Aaron Lee ,  Yew Yin Ng ,  Ivan Baran

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/065 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7208

Abstract: Data that is initially stored in Single Level Cell (SLC) blocks is subsequently copied (folded) to a Multi Level Cell (MLC) block where the data is stored in MLC format, the data copied in a minimum unit of a fold-set, the MLC block including a plurality of separately-selectable sets of NAND strings, data of an individual fold-set copied exclusively to two or more word lines of an individual separately-selectable set of NAND strings in the MLC block.

公开(公告)号：US09792175B2

公开(公告)日：2017-10-17

申请号：US14919363

申请日：2015-10-21

Applicant: SanDisk Technologies LLC

Inventor： Sahil Sharma ,  Abhijeet Manohar ,  Mrinal Kochar ,  Yong Huang ,  Derek McAuley ,  Mikhail Palityka ,  Ivan Baran ,  Aaron Lee

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G11C16/3418 ,  G11C29/02 ,  G11C29/028 ,  G11C29/42 ,  G11C29/44 ,  G11C29/52

Abstract: When the number of bad columns in a memory or plane is less than a threshold number then a first Error Correction Code (ECC) scheme encodes user data in first pages of a first size. If the number of bad columns is greater than the threshold number then a second ECC scheme encodes the user data in second pages of a second size that is smaller than the first size.