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公开(公告)号：US10083995B2
公开(公告)日：2018-09-25
申请号：US15598651
申请日：2017-05-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
CPC classification number: H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
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公开(公告)号：US09761645B2
公开(公告)日：2017-09-12
申请号：US15177470
申请日：2016-06-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
IPC: H01L27/12 , H01L27/32 , H01L21/768 , H01L33/00 , H01L51/52
CPC classification number: H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
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公开(公告)号：US09406806B2
公开(公告)日：2016-08-02
申请号：US14801098
申请日：2015-07-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L23/48 , H01L29/786 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L23/498 , H01L27/12
CPC classification number: H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
Abstract: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US09368561B2
公开(公告)日：2016-06-14
申请号：US14454092
申请日：2014-08-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
CPC classification number: H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。
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公开(公告)号：US09235095B2
公开(公告)日：2016-01-12
申请号：US14640045
申请日：2015-03-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado
IPC: G02F1/136 , G02F1/1343 , G02F1/1333 , G02F1/1368 , H01L27/12 , H01L29/786 , G02F1/1362 , G02F1/1345
CPC classification number: H01L27/1255 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78651 , H01L29/78675
Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
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Patent Agency Ranking
公开(公告)号：US08946717B2
公开(公告)日：2015-02-03
申请号：US13957870
申请日：2013-08-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L29/10 , H01L35/24 , H01L27/12 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L29/786 , H01L23/498
CPC classification number: H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
Abstract: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US08927994B2
公开(公告)日：2015-01-06
申请号：US14204342
申请日：2014-03-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Satoshi Murakami , Mitsuaki Osame
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.
Abstract translation: 提供了一种显示装置，包括第一氮化硅膜，第一氮化硅膜上的有机树脂膜和有机树脂膜上的第二氮化硅膜。 有机树脂膜具有第一和第二氮化硅膜彼此接触的开口。 在第一氮化硅膜的下方设置半导体膜，在第二氮化硅膜上设置与半导体膜电连接的电极。
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公开(公告)号：US10854642B2
公开(公告)日：2020-12-01
申请号：US16058479
申请日：2018-08-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L27/12 , H01L29/786 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L23/498 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1368
Abstract: A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US10700106B2
公开(公告)日：2020-06-30
申请号：US16445475
申请日：2019-06-19
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Satoshi Murakami , Masahiko Hayakawa , Shunpei Yamazaki
IPC: H01L27/12 , H01L29/786 , H01L23/31 , H01L29/417 , H01L29/423 , G02F1/1362 , H01L27/32 , H01L29/66 , H01L23/498 , G02F1/1335 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/1343 , G02F1/1368
Abstract: A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US10527903B2
公开(公告)日：2020-01-07
申请号：US16192844
申请日：2018-11-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Toru Takayama , Satoshi Murakami , Hajime Kimura
IPC: H01L27/32 , G02F1/1368 , H01L51/52 , H05B33/04 , G02F1/1333 , G02F1/1362
Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
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