SEMICONDUCTOR DISPLAY DEVICE
    11.
    发明申请
    SEMICONDUCTOR DISPLAY DEVICE 有权
    半导体显示设备

    公开(公告)号:US20130134416A1

    公开(公告)日:2013-05-30

    申请号:US13686366

    申请日:2012-11-27

    Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

    Abstract translation: 在静止图像显示在具有像素的像素部分的情况下,例如通过停止对驱动电路的电源电压的供给来停止将具有图像数据的图像信号写入到像素部分的驱动电路, 并且停止向像素部分写入图像信号。 在驱动器电路停止之后,停止向用于控制驱动器电路的操作的面板控制器的电源电压供给和用于存储图像数据的图像存储器,并且向CPU提供电源电压以集中地控制 停止面板控制器,图像存储器和用于控制对半导体显示装置中的各种电路的电源电压供给的电源控制器。

    Semiconductor device comprising operation circuits and a switch circuit

    公开(公告)号:US12190079B2

    公开(公告)日:2025-01-07

    申请号:US17716239

    申请日:2022-04-08

    Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a plurality of operation circuits that can switch different kinds of operation processing; a plurality of switch circuits that can switch a connection state between the operation circuits; and a controller. The operation circuit includes a first memory that stores data corresponding to a weight parameter used in the plurality of kinds of operation processing. The operation circuit executes a product-sum operation by switching weight data in accordance with a context. The switch circuit includes a second memory that stores data for switching a plurality of connection states in response to switching of a second context signal. The controller generates a second context signal on the basis of a first context signal. The amount of data stored in the second memory can be smaller than the amount of data stored in the first memory in the operation circuit.

    Imaging device and electronic device

    公开(公告)号:US12120446B2

    公开(公告)日:2024-10-15

    申请号:US18008302

    申请日:2021-07-12

    CPC classification number: H04N25/77

    Abstract: An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel unit, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel unit and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, whereby power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are stacked, so that the lengths of wirings between the circuits can be reduced, and high-speed operation with low power consumption can be performed.

    Semiconductor device and display device including the same

    公开(公告)号:US12002886B2

    公开(公告)日:2024-06-04

    申请号:US17565618

    申请日:2021-12-30

    Inventor: Seiichi Yoneda

    CPC classification number: H01L29/786 H01L27/1225

    Abstract: A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.

    Inspection device and method for operating inspection device

    公开(公告)号:US11900642B2

    公开(公告)日:2024-02-13

    申请号:US17282598

    申请日:2019-10-01

    Abstract: An inspection device having a plurality of functions is achieved. The performance of an inspection device is improved. A structure of an inspection device is simplified. A structure of an imaging device is simplified. The inspection device includes a light source having a function of emitting infrared light, a light source having a function of emitting visible light, and an imaging portion which are provided over a substrate having flexibility, and inspects a fruit or vegetable. A first image based on light including reflected light of the infrared light, and a second image and a third image based on tight including reflected light of the visible light are captured by the imaging portion. The inspection device has a function of detecting one or more of the sugar content, the acidity, and a physiological disorder of a fruit or vegetable on the basis of the first image. The inspection device has a function of detecting at least one of the color and a scratch of a surface of the fruit or vegetable on the basis of the second image. The inspection device has a function of determining the grade of the fruit or vegetable on the basis of the first image and the second image. The inspection device has a function of detecting the size of the fruit or vegetable and determining the class on the basis of the third image.

    Semiconductor device or memory device

    公开(公告)号:US11177262B2

    公开(公告)日:2021-11-16

    申请号:US16609907

    申请日:2018-05-11

    Inventor: Seiichi Yoneda

    Abstract: A novel semiconductor device is provided. Alternatively a memory device which can retain more multi-level data is provided. One of a source or a drain of a write transistor is electrically connected to a bit line, and the other of the source or the drain of the write transistor is electrically connected to a data retaining portion. Data written to the data retaining portion is provided to the data retaining portion through a write bit line and the write transistor. Rising of a threshold voltage which is caused in a write operation can be inhibited and more multi-level data can be retained(stored) through electrically connecting a back gate of the write transistor to the write bit line.

    Semiconductor device and electronic device

    公开(公告)号:US10204925B2

    公开(公告)日:2019-02-12

    申请号:US14868821

    申请日:2015-09-29

    Inventor: Seiichi Yoneda

    Abstract: To provide a novel semiconductor device or a semiconductor device capable of operating at high speed. The semiconductor device includes a plurality of circuits each having a function of storing data and a wiring EL. The plurality of circuits each include a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the capacitor. The first transistor includes an oxide semiconductor in a channel formation region. The wiring EL has a function of a back-gate of the first transistor. A potential for selecting the plurality of circuits is supplied to the wiring EL. Thus, data stored in the plurality of circuits is erased.

    Storage circuit and semiconductor device

    公开(公告)号:US10164612B2

    公开(公告)日:2018-12-25

    申请号:US15254373

    申请日:2016-09-01

    Abstract: The storage circuit includes first and second logic circuits, first and second transistors whose channel formation regions include an oxide semiconductor, and a capacitor. The first and second transistors are connected to each other in series, and the capacitor is connected to a connection node of the first and second transistors. The first transistor functions as a switch that controls connection between an output terminal of the first logic circuit and the capacitor. The second transistor functions as a switch that controls connection between the capacitor and an input terminal of the second logic circuit. Clock signals whose phases are inverted from each other are input to gates of the first and second transistors. Since the storage circuit has a small number of transistors and a small number of transistors controlled by the clock signals, the storage circuit is a low-power circuit.

    Semiconductor device
    20.
    发明授权

    公开(公告)号:US10095584B2

    公开(公告)日:2018-10-09

    申请号:US14259534

    申请日:2014-04-23

    Inventor: Seiichi Yoneda

    Abstract: The amount of data to be backed up and recovered is reduced when supply of power to a semiconductor device is stopped and restarted. A backup need determination circuit provided in the semiconductor device reads the kind of instruction decoded by a decoder and determines whether data needs to be backed up from a volatile register to a nonvolatile register. With a structure according to one embodiment of the present invention, it is possible to select necessary data from data used for operation in a logic circuit before the power supply is stopped and after the power supply is restarted. Data that is necessary after the power supply is restarted can be backed up from the volatile register to the nonvolatile register before the power supply is stopped. Data that is unnecessary is not backed up from the volatile register to the nonvolatile register before the power supply is stopped.

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