公开(公告)号：US10801128B2

公开(公告)日：2020-10-13

申请号：US16196246

申请日：2018-11-20

Applicant: SHOWA DENKO K.K.

Inventor： Yasunori Motoyama ,  Yoshishige Okuno ,  Yoshikazu Umeta ,  Keisuke Fukada

IPC: C23C16/46 ,  C30B25/10 ,  C30B29/36 ,  C30B25/12

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.

公开(公告)号：US10262863B2

公开(公告)日：2019-04-16

申请号：US15534317

申请日：2015-12-08

Applicant: SHOWA DENKO K.K. ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Keisuke Fukada ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Masami Naito ,  Kazukuni Hara ,  Takahiro Kozawa ,  Hirofumi Aoki

IPC: H01L21/205 ,  C23C16/32 ,  C30B25/14 ,  C23C16/42 ,  C23C16/455 ,  C30B29/36 ,  C30B25/18 ,  C30B25/20 ,  H01L21/02

Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.